New thin-film solar cell materials and a greater understanding of their properties are needed to meet the urgent demand for sustainable, lower-cost and scalable photovoltaics. Computational techniques have been used to investigate Cu2ZnSnS4, CuSbS2 and CuBiS2 , which are potential absorber layer materials in thin-film photovoltaics. Their low cost, low toxicity and their constituent’s relative abundance make them suitable replacements for current thin-film absorbers, which are CdTe or Cu(In, Ga)(S, Se)2 based systems. Firstly, we have used hybrid Density Functional Theory (DFT) calculations to study CuSbS2 and CuBiS2. We calculate band gaps of 1.69 eV and 1.55 eV respectively, placing CuBiS2 within the optimal range for a viable absorber material. The density of states for both these materials indicate that formation of electron hole charge carriers will occur in the Cu d10 band. Consequently, photoexcitation leads to the oxidation of Cu(I). Secondly, we have derived interatomic potentials which describe the complex structure of Cu2ZnSnS4 accurately. We find that the Cu/Zn antisite defect represents the lowest energy form of intrinsic defect disorder. For these antisite defects, we find a preference for small neutral defect clusters, which suggests a degree of self-passivation exists. Investigations of Cu-ion transport find VCu migration is possible via a vacancy hopping mechanism. There are pathways which can be connected to give 3D long-range diffusion. Investigations of the Cu/Zn site disorder in Cu2ZnSnS4 find that configurations which are kesterite-like will dominate synthetic samples. However, perfectly ordered kesterite will not be formed due to entropic effects. The simulations indicate the stannite and stannite-like polymorphs are less favourable, and can only account for ≈2.5% of a sample. Investigations of the surfaces of Cu2ZnSnS4, suggest that the vast majority of the low index surfaces are dipolar and that only the (1 1 2), (0 1 0) and (1 0 1) surfaces have low surface energies.

Des facteurs fondamentaux pour la performance de matériaux à haute permittivité basés sur des pérovskites sont étudiés par des techniques ab-initio. L’anomalie diélectrique géante à 0K des pérovskites est investiguée aux niveaux Hartree-Fock, Théorie de la Fonctionnelle de la Densité et méthodes hybrides, en termes de la stabilité thermodynamique des phases, des contributions structurales et vibrationnelles et des charges effectives de Born. Le mode mou actif en infra-rouge est responsable par l’anomalie et des méthodes hybrides sont nécessaires pour reproduire les données expérimentales. L’évolution de l’instabilité ferroélectrique dans les pérovskites ABO3 avec la substitution de l’ion A est reliée de façon systématique aux rayons ioniques ainsi qu’aux degrés d’hybridation dans les liaisons pour des tantalates, niobates et titanates. / Ab-initio techniques are used to investigate key factors influencing the dielectric performance of high permittivity materials based on perovskites. The pressure-induced giant dielectric anomaly at 0K of ABO3 perovskites is investigated at the Hartree-Fock, density-functional theory and hybrid levels. Its mechanism is analyzed in terms of thermodynamic phase stability, structural and phonon contributions and Born effective charges. It is shown that the IR-active soft phonon is responsible for the anomaly and the use of hybrid functionals is required for agreement with experimental data. The evolution of the ferroelectric instability in ABO3 perovskites with substitution of the ion in the A site is systematically investigated for tantalates, niobates and titanates and correlated with the ionic radii as well as the degree of hybridization in the bonds.

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