This thesis describes the incorporation within a semiconductor laser of a multiple quantum well InGaAsP/InP Electron Bragg Reflector (EBR). The EBR is intended to improve laser performance by inhibiting the escape of hot electrons from the laser active region by quantum mechanical Bragg reflection. To the author's knowledge, this investigation represents the first attempt to realize an EBR in the InGaAsP/InP material system. Computer models based on a transfer matrix method for the solution of Schrodinger's equation were written to obtain the EBR design. The transfer matrix method is described. Extensions to the transfer matrix method for optics are presented and are demonstrated to provide more than an order of magnitude improvement in computational efficiency for the calculation of the complex TE-mode propagation constant for planar graded-index waveguides with absorption or gain. The EBR designed for this work incorporates several new features. Deleterious band bending in the vicinity of the EBR is minimized by exploiting material strain to reduce the density of hole states in the EBR quantum wells. To maximize reflection bandwidth and relax fabrication tolerances, the EBR design used well widths that decreased with increasing depth into the p-type InP cladding. By the placement of the EBR adjacent to the separate confinement region, a return path was provided for electrons that scattered inelastically within the EBR. Moreover, the EBR structure was designed to support no bound electron states, so that the recombination of electrons with holes in the EBR would be minimal. To the author's knowledge, the EBR-equipped laser fabricated for this work represents the first attempt to exploit electron state exclusion. To explore the effectiveness of EBRs in the InGaAsP/InP material system, two nearly identical ridge waveguide lasers (one with an EBR, and one without) were designed, fabricated, and tested. The EBR-equipped lasers exhibited an anomalous threshold current temperature dependence which featured a "negative-To" regime (in which the threshold current decreases with increasing temperature), attaining a minimum in threshold current between T=150 K and T=200 K. These lasers had a threshold current temperature stability superior to that of standard lasers within a ~70 K window around the minimum threshold temperature. Experimental evidence suggests that the improved stability is not due to quantum mechanical Bragg reflection provided by the EBR, but is attributable to the temperature-dependent rate of hole escape from the EBR quantum wells into the separate confinement region. The proposed mechanism is described in detail and is supported by theoretical and experimental evidence. The results have implications for device design, because the mechanism by which the superior temperature stability is achieved does not rely on the electron coherence effects; the mathematical model suggests that the mechanism can be exploited to provide superior temperature stability in semiconductor lasers at 300 K or above. / Thesis / Master of Engineering (ME)

This thesis reports on an extensive investigation into the intrinsic frequency response of various MQW lasers as determined from parasitic-free relative intensity noise (RIN) measurements. Eleven structures were designed, grown and fabricated at Nortel Technology's Advanced Technology Laboratory in Ottawa. Five of the laser structures had active regions containing 10 QWs. The barrier layer composition for these structures was varied such that the emission wavelength corresponding to the barrier band-gap increased from 1.0 pm to 1.2 pm in 0.05 pm steps. The remaining six structures had a constant barrier layer emission wavelength of 1.1 pm but the number of quantum wells was varied from 5, 7, 8 to 14 in 2 well steps. In all structures the QWs were embedded in a graded- index-separate-confinement-heterostructure waveguiding region and were strained to 1.0 percent in compression. The devices processed from these structures were Fabry-Perot type lasers having cavity lengths ranging from 254 pm to 1016 pm. Resonance frequency and damping values as a function of injection current and single facet optical power, as well as optical spectra just below threshold, were obtained for over one hundred devices. From this data the response coefficient D, K factor, group velocity (vg), photon energy (hv), mirror loss (am), and internal absorption (aint) were characterized. Using these characterized parameters dg/dN, dg/ds, and the maximum theoretical intrinsic 3 dB bandwidth (fmax) were calculated. The effects of varying QW number, barrier height, and cavity length on all these parameters was investigated. Limitations with using the single mode rate equation model for these characterizations is discussed. As well, potential limitations with the basic design of the structures studied in this thesis as revealed by the results are explored. / Thesis / Candidate in Philosophy