by Wong Kin Sang. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1998. / Includes bibliographical references (leaves 61-62). / Text in English; abstract also in Chinese. / by Wong Kin Sang. / Table of contents --- p.I / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Interest in ZnxCd1-x Se/InP --- p.1 / Chapter 1.2 --- Conditions of thermal annealing --- p.2 / Chapter 1.3 --- Advantages of using photoluminescence (PL) --- p.3 / Chapter 1.4 --- Our work --- p.4 / Chapter Chapter 2 --- Experimental setup and procedures / Chapter 2.1 --- PL measurements --- p.6 / Chapter 2.1.1 --- Setup --- p.6 / Chapter 2.1.2 --- Types of PL measurements --- p.6 / Chapter 2.2 --- Annealing experiments --- p.8 / Chapter 2.2.1 --- Setup --- p.8 / Chapter 2.2.2 --- Types of annealing --- p.10 / Chapter 2.2.3 --- Procedures --- p.11 / Chapter Chapter 3 --- Results and discussions / Chapter 3.1 --- Room temperature PL studies of ZnxCd1-xSe/InP --- p.12 / Chapter 3.1.1 --- As-grown ZnxCd1-x Se/InP --- p.12 / Chapter 3.1.1.1 --- Peak energy vs concentration --- p.12 / Chapter 3.1.2 --- Annealing studies --- p.15 / Chapter 3.1.2.1 --- Isothermal annealing --- p.15 / Chapter 3.1.2.2 --- Isochronal annealing --- p.20 / Chapter 3.2 --- PL studies of ZnxCd1-xSe/InP at 10 K temperature --- p.22 / Chapter 3.2.1 --- As-grown ZnxCd1-xSe/InP --- p.22 / Chapter 3.2.1.1 --- Excitation power density dependence --- p.22 / Chapter 3.2.1.2 --- Peak energy vs Zn concentration --- p.26 / Chapter 3.2.2 --- Annealing studies --- p.29 / Chapter 3.2.2.1 --- Isothermal annealing --- p.29 / Chapter 3.2.2.2 --- Isochronal annealing --- p.33 / Chapter 3.3 --- Temperature dependent PL studies of ZnxCd1-xSe/InP --- p.37 / Chapter 3.3.1 --- As-grown ZnxCd1-xSe/InP --- p.37 / Chapter 3.3.1.1 --- Peak energy vs temperature --- p.37 / Chapter 3.3.1.2 --- Peak width vs temperature --- p.46 / Chapter 3.3.2 --- Annealing studies --- p.50 / Chapter 3.3.1.1 --- Peak energy vs temperature --- p.50 / Chapter 3.3.1.2 --- Peak width vs temperature --- p.55 / Chapter Chapter 4 --- Conclusions --- p.59 / References --- p.61

"August 1999." / Thesis (Ph.D.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

by So King Lung, Benny. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves 102-109). / ABSTRACT --- p.v / ACKNOWLEDGEMENTS --- p.vii / LIST OF FIGURES --- p.viii / LIST OF TABLES --- p.xiii / Chapter Chapter 1 --- Background of the study --- p.1 / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.2 --- Surface passivation techniques --- p.3 / Chapter 1.2.1 --- Sulfide solution passivation --- p.3 / Chapter 1.2.2 --- Gas-phase sulfide passivation --- p.4 / Chapter 1.3 --- Surface structure of sulfide-passivated surface --- p.5 / Chapter 1.4 --- Objectives of the present study --- p.7 / Chapter Chapter 2 --- Instrumentation --- p.9 / Chapter 2.1 --- Introduction --- p.9 / Chapter 2.2 --- X-ray photoelectron spectroscopy (XPS) --- p.9 / Chapter 2.2.1 --- The development of XPS --- p.9 / Chapter 2.2.2 --- Basic principle of XPS --- p.9 / Chapter 2.2.3 --- Quantitative analysis of XPS --- p.14 / Chapter 2.2.3.1 --- Atomic concentration of a homogenous material --- p.14 / Chapter 2.2.3.2 --- Layer structure --- p.15 / Chapter 2.2.3.3 --- Simulation of XPS atomic concentration ratios from proposed surface structural models --- p.17 / Chapter 2.2.4 --- XPS experiment --- p.19 / Chapter 2.3 --- Low energy electron diffraction (LEED) --- p.21 / Chapter 2.3.1 --- The development of LEED --- p.21 / Chapter 2.3.2 --- Basic principle of LEED --- p.23 / Chapter 2.3.3 --- LEED experiment --- p.28 / Chapter 2.3.3.1 --- The ultra high vacuum chamber (UHV) --- p.28 / Chapter 2.3.3.2 --- The electron gun --- p.28 / Chapter 2.3.3.3 --- The sample --- p.30 / Chapter 2.3.3.4 --- The detector system --- p.30 / Chapter Chapter 3 --- Surface treatments --- p.31 / Chapter 3.1 --- Semiconductor wafers --- p.31 / Chapter 3.2 --- Cleaning procedure --- p.31 / Chapter 3.3 --- Polysulfide passivation --- p.33 / Chapter Chapter 4 --- Gas-phase polysulfide passivation of the InP(100) surface --- p.37 / Chapter 4.1 --- Introduction --- p.37 / Chapter 4.2 --- Sulfide-assisted reordering at the InP(100) surface --- p.38 / Chapter 4.2.1 --- Gas-phase polysulfide-treated InP( 100) surface --- p.38 / Chapter 4.2.2 --- Further annealing of the gas-phase polysulfide-treated surface --- p.47 / Chapter 4.2.3 --- Comparison with the UV/O3-HF treatment --- p.48 / Chapter 4.2.4 --- Sulfide at the interface of SiNx/InP --- p.49 / Chapter 4.3 --- Conclusions --- p.53 / Chapter Chapter 5 --- Gas-phase polysulfide passivation of the GaAs(lOO) surface --- p.55 / Chapter 5.1 --- Introduction --- p.55 / Chapter 5.2 --- Gas-phase poly sulfide-passivated GaAs( 100) surface --- p.56 / Chapter 5.2.1 --- Surface structure of the as-treated surface --- p.56 / Chapter 5.2.2 --- Surface structure after further annealing --- p.64 / Chapter 5.2.3 --- Mechanism of the gas-phase polysulfide passivation --- p.67 / Chapter 5.3 --- Conclusions --- p.68 / Chapter Chapter 6 --- Gas-phase polysulfide passivation of the GaAs(100) surface --- p.69 / Chapter 6.1 --- Introduction --- p.69 / Chapter 6.2 --- Reordering at the gas-phase polysulfide-passivated GaAs(100) surface --- p.70 / Chapter 6.2.1 --- Adsorption of polysulfide on the GaAs(100) surface --- p.70 / Chapter 6.2.2 --- Ordered sulfide at the GaAs(l 10) surface --- p.73 / Chapter 6.2.3 --- Further analysis of the LEED pattern --- p.80 / Chapter 6.3 --- Conclusions --- p.83 / Chapter Chapter 7 --- Sulfide Solution passivation of the GaAs(100) surface --- p.84 / Chapter 7.1 --- Introduction --- p.84 / Chapter 7.2 --- Sulfide solution passivation on the GaAs(l 10) surface --- p.85 / Chapter 7.2.1 --- Etching of sulfide solution on the GaAs(l 10) surface --- p.85 / Chapter 7.2.2 --- Annealing of sulfide solution-passivated GaAs( 110) surface --- p.88 / Chapter 7.2.3 --- Further analysis of the LEED pattern --- p.92 / Chapter 7.2.4 --- Shift of XPS peak position during annealing --- p.95 / Chapter 7.3 --- Conclusions --- p.97 / Chapter Chapter 8 --- Conclusions and further work --- p.99 / Chapter 8.1 --- Conclusions --- p.99 / Chapter 8.2 --- Further work --- p.100 / References --- p.102

Doctor of Philosophy / Department of Chemistry / Emily McLaurin / Quantum dots are nanocrystalline semiconductors in which the size is so small that optoelectronic properties are size dependent. QDs have a lot of applications in displays, solar cells, lasers, light emitting diodes, etc. The optoelectronic properties of QDs depend on their size, composition, the shape of the particles and also the surface chemistry of the QDs. Phosphine based precursors have been mostly used in the synthesis of QDs. Due to the lack of tunable reactivity, this class of precursors, QDs with different shape are obtained by under different reaction conditions. With that, branched QDs are less likely to be obtained in one step reaction using phosphine based precursors. To synthesis QDs with a branched structure, in a single step synthesis, mixtures of precursors with different reactivity were used. Using dichalcogenides mixture, CdSe₁-xSx hyperbranched supra-quantum dots (HSQDs) where synthesized in a one-step microwave-assisted synthesis and shape evolution mechanism of formation of NCs studied. It is shown that the NCs formed in three steps of nucleation, aggregation, and growth. By controlling the reaction conditions, simple branched tetrapod NCs are prepared, but the obtained NCs have no emission due to unpassivated surface and defects which work as trap. To obtain luminescent NCs obtained through doping. Hyperbranched Mn²+:ZnSe₁-xSx NCs also prepared using a mixture of Ph₂Se₂ and Me₂S₂. The shape evolution mechanism of the formation of NCs was studied and it is shown that the NCs are formed via oriented attachment of initially formed nanoparticles. The NCs used for thiol sensing, and it observed that they have a better sensitivity and detection limit than spherical QDs. Although hyperbranched NCs have higher sensitivities over nonbranched NCs but, the spherical NCs have better detection limit and can dispersed in aqueous medium by ZnS shell growth followed by silica shell formation. To study the effect of ZnS shell thickness on sensing property of NCs, a set of spherical Mn:ZnSe@ZnS with different ZnS shell thickness were prepared and used for thiol sensing. It observed that in organic medium, thinner ZnS layer gives the highest sensitivity and QDs with thick ZnS shell layer have less sensitivity. For measurement in aqueous medium, QDs transferred to PBS buffer after formation of silica shell over QDs. It observed that NCs with a thin ZnS shell layer lose their emission and sensing completely. Thick ZnS shell protects NCs in the silica shell formation step but they show very low sensitivity to thiol compounds as well. ZnS shell with medium thickness gives the best sensitivity in an aqueous medium. The emission of Mn:ZnSe@ZnS QDs originated from d-d electron transition of Mn(II) ions and is independent to the size of QDs. To extend our study to QDs with band edge emission, preparation of luminescent InP QDs by post-synthetic modification is studied. InP NCs were synthesized using heat up method and successive injection of precursors. Narrow size distribution NCs obtained after size selection precipitation. Emissive NCs obtained after etching using InCl3 and fluoride containing salts. The study showed that more InCl3 case more etching and presence of fluoride-containing salt is necessary for band edge emission of the NCs.

No description available.

Thesis (Ph.D.) -- McMaster University, 1997. / Includes bibliographical references. Also available via World Wide Web.

Thesis (Ph.D.) -- McMaster University, 1998. / Includes bibliographical references. Also available via World Wide Web.

Thesis (Ph.D.) -- McMaster University, 1998. / Includes bibliographical references (leaves 185-191). Also available via World Wide Web.

Thesis (Ph.D.)--McMaster University (Canada), 1995. / Source: Dissertation Abstracts International, Volume: 57-03, Section: B, page: 1870. Adviser: D. A. Thompson.

Thesis (Ph.D.)--McMaster University (Canada), 1996. / Source: Dissertation Abstracts International, Volume: 57-10, Section: B, page: 6325. Adviser: D. A. Thompson.