Materials exposed to the space plasma environment acquire electric charge, which can have harmful effects if it leads to arcing or electrostatic breakdown of important spacecraft components. In fact, spacecraft charging is the leading environmentally induced cause of spacecraft anomalies. This study focuses on measuring electron yield, a property of materials that describes how many electrons are ejected from a material under energetic electron bombardment, which can vary depending on the energy of incident electrons. Intrinsic electron yield is defined as the average number of electrons emitted per incident electron from an electrically neutral material. The specific aim of this work is to improve yield measurements for insulator materials, which can be difficult to test using conventional methods due to charge accumulation in insulators.Most studies of electron yield use a steady current electron beam in a vacuum chamber to irradiate materials to be tested. By comparing the amount of current deposited in the material to the total incident current, the emitted current can be calculated. This works well for conductors; however, insulators charge up quickly, which either repel incident electrons or reattract emitted electrons producing erroneous yield measurements. This study improves on methods that use a pulsed electron beam to measure yield with small amounts of charge per pulse, as well as neutralization methods to dissipate stored charge between pulse measurements.The improvements to instrumentation and data analysis techniques are quantified to demonstrate their validity. These improvements will allow for continued studies on extreme insulator materials. Future studies will provide new understanding of interactions between electron radiation and materials, which will allow for better modeling of spacecraft charging and the development of materials that meet desired electron emission specifications.

Master of Science

An experimental investigation was carried out to determine the feasibility of using thermal conductivity measurements to detect moisture concentrations in a highly porous glass fiber insulation. A new technique employing thermistor probes was used to measure thermal conductivity over a range of low moisture contents. The results indicate that the material's thermal conductivity is a strong nonlinear function of the moisture concentration. The sensitivity of the moisture content to thermal conductivity is greatest for moisture contents less than 25 per cent for the material tested. A numerical procedure for predicting the temperature and moisture distributions in a highly porous material is detailed. / Ph. D.

Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. In particular, if theconfinement (burying) layer is implemented by epitaxialregrowth of an appropriate aluminium-free semi-insulating (SI)material, passivation of etched surfaces, reduced tendency tooxidation, low capacitance and integration feasibility areadditional advantages. The major impediment in the fabrication of GaAs/AlGaAsburied-heterostructure lasers is the spontaneous oxidation ofaluminium on the etched walls of the structure. Al-oxide actsas a mask and makes the regrowth process extremely challenging.In this work, a HCl gas-basedin-situcleaning technique is employed successfully toremove Al-oxide prior to regrowth of SI-GaInP:Fe and SI-GaAs:Fearound Al-containing laser mesas by Hydride Vapour PhaseEpitaxy. Excellent regrowth interfaces, without voids, areobtained, even around AlAs layers. Consequences of usinginadequate cleaning treatments are also presented. Regrowthmorphology aspects are discussed in terms of different growthmechanisms. Time-resolved photoluminescence characterisation indicates auniform Fe trap distribution throughout the regrown GaInP:Fe.Scanning capacitance microscopy measurements demonstrate thesemi-insulating nature of the regrown GaInP:Fe layer. Thepresence of EL2 defects in regrown GaAs:Fe makes more difficultthe interpretation of the characterisation results in the nearvicinity of the laser mesa. GaAs/AlGaAs buried-heterostructure lasers, both in-planelasers and vertical-cavity surface-emitting lasers, withGaInP:Fe as burying layer are demonstrated for the first time.The lasers exhibit good performance demonstrating thatSI-GaInP:Fe is an appropriate material to be used for thispurpose and the suitability of our cleaning and regrowth methodfor the fabrication of this type of semiconductor lasers.Device characterisation indicates negligible leakage currentalong the etched mesa sidewalls confirming a smooth regrowthinterface. Nevertheless, experimental and simulation resultsreveal that a significant part of the injected current is lostas leakage through the burying material. This is attributed todouble carrier injection into the SI-GaInP:Fe layer.Simulations also predict that the function of GaInP:Fe ascurrent blocking layer should be markedly improved in the caseof GaAs-based longer wavelength lasers. <b>Keywords:</b>semiconductor lasers, in-plane lasers, VCSELs,GaAs, GaInP, semi-insulating materials, hydride vapour phaseepitaxy, regrowth, buried heterostructure, leakage current,simulation.

<p>Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. In particular, if theconfinement (burying) layer is implemented by epitaxialregrowth of an appropriate aluminium-free semi-insulating (SI)material, passivation of etched surfaces, reduced tendency tooxidation, low capacitance and integration feasibility areadditional advantages.</p><p>The major impediment in the fabrication of GaAs/AlGaAsburied-heterostructure lasers is the spontaneous oxidation ofaluminium on the etched walls of the structure. Al-oxide actsas a mask and makes the regrowth process extremely challenging.In this work, a HCl gas-based<i>in-situ</i>cleaning technique is employed successfully toremove Al-oxide prior to regrowth of SI-GaInP:Fe and SI-GaAs:Fearound Al-containing laser mesas by Hydride Vapour PhaseEpitaxy. Excellent regrowth interfaces, without voids, areobtained, even around AlAs layers. Consequences of usinginadequate cleaning treatments are also presented. Regrowthmorphology aspects are discussed in terms of different growthmechanisms.</p><p>Time-resolved photoluminescence characterisation indicates auniform Fe trap distribution throughout the regrown GaInP:Fe.Scanning capacitance microscopy measurements demonstrate thesemi-insulating nature of the regrown GaInP:Fe layer. Thepresence of EL2 defects in regrown GaAs:Fe makes more difficultthe interpretation of the characterisation results in the nearvicinity of the laser mesa.</p><p>GaAs/AlGaAs buried-heterostructure lasers, both in-planelasers and vertical-cavity surface-emitting lasers, withGaInP:Fe as burying layer are demonstrated for the first time.The lasers exhibit good performance demonstrating thatSI-GaInP:Fe is an appropriate material to be used for thispurpose and the suitability of our cleaning and regrowth methodfor the fabrication of this type of semiconductor lasers.Device characterisation indicates negligible leakage currentalong the etched mesa sidewalls confirming a smooth regrowthinterface. Nevertheless, experimental and simulation resultsreveal that a significant part of the injected current is lostas leakage through the burying material. This is attributed todouble carrier injection into the SI-GaInP:Fe layer.Simulations also predict that the function of GaInP:Fe ascurrent blocking layer should be markedly improved in the caseof GaAs-based longer wavelength lasers.</p><p><b>Keywords:</b>semiconductor lasers, in-plane lasers, VCSELs,GaAs, GaInP, semi-insulating materials, hydride vapour phaseepitaxy, regrowth, buried heterostructure, leakage current,simulation.</p>

In these days of economic crisis subsiding, in the civil engineering the attention is pointed especially to the systems, which effectively reduce energy and decrease costs associated with using of residential or industrial premises. Especially the heat-insulating systems are mentioned, because of their characteristics and construction which will be applied economical solutions. It is possible to use the materials based on aerated concrete which excel within construction materials due to its heat-insulating properties. The use of this material for clearly heat-insulations seems to be fully-fledged alternative to standard heat-insulating systems also due to combination of nature character and sufficient strength. This work deals with possibility of preparation non-bearing, heat-insulating material based on autoclaved aerated concrete with volume weight under 200 kg/m3.

Dielektrické materiály jsou použivány v elektronice i v elektrotechnice. Jako jejich základní vlastnost může považovat změnu jejich charakteristik během jejich životnosti. Změny jsou způsobeny namáhaním materiálu vyvolané elektrickými či teplotími vlivy. Možnost jak určit průběh jejich charakteristik v závislosti na čase je měření proudu během aplikování elektrického napětí na materiál. Tyto experimenty vědci z LEMD provaděli ručně, tento postup ale není přílíš učinný pro vysokofrekvenční signály nebo pro experimenty s dlouhou periodou. Hlavním cílem této práce bylo vytvořit aplikaci v LabVIEW k ovládaní měřícího přístroje Keithley (generátor napětí) a k automatickému získavání měřených hodnot v pikoampérech. Tato aplikace nabízí uživateli různé funkce: - Zadání vystupního napětí. - Vyběr typu průběhu. - Definování délky periody. - Ovládaní přístroje. - Měření proudu, ukládaní dat do souboru vhodného pro jiné aplikace (textový soubor). - Analýzu naměřených dat.

Apresentamos alguns métodos numéricos para a resolução das equações hiperbólicas que regem problemas de transporte de cargas elétricas em isolantes, aplicando-os a quatro problemas específicos: injeção de corrente por um contato ôhmico em uma amostra com voltagem constante aplicada; transporte de um pulso de cargas através de uma amostra em circuito aberto; transporte de um pulso de cargas através de uma amostra submetida a uma diferença de potencial constante (tempo de vôo); e, finalmente, descarga termo-estimulada em circuito aberto. Empregamos, basicamente, dois tipos de métodos: características e diferenças finitas. Concluímos que, quando as descontinuidades são importantes, é mais conveniente usar o método das características; porém, quando não houver descontinuidades ou se estas não forem importantes, alguns métodos de diferenças finitas podem ser utilizados com boa precisão e menores tempos de computação do que aqueles gastos pelos métodos das características. / Numeral methods for solving partial differential equations of the hiperbolic type, governing some problems of transport of electric charge in dielectrics are presented and then applied to four specific problems: injection of charge via an ohmic contact into a sample with a constant applied voltage; transport of a pulse of charge through a sample in the open circuit mode; transport of a pulse of charge through a sample subjected to a constant voltage; and finally, thermally stimulated discharge in open circuit. Essentially two kinds of methods are employed: the method of characteristics and finite-difference methods. It is concluded that when discontinuities are important, the method of characteristics is the most convenient; otherwise, appropriate finite-difference schemes can be used with sufficient precision and less time expenses in computers.

Apresentamos alguns métodos numéricos para a resolução das equações hiperbólicas que regem problemas de transporte de cargas elétricas em isolantes, aplicando-os a quatro problemas específicos: injeção de corrente por um contato ôhmico em uma amostra com voltagem constante aplicada; transporte de um pulso de cargas através de uma amostra em circuito aberto; transporte de um pulso de cargas através de uma amostra submetida a uma diferença de potencial constante (tempo de vôo); e, finalmente, descarga termo-estimulada em circuito aberto. Empregamos, basicamente, dois tipos de métodos: características e diferenças finitas. Concluímos que, quando as descontinuidades são importantes, é mais conveniente usar o método das características; porém, quando não houver descontinuidades ou se estas não forem importantes, alguns métodos de diferenças finitas podem ser utilizados com boa precisão e menores tempos de computação do que aqueles gastos pelos métodos das características. / Numeral methods for solving partial differential equations of the hiperbolic type, governing some problems of transport of electric charge in dielectrics are presented and then applied to four specific problems: injection of charge via an ohmic contact into a sample with a constant applied voltage; transport of a pulse of charge through a sample in the open circuit mode; transport of a pulse of charge through a sample subjected to a constant voltage; and finally, thermally stimulated discharge in open circuit. Essentially two kinds of methods are employed: the method of characteristics and finite-difference methods. It is concluded that when discontinuities are important, the method of characteristics is the most convenient; otherwise, appropriate finite-difference schemes can be used with sufficient precision and less time expenses in computers.

This graduation theses in introduction deals with principle and problems of electron signal detection in scanning electron microscopy and charging of insulating specimens in SEM. The experimental part of the thesis describe the methods of qualification and quantification of insulating specimen charging effect observed in environmental scanning electron microscope through the use of ionisation and scintillation detector in dependence on water vapour pressure in specimen chamber. The goal of the thesis is formation of the methodics useful to evaluate charging effect at insulating specimens observing and on the basis of measuring, determine optimal conditions for insulating specimen observation with ionisation and scintillation detector.