This study is focus on the integration and miniaturess of the active circuit and antennas. Recently, the monolithic microwave integrated circuits have been mature in communication markets and the associated handsets are interesting in the quality and profile. The antenna plays a role as a radiator in wireless system. Therefore, the performance dominates the quality of communication. The aspect of the antenna usually occupies the majority communication hardware¡¦s area. Comparing many front end circuit elements, the challenges in the antennas will be more crucial. Therefore, it has well merits in designing high integration and bandwidth antennas. Based on the integration of the active circuits stage and antennas, this work presents the aperture coupled active antenna with harmonic suppression and broadband dual feeds circularly polarized patch antenna. Utilizing the bented aperture and insertion of narrow rectangular slots on excitation edge for shifting the high order harmonic components from the active stage, the harmonic suppression characterization is implemented by the above approach. The other active antenna, braodband dual feeds circularly polarized antenna, is achieved with spatial power combining. The subject aims the different excitated patch structures and replacing the periodic feeding lines as active circuits in the discussion. Relative to the conventional 50 Ohm feeds, the mechanics of the feeds are modified with stepped impedance resonators and stubs at the same physical wave length condition for achieving the integration of the antenna and the circuit. Besides, this antenna can exhibit excellent behavior and compact the size in the effective frequency range.

Active integrated antennas (AIAs) are divided into oscillator type AIAs, amplifier type AIAs and frequency-conversion type AIAs. The AIAs designed in this master thesis are oscillator type. Instead of using lumped component like inductors and capacitors, I use a half-wavelength antenna as resonator. In this design, antenna is also treat as a radiated loading. According to reciprocity, antenna receives the reflection signal affected by human body movement and vital sign at the same time. This behavior is regarded as a self-injection locking oscillator. In this master thesis, active antenna is used in monitoring and contacting measurement. In monitoring measurement, active antenna and subject keep their distance. Subject random body movement affects the measured result. Contacting measurement means active antenna pastes on the subject, thus there is no relative displacement between active antenna and subject. Random body movement affect iscancelled in theory. In contacting measurement design some different body motions to test the tolerance of this measurement structure, and use correlation to cancel random body movement. The sensitivity of active antenna structure is enough to detect the vocal vibration in contacting measurement.

Esta tese de doutorado trata do desenvolvimento de circuitos para a deteção de ondas submilimétricas integrados em tecnologia CMOS. Existe um interesse crescente nas tecnologias que utilizam frequências em terahertz (300 GHz - 3 THz) para aplicações em diagnóstico médico por imagem, análise espectral, segurança, radiocomunicação, aplicações médicas e de inspeção. Os sistemas atuais que utilizam tecnologias fotônicas são complexos e consomem muito espaço, além de pouco acessíveis devido ao seu alto custo. Porém, com o advento das tecnologias de silício (eg. CMOS e BiCMOS) é possível desenvolver circuitos nesta faixa de frequência, com baixo custo e alta capacidade de integração, permitindo inclusive o processamento do sinal no próprio chip. Diante deste contexto, as investigações desta tese de doutorado pretendem analisar e contribuir com o desenvolvimento de circuitos de detecção de ondas sub-milimétricas, bem como, propor uma metodologia de projeto que permita a integração destes circuitos e suas antenas em tecnologia CMOS, e com especificações para aplicação em um sistema de identificação por imagem. Este sistema é composto por antena, interface para detecção e processamento do sinal. Alguns detectores com antenas patch acopladas e com variações topológicas foram fabricados em tecnologia CMOS de 180 nanometros e testados para diferentes faixas de frequências, que vão desde 400 GHz até 800 GHz. Também foi desenvolvido um arranjo de detectores com 12 pixels (4x3) para a faixa de 700 GHz a 770 GHz, para aplicação em sistemas de identificação por imagem. A análise, o projeto e os testes destes circuitos, bem como a sua aplicação e a comparação dos mesmos com os apresentados em outros trabalhos, são discutidos ao longo desta tese. Os circuitos foram testados com um setup proposto adaptando-se um sistema de espectroscopia no domínio do tempo, comprovando os resultados através de testes experimentais. / This PhD thesis deal with the development of circuits for submillimeter waves detection integrated in CMOS technology. There is a growing interest in technologies that uses terahertz frequencies (300 GHz to 3 THz) for applications in medical imaging, spectral analysis, security, radiocommunication, medical applications and inspection. The present systems that uses photonic technology are complex and space consuming, and also are very expensives. However, with the advent of silicon technologies (eg. CMOS and BiCMOS) is possible to develop circuits to work in this frequency range, with low cost and high integrability, including the on-chip signal processing. Given this context the investigations of this PhD thesis intends to analyze and to contribute with the development of submillimeter waves detection circuits as well as to propose a design metodology that allows the circuit integration and its antennas in CMOS technology and with specifications for application in imaging system. This system is composed by antenna, detection interface and signal processing. Some detectors with coupled patch antenna and with topological variations were fabricated in 180 nanometers CMOS technology and tested for different frequency ranges, that ranging from 400 GHz until 800 GHz. Also was developed a detector array with 12 pixels (4x3) for the 700 to 770 GHz frequency range (120 GHz bandwidth), for application in imaging systems. The analysis, design and testing of these circuits as well as their application and their comparison with those presented in other works, are discussed throughout this thesis. The circuits were tested using a proposed setup using a terahertz time-domain spectroscopy system confirming the results through experimental tests.

Esta tese de doutorado trata do desenvolvimento de circuitos para a deteção de ondas submilimétricas integrados em tecnologia CMOS. Existe um interesse crescente nas tecnologias que utilizam frequências em terahertz (300 GHz - 3 THz) para aplicações em diagnóstico médico por imagem, análise espectral, segurança, radiocomunicação, aplicações médicas e de inspeção. Os sistemas atuais que utilizam tecnologias fotônicas são complexos e consomem muito espaço, além de pouco acessíveis devido ao seu alto custo. Porém, com o advento das tecnologias de silício (eg. CMOS e BiCMOS) é possível desenvolver circuitos nesta faixa de frequência, com baixo custo e alta capacidade de integração, permitindo inclusive o processamento do sinal no próprio chip. Diante deste contexto, as investigações desta tese de doutorado pretendem analisar e contribuir com o desenvolvimento de circuitos de detecção de ondas sub-milimétricas, bem como, propor uma metodologia de projeto que permita a integração destes circuitos e suas antenas em tecnologia CMOS, e com especificações para aplicação em um sistema de identificação por imagem. Este sistema é composto por antena, interface para detecção e processamento do sinal. Alguns detectores com antenas patch acopladas e com variações topológicas foram fabricados em tecnologia CMOS de 180 nanometros e testados para diferentes faixas de frequências, que vão desde 400 GHz até 800 GHz. Também foi desenvolvido um arranjo de detectores com 12 pixels (4x3) para a faixa de 700 GHz a 770 GHz, para aplicação em sistemas de identificação por imagem. A análise, o projeto e os testes destes circuitos, bem como a sua aplicação e a comparação dos mesmos com os apresentados em outros trabalhos, são discutidos ao longo desta tese. Os circuitos foram testados com um setup proposto adaptando-se um sistema de espectroscopia no domínio do tempo, comprovando os resultados através de testes experimentais. / This PhD thesis deal with the development of circuits for submillimeter waves detection integrated in CMOS technology. There is a growing interest in technologies that uses terahertz frequencies (300 GHz to 3 THz) for applications in medical imaging, spectral analysis, security, radiocommunication, medical applications and inspection. The present systems that uses photonic technology are complex and space consuming, and also are very expensives. However, with the advent of silicon technologies (eg. CMOS and BiCMOS) is possible to develop circuits to work in this frequency range, with low cost and high integrability, including the on-chip signal processing. Given this context the investigations of this PhD thesis intends to analyze and to contribute with the development of submillimeter waves detection circuits as well as to propose a design metodology that allows the circuit integration and its antennas in CMOS technology and with specifications for application in imaging system. This system is composed by antenna, detection interface and signal processing. Some detectors with coupled patch antenna and with topological variations were fabricated in 180 nanometers CMOS technology and tested for different frequency ranges, that ranging from 400 GHz until 800 GHz. Also was developed a detector array with 12 pixels (4x3) for the 700 to 770 GHz frequency range (120 GHz bandwidth), for application in imaging systems. The analysis, design and testing of these circuits as well as their application and their comparison with those presented in other works, are discussed throughout this thesis. The circuits were tested using a proposed setup using a terahertz time-domain spectroscopy system confirming the results through experimental tests.

Four main aspects are studied and explored throughout this dissertation: (1) On-Package Multipolar antenna system design for integration with commercial wireless sensor nodes for machine-to-machine communication applications; (2) Development of a novel MMIC packaging process and subsequent antenna integration for chip-to-chip communication applications, (3) Design and characterization of additively manufactured lumped passive elements for integration with MMIC and hybrid circuits, (4) Design and characterization of antennas for on- and off-metal radio frequency identification (RFID) applications. This work presents the design of different 3-D printed tripolar antenna systems operating at 2.4 GHz. The antennas are designed for integration with commercial wireless nodes with the purpose of mitigating multipath and depolarization channel effects that might be present in many machine-to-machine (M2M) deployments. The antennas are fabricated utilizing an additive manufacturing (AM) approach that combines fused deposition modeling (FDM) of ABS plastic for dielectric parts and micro-dispensing of silver paste Du-Pont CB028 for conductive layers as the majority of the devices presented in this work. Over the air testing demonstrates a 1% channel improvement of up to 14 dB, achieved in a highly-reflective, Rayleigh-like fading environment by implementing selection diversity between three mutually orthogonal monopoles. This improvement leads to better bit error rate (BER) performance (as is also shown). Additionally, RSSI measurements show significant improvement when the prototype antenna system is integrated with commercial wireless sensor hardware. Implications of tripolar antenna integration on M2M systems include reduction in energy use, longer communication link distances, and/or greater link reliability. In order to incorporate the proposed multipolar selection diversity technique into short range wireless chip-to-chip communications, a novel and versatile 3D printed on-chip integration approach using laser machining is subsequently demonstrated for microwave and mm-wave systems in a process herein referred to as Laser Enhanced or Laser Assisted Direct Print Additive Manufacturing (LE-DPAM). The integration process extends interconnects laterally from a MMIC to a chip carrier. Picosecond laser machining is applied and characterized to enhance the 3D printing quality. Specifically, the width of micro-dispensed printed traces is accurately controlled within micrometer range (e.g. laser cuts ~12 μm wide), additionally, 150 μm probe pads are cut in order to facilitate RF measurement. The S-parameters of a distributed amplifier integrated into the package are simulated and measured from 2 to 30 GHz. It is seen how the overall performance is significantly better than a traditional wirebonded QFN package and previously reported AM MMIC interconnections. The attenuation of the microstrip line including interconnects is only 0.2 dB/mm at 20 GHz and return loss with the package is less than 10 dB throughout the operating frequency band A 17 GHz package integrated linearly polarized patch antenna, fabricated with a multi-layer and multi-material LE-DPAM process is then introduced for vertical interconnection with a MMIC die. Performance is successfully measured and characterized achieving a return loss greater than 19 dB at the desired design frequency. Good agreement between simulated and measured radiation patterns is also obtained with a peak gain of 4.2 dBi. Another section of this work utilizes LE-DPAM to fabricate lumped capacitors and inductors for coplanar waveguide (CPW) circuits, especially useful for filtering and matching network implementation. Laser machining is used to achieve ~12 µm slots on printed conductors, producing aspect ratios greater than 2:1, as well as to fabricate vertical interconnects or vias that allow for the fabrication of the multilayer inductors. Inductances in the range of 0.4-3 nH are achieved, with a maximum quality factor of 21, self-resonance frequencies up to 88 GHz, and an inductance per unit of area of 5.3 nH/mm2. Interdigital capacitors in the range of 0.05-0.5 pF are fabricated, having a maximum quality factor of 750 and self-resonances up to 120 GHz. All the components are made on the center line of a CPW that is 836 µm wide. The results show that LE-DPAM enables the fabrication of compact passive circuits that can be easily interconnected with MMIC dies, which at the same time, can be manufactured as part of a larger component. This enables the fabrication of structural electronics that are functional into the mm-wave frequency range. A final aspect of this work goes through antenna designs for specific RFID (radio frequency identification) applications. RFID tag design is generally focused specifically on either off-metal or on-metal configurations. In this work passive 2D and 3D RFID tags are presented which perform similarly in both configurations. The presented tags operate in the ISM RFID UHF bands that cover 864-868 MHz and 902-928 MHz. A matching loop consisting of two parallel stubs to ground is used for impedance matching to a passive integrated circuit, which has -18 dBm sensitivity. A planar 2D tag with a footprint of 13126.5 mm2 is first introduced, showing a simulated gain of approximately 3 dBi and a measured read range of 10 m (for 31 dBm transmit power from the reader) in both on-metal and off-metal conditions. The tag is miniaturized into a 3D geometry with a footprint of 2524.25 mm2 (520% reduction) and achieves the same broadside simulated on-metal gain. The antennas are fabricated using a DPAM process, and a meshed ground configuration is explored in order to accomplish a 50% conductive paste reduction without disrupting the performance. The proposed tags are compared with commercially available tags as well as previously published tags in terms of read range and size. The tags in this work present an improvement in terms of read range, gain, and area with respect to previous designs covering the ISM RFID UHF bands. Moreover, the performance of these tags is maintained in on- and off-metal conditions, achieving comparable performance and a reduction in volume of 11482% with respect to the best tag reported.

Cette thèse porte sur l'étude d'antennes intégrées sur silicium aux fréquences millimétriques, dans le but d'aboutir à des modules d'émission-réception totalement intégrés et reportés par des technologies standards dans un objet communicant. Ce travail comprend deux axes majeurs: Le première axe traite de l'étude, la conception et la réalisation d'antennes intégrées dans un boitier standard QFN couplées à un circuit émetteur-récepteur Ultra Large Bande (ULB) à 60 GHz comprenant des antennes intégrées de type dipôle replié fabriquées en technologie CMOS SOI 65-nm sur silicium haute résistivité. Dans un premier temps, nous avons défini le modèle de simulation à partir duquel nous avons étudié les performances des antennes prenant en compte l'influence de l'environnement (boitier, capot, fil d'interconnexions et technologie de fabrication). Dans un second temps, nous avons réalisé une optimisation des performances en adaptation et en rayonnement en ajoutant au sein du boitier un substrat et des éléments rayonnants couplés aux antennes intégrées sur la puce. Ce dispositif permet de réaliser des communications très haut débit (jusqu'à 2.2 Gbps) avec une très faible consommation d'énergie. Nous montrons qu'il est possible d'atteindre une distance de communication de plusieurs mètres grâce à un réseau transmetteur réalisé en technologie imprimée.Le deuxième axe porte sur la conception et la réalisation d'antennes multifaisceaux en bande V pour applications à long portée; il propose d'associer un réseau transmetteur réalisé sur technologie imprimée à un réseau focal constitué d'un petit nombre d'antennes intégrées sur silicium afin d'obtenir un compromis intéressant entre le niveau de gain, le coût et les capacités de dépointage de faisceau. Plusieurs réseaux sont démontrés avec un faisceau en polarisation circulaire, un gain de 18.6 dBi et une capacité de dépointage de ±24°. / This PhD thesis investigates the integration of antennas on silicon substrates at millimetre-wave frequencies in order to obtain fully-integrated and packaged transceiver modules using standard technologies in wireless devices. This work is organized in two main parts:In the first part, we investigated the design and realization of integrated antennas in a standard QFN package coupled to a 60 GHz Ultra-Wide-Band (UWB) transceiver chip with two integrated folded-dipole antennas implemented in a 65-nm CMOS-SOI technology on high-resistivity silicon. We defined a simulation model from which we studied the performance of integrated antennas, taking into account the influence of the environment (package, lid, wirebonding and manufacturing technology). Then, we optimized the antenna performances in impedance matching and radiation gain using radiating elements printed on a substrate and coupled to the on-chip folded dipoles. This antenna led to the demonstration of high-data rate communications (up to 2.2 Gbps) with a very low power consumption. We showed that the communication distance can be extended up to several meters using a transmit array printed on a low-loss substrate.In the second part, we investigated the design and realization of multibeam antennas in V-band for long-range applications; it is based on a transmit-array realized in standard printed technologies associated with a focal source array, which consists of a small number of integrated antennas on silicon in order to achieve a good compromise between the radiation gain, the cost and the beam steering capabilities. Several arrays were demonstrated with a circularly-polarized beam, a gain of 18.6 dBi et a beam-steering capability of ±24°.