The application of focused ion beam (FIB) technology in microfabrication has become increasingly popular. Its use in microfabrication has advantages over contemporary photolithography or other micromachining technologies, such as the ability to process without masks and being accommodating for a variety of materials and geometries. With the surface modification of the LED/air interface, like microlens array, the light emitting at large angle can be extracted because the incident angle at the interface will be less than the critical angle without total internal reflection. A microlens feature has been fabricated on GaN LED top surface (p-GaN layer) and back side (sapphire substrate) by scanning a focused Ga ion beam. The lens shape can be modulated by using computer-controlled beam direct writing and dwell time during milling process. We have used this technique even to create a sophisticated lens surface of Fresnel microlens array which can't be created with the conventional etching methods. In addition, the resistivity of p-GaN layer is highly sensitive to the process-induced damages during surface texturing, it is difficult to apply dry etching to p-GaN layer. Our method of using gas-assisted focused ion beam etching (GAFIBE) can enhance the etching rate by the assistance of chemical reaction with minimized ion dose density to provide nearly damage-free etching by varying the beam current, pixel dwell time and refresh time. Our study emphasis on direct milling and maskless techniques which can distinguish the FIB technology from the contemporary photolithography process and provide a vital alternative to it.

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Thesis (Ph. D.)--Oregon Graduate Center, 1988.

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On InGaAs/AlInAs heterostructures we made nanowires which were made by focus ion beam (FIB) and the width of nanowires making by FIB were 40nm¡B70nm¡B100nm and 200nm respectively. we studied electronic characterization of nanowires using Shubnikov-de Haas(SdH).In our research,by using SdH method there are no signal in our sample which processed by FIB,then we changed to process technology in our sample.For example: Increase thickness of the protection layer,size of change channel,etc.

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Focused ion beam (FIB) technique uses a focused beam of ions to scan the surface of aspecimen, analogous to the way scanning electron microscope (SEM) utilizes electrons. Recent developments in the FIB technology have led to beam spot size below 10 nm,which makes FIB suitable for nanofabrication. This project investigated thenanofabrication aspect of the FIB technique, with device applications perspective inseveral directions. Project work included construction of an in-situ FIB electricalmeasurement system and development of its applications, direct measurements ofnanometer scale FIB cuts and fabrication and testing of lateral field emission devices. Research work was performed using a number of materials including Al, Cr, SiO2, Si3N4and their heterostructures. Measurements performed included in-situ resistometricmeasurements, which provided milled depth information by monitoring the resistancechange of a metal track while ion milling it. The reproducibly of this method wasconfirmed by repeating experiments and accuracy was proven by atomic force microscopy(AFM). The system accurately monitored the thickness of 50 nm wide and 400 nm thick(high aspect ratio) Nb tracks while ion milling them. Direct measurements of low aspectratio nanometer scale FIB cuts were performed using AFM on single crystal Si,polycrystalline Nb and an amorphous material. These experiments demonstrated theimportance of materials aspects for example the presence of grains for cuts at this scale. Anew lateral field emission device (in the plane of the chip) was fabricated, as FIB offersseveral advantages for these devices such as control over sharpness and decrease in anodeto-cathode spacing. FIB fabrication achieved field emission tip sharpness below 50 nm andanode-to-cathode spacing below 100 nm. For determining the field emission characteristicsof the devices, a low current (picoampere) measurement system was constructed anddevices operated in ultra high vacuum (10-9 mbar) in picoampere range. One devicefabricated using a FIB sharpening process had a turn on voltage of 57 V.

The systematic study of the formation of β-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline β-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of β-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of β-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process in silica and the characterization of formed clusters is presented. Silicon dioxide layers ~500 nm thick are thermally grown on a Si (100) wafer. The SiO2 layers are then implanted with 70 keV carbon ions at a fluence of 5×1017 atoms/cm2. The implanted samples are annealed 1100 °C for different time periods of 10 min., 30 min., 60 min., 90 min., and 120 min., in the mixture of argon and hydrogen gas (96 % Ar + 4% hydrogen). Photoluminescence spectroscopy reveals UV to visible emission from the samples. A detail mechanism of the photoluminescence and its possible origin is discussed by correlating the structural and optical properties of the samples. Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, spectroscopy, photoluminescence spectroscopy, and transmission electron microscopy are used to characterize the samples.

Focused ion beam/scanning electron microscopy (FIB/SEM) is a tool commonly used for applications including preparation of site-specific transmission electron microscopy (TEM) samples, nanotomography, and electronic circuit edit. Another potential application is optical device prototyping; however, the ion beam itself has been shown to cause damage fatal to device operation. This thesis first includes several examples of FIB-fabricated optical devices that had limited functionality compared to simulation. Second, the underlying causes of ion beam-induced optical damage from gallium and xenon ion sources is characterized. Monte Carlo simulations of ion-solid interactions were confirmed using TEM analysis to measure the thickness of the damaged layer. For crystalline samples such as silicon, Raman response can be used as a measure of lattice damage. Using these techniques, it was found that optical damage from a gallium beam is more severe than from a xenon beam, and occurs in the form of lattice amorphization and implantation of beam ions. This damage hinders optical coupling by altering the physical and electronic structure of the sample. Consequently, the xenon PFIB is a better choice for optical device prototyping. / Thesis / Master of Science (MSc) / The second half of the 20th century saw the advent of nanotechnology, both in the context of understanding the structure of the natural world beyond the limit of light microscopy, as well as manipulating materials to create useful microscopic devices, including the computers ubiquitous in today’s life. One technology that has contributed to today’s nano-centric paradigm is the focused ion beam/scanning electron microscope (FIB/SEM). The FIB/SEM is used to machine materials with extreme precision for many diverse applications such as modifying microcircuits, three-dimensional (3D) nanotomography, or to prepare samples for other microscopy techniques. For some applications, however, damage to the sample from the ion beam can be fatal. New ion sources have become available in the past ten years that may cause less damage to samples, and thus open up new applications for FIB. This thesis includes first a description of a series of optical devices prototyped using FIB. This is followed by a comparison of the damage induced by the conventional liquid gallium ion source and new xenon plasma ion sources, and a discussion of the relative merits of the ion sources for optical device fabrication.