The glancing angle deposition (GLAD) technique is now used by over one hundred research groups, each requiring a fundamental understanding of and new techniques for modulating the properties of GLAD in order to optimize their results. In this thesis, the structural characteristics of nanostructured columnar films were therefore investigated and quantified using gas adsorption porosimetry, focused ion beam tomography, optical methods, scanning electron microscopy (SEM) image analysis. Questions such as ``What is their surface area?'', ``How porous are they?'', ``How do the films evolve as they grow?'', and ``Can the structural characteristics be manipulated?'' were answered. Surface areas, determined from krypton gas adsorption, were found to be high, making GLAD promising for applications requiring large and rough surface interfaces. Specifically, peak specific surface areas of 700 +/- 150 m^2g^{-1}, 325 +/- 40 m^2g^{-1}, 50 +/- 6 m^2g^{-1} were measured for silica (SiO_2), titania (TiO_2) and indium tin oxide (ITO), respectively. Broad pore distributions, with peaks in the low mesoporous regime of 2 nm to 5 nm, were also determined. The internal surface area may also be up to three times as high as that of the externally exposed surface. As well, despite the fact that GLAD column broaden as they grow, the surface area increases linearly with film thickness. Focused ion beam milling, with concurrent SEM imaging, was then employed to investigate and reconstruct the three-dimensional structure of GLAD films in the tens of nanometers regime not measurable by krypton gas adsorption porosimetry. The measured growth scaling trends agreed with previous findings, but were determined using only one sample, instead of multiple samples of increasing thickness. Mean column diameters, center-to-center spacings, void spacings, and column densities were found to scale with thickness as w = (9.4 +/- 3.0) t^{0.35 +/- 0.09} nm, c = (24.8 +/- 5.2) t^{0.31 +/- 0.08} nm, v = (15.2 +/- 3.8) t^{0.25 +/- 0.06} nm, and d = (3400 +/- 2500) t^{-0.65 +/- 0.15} columns um^{-2}, respectively. Finally, spatially graded nanostructures were demonstrated by extending the GLAD technique to include macroscopic shadowing. Optically transparent, graded thickness and pitch helical films were fabricated with polarization selectivity over a spatial range of 30 mm, concurrent with 70 nm spectral tunability. These structures will be useful for tunable frequency photonic devices. / Micro-Electrical-Mechanical Systems (MEMS) and Nanosystems

The fabrication characteristic of etching and deposition of focused ion beam (FIB) on the submicron structure of silica and quartz glass was investigated. FIB has several advantages such as high sensitivity, high material removal rate, and direct fabrication in some selected areas without the use of etching mask, etc. In this study, silicon and quartz glass materials etched by FIB were used for fast fabrication of 3-D submicron structures to investigate the differences between the samples before and after fabrication. The expansion effect of silicon with sputtered platinum on surface is compared with Pyrex glass with sputtered chromium on surface. The result shows the side wall of structure in the center wouldn¡¦t be vertical after etching and trimming on the quartz glass and the silicon substrate. Trenches with different depth and width on the surface of silicon were etched by FIB and measured by Atomic Force Microscope. Lines with different interval were deposited by FIB on the surface of quartz glass and were measured by Atomic Force Microscope.

External radiotherapy with proton and ion beams needs accurate tools for the dosimetric characterization of treatment fields. Monte Carlo (MC) particle transport codes, such as FLUKA and GEANT4, can be a valuable method to increase accuracy of dose calculations and to support various aspects of ion beam therapy (IBT), such as treatment planning and monitoring. One of the prerequisites for such applications is however that the MC codes are able to model reliably and accurately the relevant physics processes. As a first focus of this thesis work, physics models of MC codes with importance for IBT are developed and validated with experimental data. As a result suitable models and code configurations for applications in IBT are established. The accuracy of FLUKA and GEANT4 in describing nuclear fragmentation processes and the production of secondary charged nuclear fragments is investigated for carbon ion therapy. As a complementary approach to evaluate the capability of FLUKA to describe the characteristics of mixed radiation fields created by ion beams, simulated microdosimetric quantities are compared with experimental data. The correct description of microdosimetric quantities is also important when they are used to predict values of relative biological effectiveness (RBE). Furthermore, two models describing Compton scattering and the acollinearity of two-quanta positron annihilation at rest in media were developed, validated and integrated in FLUKA. The detailed description of these processes is important for an accurate simulation of positron emission tomography (PET) and prompt-γ imaging. Both techniques are candidates to be used in clinical routine to monitor dose administration during cancer treatments with IBT. The second objective of this thesis is to contribute to the development of a MC-based treatment planning tool for protons and ions with atomic number Z ≤ 8 using FLUKA. In contrast to previous clinical FLUKA-based MC implementations for IBT which only re-calculate a given treatment plan, the developed prototype features inverse optimization of absorbed dose and RBE-weighted dose for single fields and simultaneous multiple-field optimization for realistic treatment conditions. In a study using this newly-developed tool, the robustness of IBT treatment fields to uncertainties in the prediction of RBE values is investigated, while comparing different optimization strategies. / <p>At the time of the doctoral defense, the following papers were unpublished and had a status as follows: Paper 5: Submitted. Paper 6: Manuscript.</p>

Micro/Nano-Electro-Mechanical Systems (MEMS/NEMS) applications for in vivo cell studies open a wide range of new applications in medicine, biology, and biochemistry. This has lead to develop devices for local drug delivery, microneedles for DNA injection, and micronozzles for cell holding among others.The work presented in this manuscript is framed within two projects: MINAHE and MINAHE II. The main goal of MINAHE was the development of technologies suitable for fabrication of micro/nano tools. Tools fabricated under MINAHE has found application in gold surface patterning and sub-picoliter dosage driven by an Atomic Force Microscope. MINAHE II employed these micro/nano tools on cellular applications.Following the current integration trend in microelectronics, two different integrative technologies have been developed and will be discussed here. The first technology presented is based on Microsystems technology combined with Focused Ion Beam (FIB) nanomilling. The fabricated device has been fitted to an Atomic Force Microscopic (AFM) for gold surface patterning. Experience developed in the first generation of micro/nano dispensers promoted a number of upgrades to produce a new generation of dispensers with emphasis for application in the Life Sciences. Technological processes were developed from component definition to back-end fabrication. Microchannel were defined on- substrate with micronozzles at the tip. The whole ensemble had AFM chip dimensions. This design favoured the use of microchannels as micro/nanodispensors and could effectively be used as surface functionalization tools. Once the components were identified, fabrication processes took place at Instituto de Microelectrónica de Barcelona, INM-CNM (CSIC) Clean Room (100-10000) facilities. First generation of micro/nanodispensers has sucessfully formed Self Assambled Monolayers (SAM). Experience developed in the first generation micro/nanodispensers promoted a number of upgrades to produce a Second generation of dispensers with an emphasis for applications in the Life Sciences. Transparent new devices were defined with specific shapes for cell manipulation. Anisotropic etching was replaced by Dry Reactive Ion Etching (DRIE) for improved process control. Packaging was improved with anodic bonding between silicon and glass chips and individual chip yield was increased by manual cleaving instead of wafer dicing. Transparent wall micro/nanodispensers would be designed due to biological application. To avoid lysis (cellular damage) or broken nozzles, some nozzles were designed sharply, in order to pierce wall and membrane surrounding live cells. FIB nanomachined render this type of nozzle. A crucial advantage in MEMS technology is versatility and monolithic integration. MEMS versatility can yield different devices although using the same technological process. We took advantage of this feature and manufactured microelectrodes, microfilters and micromixers as well. As a conclusion, it is worth emphasizing that research in this work range from micro/nanotechnologies to chemistry and biology. The first generation fabricated technology successfully formed SAM over gold surfaces. The second generation pierced walls and membranes in live cell. These devices present quite some advantages compared to conventional glass capillary. The proposed technology allows extreme definition of sizes and shapes in order not to damage cells. Microelectrodes fabricated will be tested inside a neuron cell to record electrical measurements. Work to develop this new application is still in progress.

Aluminum nitride (AlN) thin film is a promising material as buffer layer in GaN-based optoelectronic and electronic devices or as a substrate to fabricate Surface Acoustic Wave (SAW) and Film Bulk Acoustic wave Resonant (FBAR) devices in high frequency in wireless (>1GHz) communication technology. Aluminum nitride, thin film with the c-axis normal to the film is favored in a low energy deposition condition because it places the packed hexagonal basal plane parallel to the substrate surface. Grains of this orientation have a low surface energy which favors rapid growth in a columnar structure. In this experiment r.f. dual ion beam sputtering (DIBS) system is used to prepare the AlN films on Si (100) substrate. Various processing variable were tested to deposit AlN films with desirable properties. After systematic testing, a high quality film with preferred c-axis orientation was grown successfully on Si (100) substrate with Al target under the process parameters of 700 ev energy flux; 55% N2 / (N2+Ar) ratio; 4X10 - 4 torr working pressure with no heating of substrate. The AlN target is also used. The results show the great sensitivity of the films to oxygen-containing environments. Only under low residual oxygen pressure, could aluminum nitride be grown well. The deposited AlN thin film characteristic were studied by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectrometry (SIMS) and Electron Spectroscopy for Chemical Analysis (ESCA).

Ti nano-films are deposited on a NaCl(001) single crystal substrate by ion beam sputtering from a Ti target, and then annealed. Ti crystallites on a NaCl(001) substrate with increase in the substrate temperature and annealing have the preferred orientation (1-101) and (0001).

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Nanocrystalline £\-Zr condensates deposited by ion beam sputtering on the NaCl (100) surfaces and then annealed at 100 ¢J to 750 ¢J in air. The phases present were identified by transmission electron microscopy to be nanometer-size £\-Zr+ZrO¡B£\-Zr+ZrO+c-ZrO2¡Bc-ZrO2¡Bc-+t-ZrO2¡Bt-ZrO2¡Band t-+m-ZrO2 phase assemblages with increasing annealing temperature. The zirconia showed strong {100} preferred orientation due to parallel epitaxy with NaCl (100) when annealed between 150 ¢J and 500 ¢J in air. The c- and t-zirconia condensates also showed (111)-specific coalescence among themselves. The c- and/or t-ZrO2 formation can be accounted for by the small grain size, the presence of low-valence Zr cation and the lateral constraint of the neighboring grains. (Part 1) Nanocrystalline £\-Zr condensates were deposited on the NaCl (100) plane at 25 to 450 ¢J by radio frequency ion beam sputtering from a pure 99.9¢H Zr disk. The nano condensates were identified by transmission electron microscopy to be quasiamorphous, £\-Zr, £\-Zr+ZrO and £\-Zr+ZrO+c-ZrO2 phase assemblages with increasing substrate temperature. At 400 ¢J and under 1-20 sccm oxygen, c- and t-ZrO2 nanocondensates were assembled on NaCl (100) as monolayer nanocrystalline material and showed strong preferred orientation. The c- and/or t-ZrO2 were retained by small grain size, low-valence Zr cation and 2-D matrix constraint of the film. (Part 2) Nanosized c- and t-ZrO2 were formed as monolayer nanocrystalline film on NaCl (100) plane by radio frequency ion beam sputtering. The microstructure and the epitaxy relationship with the NaCl (100) plane were studied by a high resolution transmission electron microscope. The epitaxy orientation was found to be [001]Z//[001]N, [100]Z//[1 0]N (group A), and [011]Z//[001]N, [100]Z//[100]N (group B) between zirconia (Z) and NaCl (N). Group B has two variants and is the dominant type. The possible causes for the epitaxy relationship are discussed. Crystallites within the same group can merge by rotation and coalesce into a single crystal, whereas crystallites in different groups can form high-angle grain boundaries. (Part 3) Special interfaces were formed for the c- and/or t-ZrO2 (Z) nano-crystals when deposited on the NaCl (N) (100) cleavage plane by ion beam sputtering to follow the epitaxy relationships of [001]Z//[001]N, (100)Z//(1 0)N (group A); and [011]Z//[001]N, (100)Z//(100)N (group B1) or (100)Z//(010)N (group B2). The nanoparticles in group A and B were impinged and coalesced to form {220}A/{200}B and {200}A/{111}B interfaces; with anchored dislocation whereas those in group B1 and B2 form {220}B1/{200}B2 interface. The {220}A/{200}B interface is found to be of especially low energy due to good match O2¡V lattice sites, and smoothly joints {200} and {220} planes across the interfaces without mismatch strain and dislocations. The special interfaces may shed light on the epitaxial mechanism of nanocrystalline materials in general. (Part 4)

We have grown the high quality AlGaN/GaN heterostructure by plasma-assisted molecular beam epitaxy. We obtained the mobility of two-dimensional electron gas of the AlGaN/GaN is 9300 cm2/Vs and carrier concentration is 7.9¡Ñ1012 cm-2 by conventional van der Pauw Hall measurement at 77K. The samples made of the AlGaN/GaN heterostructure were patterned to Hall bar geometry with a width of 20£gm by conventional photolithography. After the photolithography, the nanowire was fabricated by the process of focus ion beam (FIB), and the widths of nanowire were reduced to 900 nm, 500 nm, 300 nm, 200nm, 100 nm, 80 nm and 50 nm respectively. The SiO2 layer and Al electrode were deposed on the samples to form nanowired MOSFETs. We have studied the leakage current measurement on the AlGaN/GaN nanowired MOSFETs at 300K. On the 100 nm and 200 nm width of nanowires, we did not observe the leakage current for the gate voltage work range from -2.5 to 3.0 V and from -0.5 to 0.5 V respectively.

The fabrication characteristic of focused ion beam (FIB) for fused quartz was investigated. With the progress of nanotechnology, new technologies and devices are invented constantly. In nanofabrication, FIB has several advantages such as high material removal rate, high resolving power and direct fabrication in some selected areas without etching mask. Therefore, it had been studied in detail to fabricate nano-structures by FIB. In this study, we found out the effect of nano-machining by adjusting the parameters of FIB system such as: beam current, overlap, and dwell time. The fabricated features together with their surface morphology and profile were investigated by scanning electron microscope (SEM) and atomic force microscope (AFM). Results show that when beam current was smaller, overlap was 50% and dwell time was 10£gs could get best performance by FIB.