High-energy Si implantation into silicon creates a net defect distribution that is characterized by an excess of interstitials near the projected range and a simultaneous excess of vacancies closer to the surface. This defect distribution is due to the spatial separation between the distributions of interstitials and vacancies created by the forward momentum transferred from the implanted ion to the lattice atom. This dissertation investigates the evolution of the near-surface vacancy excess in MeV Si-implanted silicon both during implantation and post-implant annealing. Although previous investigations have identified a vacancy excess in MeV-implanted silicon, the investigations presented in this dissertation are unique in that they are designed to correlate the free-vacancy supersaturation with the vacancies in clusters. Free-vacancy (and interstitial) supersaturations were measured with Sb (B) dopant diffusion markers. Vacancies in clusters were profiled by Au labeling; a new technique based on the observation that Au atoms trap in the presence of open-volume defects. The experiments described in this dissertation are also unique in that they were designed to isolate the deep interstitial excess from interacting with the much shallower vacancy excess during post-implant thermal processing.

The sub-surface region of chemical vapour deposition (CVD) diamond was transformed by C+ ion implantation followed by isochronal annealing up to 1200 oC. Different implantation regimes and with different energies at different implantation temperatures would give different thicknesses were studied. This enabled a study in the evolution of the stiffness of the damaged layer as a function of annealing. The technique of choice for this study was the non-destructive Brillouin light scattering (BLS) utilizing two scattering geometries; indirectly scattered phonons (Kr¨uger-type geometry) for temperature anneals up to 600 oC, and the conventional surface ripple mechanism up to 1200 oC. It has been argued that surface acoustic waves (SAW) on a transparent medium are enhanced by applying a thin metallic reflective layer on the surface, this study has showed that opacity of the substrate is key. In fact, bulk modes with SAW-like characteristics emanating from indirect photon scattering off phonons after reflection at the smooth reflective back of the sample dominated down to transmission below 5% which was observed after annealing between 500-600 oC (low annealing temperatures). The other complementing techniques employed to understand the changing structure of the ion implanted diamond were Raman spectroscopy, electromagnetic transmission in the visible range, electron energy loss spectroscopy (EELS) and high-resolution transmission electron microscopy (HRTEM) in addition to theoretical techniques: transport of ions in matter (TRIM), finite element modelling (FEM) and elastodynamic Green’s functions. Although the electronic techniques showed a structurally changing material at the low annealing temperatures, the optical ones did not show significant changes in the ion-damaged material possibly due to lack of distinct interface between the pristine diamond and the ion irradiated region at these lower annealing temperatures.

by Ranganathan Venugopal. / Thesis (Ph.D.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (p. 150-165). / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

Hui Yat Wai. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1993. / Includes bibliographical references (leaves 106-108). / Acknowledgments / Abstract / Chapter 1. --- Introduction --- p.1 / Chapter 2. --- Theory / Chapter 2.1 --- Optical Waveguide --- p.4 / Chapter 2.1.1 --- Optical Waveguide Classification / Chapter 2.1.2 --- Theoretical Analysis of 2-dimensional Step Index Waveguides / Chapter 2.2 --- Optical Waveguides Measurement --- p.18 / Chapter 2.2.1 --- Refractive Index Measurement / Chapter 2.2.2 --- Loss Measurement / Chapter 2.3 --- Ion Implantation and Annealing --- p.36 / Chapter 2.4 --- Refractive Index Change --- p.40 / Chapter 3. --- Equipments and Their Experimental Setup / Chapter 3.1 --- Light Source-Laser Diode --- p.42 / Chapter 3.2 --- Ellipsometry Measurement System --- p.45 / Chapter 3.2.1 --- Ellipsometry Measurement System and its Existing Problems / Chapter 3.2.2 --- Improvement of the Original System / Chapter 3.2.3 --- System Calibration / Chapter 3.3 --- Reflectance Measurement System --- p.51 / Chapter 3.3.1 --- System Design and Setup / Chapter 3.3.2 --- System Calibration / Chapter 3.4 --- End-Coupling Measurement System --- p.56 / Chapter 3.4.1 --- System Setup / Chapter 3.4.2 --- System Calibration / Chapter 4. --- Experiment / Chapter 4.1 --- Samples Preparation --- p.77 / Chapter 4.2 --- Refractive Index Measurement by Ellipsometer --- p.80 / Chapter 4.3 --- Refractive Index Measurement by Reflectance --- p.84 / Chapter 4.4 --- Waveguide Measurement --- p.88 / Chapter 4.4.1 --- Fiber-Waveguide Coupling / Chapter 4.4.2 --- Lens-Waveguide Coupling / Chapter 5. --- Results and Discussion / Chapter 5.1 --- Refractive Index Change and Waveguide Formation --- p.94 / Chapter 5.2 --- Mechanism of Refractive Index Change --- p.100 / Chapter 6. --- Conclusion --- p.103 / Chapter 7. --- Improvement and Extension --- p.105 / Reference --- p.106 / Appendices / Chapter A. --- Thick.m --- p.VI / Chapter B. --- Distrib.m --- p.IX

by Mok Wing Keung. / Parallel title in Chinese characters. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1992. / Includes bibliographical references (leaves 149-154). / Acknowledgement --- p.i / Abstract --- p.ii / Table Of Contents --- p.iii / List Of Figures --- p.v / List Of Tables --- p.ix / List Of Plates --- p.x / Chapter Chapter One --- Introduction / Chapter 1.1 --- General introduction --- p.1 / Chapter 1.2 --- Gallium arsenide --- p.4 / Chapter 1.2.1 --- Basic facts --- p.4 / Chapter 1.2.2 --- Band structure --- p.6 / Chapter 1.2.3 --- Production of GaAs --- p.9 / Chapter 1.3 --- Ion implantation --- p.11 / Chapter 1.3.1 --- Principle of ion implantation --- p.11 / Chapter 1.3.2 --- Basic facts --- p.17 / Chapter 1.3.3 --- Radiation damage and annealing --- p.21 / Chapter 1.4 --- Optical measurements --- p.27 / Chapter 1.4.1 --- Basic facts --- p.27 / Chapter 1.4.2 --- Optical reflectance --- p.29 / Chapter 1.4.3 --- Oxide overlayer --- p.39 / Chapter Chapter Two --- Experimental / Chapter 2.1 --- Sample preparation --- p.42 / Chapter 2.2 --- Ion implantation --- p.46 / Chapter 2.2.1 --- Implantation parameters --- p.46 / Chapter 2.2.2 --- Computer modeling of implantation profiles --- p.48 / Chapter 2.3 --- Annealing --- p.57 / Chapter 2.3.1 --- Conventional annealing --- p.57 / Chapter 2.3.2 --- Rapid thermal annealing --- p.61 / Chapter 2.4 --- Optical reflectance measurement --- p.69 / Chapter 2.4.1 --- Principle of measurement --- p.69 / Chapter 2.4.1.1 --- Relative reflectance measurement --- p.71 / Chapter 2.4.1.2 --- Absolute reflectance measurement --- p.79 / Chapter 2.4.2 --- Error estimation and data reduction --- p.82 / Chapter 2.4.2.1 --- Error estimation --- p.84 / Chapter 2.4.2.2 --- Data reduction --- p.86 / Chapter 2.5 --- Optical microscopy and photoluminescence --- p.90 / Chapter Chapter Three --- Results And Discussion / Chapter 3.1 --- Surface morphology --- p.93 / Chapter 3.2 --- Optical reflectance measurement --- p.101 / Chapter 3.2.1 --- Reflectance spectrum --- p.101 / Chapter 3.2.1.1 --- Reference mirror --- p.101 / Chapter 3.2.1.2 --- Crystalline GaAs --- p.104 / Chapter 3.2.1.3 --- Implanted GaAs before annealing --- p.108 / Chapter 3.2.1.4 --- Conventional annealed GaAs --- p.115 / Chapter 3.2.1.5 --- Rapid thermal annealed GaAs (proximity) --- p.120 / Chapter 3.2.2 --- Extraction of optical constants --- p.128 / Chapter 3.2.2.1 --- Oxide overlayer --- p.128 / Chapter 3.2.2.2 --- Dielectric function --- p.132 / Chapter 3.3 --- Photoluminescence results --- p.143 / Chapter Chapter Four --- Conclusions And Suggestions For Further Work --- p.147 / References --- p.149

by Choi Kup Sze. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1994. / Includes bibliographical references. / Acknowledgement / Abstract / Chapter 1. --- Introduction --- p.1-1 / Chapter 1.1 --- Introduction --- p.1-1 / Chapter 1.2 --- References --- p.1-6 / Chapter 2. --- Theory of Optical Waveguides --- p.2-1 / Chapter 2.1 --- Theory of Planar Slab Waveguides --- p.2-2 / Chapter 2.2 --- Theory of Channel Dielectric Waveguides --- p.2-13 / Chapter 2.2.1 --- Marcatili's Method --- p.2-13 / Chapter 2.2.2 --- Effective Index Method --- p.2-20 / Chapter 2.3 --- References --- p.2-24 / Chapter 3. --- A Numerical Method for Optical Waveguides --- p.3-1 / Chapter 3.1 --- Introduction --- p.3-1 / Chapter 3.2 --- two-dimensional Fourier Series Expansion Method --- p.3-2 / Chapter 3.3 --- References --- p.3-13 / Chapter 4. --- Theory of Directional Couplers --- p.4-1 / Chapter 4.1 --- Dual-Channel Coupler --- p.4-1 / Chapter 4.2 --- Multi-channel Directional Coupler --- p.4-8 / Chapter 4.3 --- References --- p.4-9 / Chapter 5. --- Waveguide Formation by Ion Implantation --- p.5-1 / Chapter 5.1 --- Introduction --- p.5-1 / Chapter 5.2 --- Physics of Ion Implantation --- p.5-3 / Chapter 5.3 --- Lattice Damage and Annealing --- p.5-5 / Chapter 5.3.1 --- Lattice Damage --- p.5-5 / Chapter 5.3.2 --- Annealing --- p.5-6 / Chapter 5.4 --- Index Change due to Implantation --- p.5-8 / Chapter 5.5 --- Waveguide Processing Techniques --- p.5-10 / Chapter 5.5.1 --- Photolithography --- p.5-10 / Chapter 5.5.2 --- Processing Techniques --- p.5-11 / Chapter 5.6 --- References --- p.5-13 / Chapter 6. --- Optical Loss in Waveguides --- p.6-1 / Chapter 6.1 --- Loss Mechanisms in Optical Waveguides --- p.6-1 / Chapter 6.2 --- Principle of Propagation Loss Measurement --- p.6-4 / Chapter 6.2.1 --- Cut-back Method --- p.6-5 / Chapter 6.2.2 --- Scattering Light Method --- p.6-7 / Chapter 6.2.3 --- Fabry-Perot Interference Technique --- p.6-9 / Chapter 6.3 --- References --- p.6-16 / Chapter 7. --- Fabrication and Measurement of Optical Waveguides --- p.7-1 / Chapter 7.1 --- Fabrication of Optical Waveguides --- p.7-1 / Chapter 7.1.1 --- Fabrication of waveguides in GaAs by MeV oxygen ion implantation --- p.7-1 / Chapter 7.1.2 --- Waveguide End Facet Preparation --- p.7-4 / Chapter 7.2 --- Measurement of Optical Waveguides --- p.7-7 / Chapter 7.2.1 --- Laser Sources --- p.7-7 / Chapter 7.2.2 --- Guided Wave Excitation --- p.7-10 / Chapter 7.2.3 --- Intensity Profile Measurement --- p.7-17 / Chapter 7.2.4 --- Coupling Coefficient Measurement --- p.7-20 / Chapter 7.2.5 --- Propagation Loss Measurement --- p.7-25 / Chapter 7.3 --- References --- p.7-34 / Chapter 8. --- Results and Discussions --- p.8-1 / Chapter 8.1 --- Near Field Pattern Measurement --- p.8-1 / Chapter 8.2 --- Discussion on the Index Change of the Implanted GaAs --- p.8-5 / Chapter 8.3 --- Propagation Loss Measurement --- p.8-8 / Chapter 8.4 --- Observation of Optical Coupling in Directional Coupler --- p.8-14 / Chapter 8.5 --- References --- p.8-19 / Chapter 9. --- Conclusion --- p.9-1 / Chapter 10. --- Improvement and Extension --- p.10-1 / Appendix 1 Evaluation of the product〈n2 φuvφu'v'〉 --- p.A1-1 / Appendix 2 Transmission of Lossy Fabry-Perot Cavity --- p.A2-1 / Appendix 3 Effective Index versus Index Difference --- p.A3-1 / Appendix 4 Effect of Temperature on the Transmission of a Fabry-Perot Cavity --- p.A4-1 / Appendix 5 Evaluation of An from the Near Field Pattern --- p.A5-1

by Lai Kwong-Yu. / Thesis submitted in: December 1998. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references (leaves 90-101). / Abstracts in English and Chinese. / Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Metal Silicides --- p.1 / Chapter 1.2 --- Titanium Silicide --- p.8 / Chapter 1.3 --- Goal Of This Project --- p.10 / Chapter 2 --- Sample Preparation And Experimental Methods --- p.12 / Chapter 2.1 --- MEVVA Implantation --- p.12 / Chapter 2.2 --- Sample Preparation --- p.15 / Chapter 2.2.1 --- Implantation Condition --- p.15 / Chapter 2.2.2 --- Thermal Treatment --- p.19 / Chapter 2.3 --- Characterization Methods --- p.20 / Chapter 2.3.1 --- Sheet Resistivity Measurement --- p.22 / Chapter 2.3.2 --- X-Ray Diffraction (XRD) --- p.25 / Chapter 2.3.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.28 / Chapter 2.3.4 --- Transmission Electron Microscopy (TEM) --- p.31 / Chapter 3 --- Characterization of As-implanted Samples --- p.36 / Chapter 3.1 --- Introduction --- p.36 / Chapter 3.2 --- Dose Dependence Of As-implanted Samples --- p.37 / Chapter 3.2.1 --- Sheet Resistance Measurement --- p.37 / Chapter 3.2.2 --- X-Ray Diffraction (XRD) --- p.40 / Chapter 3.2.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.40 / Chapter 3.3 --- Implant Beam Current Dependence Of As-implanted Samples --- p.43 / Chapter 3.3.1 --- Sheet Resistance Measurement --- p.43 / Chapter 3.3.2 --- X-Ray Diffraction (XRD) --- p.44 / Chapter 3.3.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.46 / Chapter 3.4 --- Transmission Electron Microscopy (TEM) --- p.48 / Chapter 3.5 --- Summary --- p.52 / Chapter 4 --- Characterization of Annealed Samples --- p.57 / Chapter 4.1 --- Introduction --- p.57 / Chapter 4.2 --- Dose Dependence Of Annealed Samples --- p.58 / Chapter 4.2.1 --- Sheet Resistance Measurements --- p.58 / Chapter 4.2.2 --- X-Ray Diffraction (XRD) --- p.61 / Chapter 4.2.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.63 / Chapter 4.3 --- Implant Beam Current Dependence Of Annealed Samples --- p.66 / Chapter 4.3.1 --- Sheet Resistance Measurement --- p.66 / Chapter 4.3.2 --- X-Ray Diffraction (XRD) --- p.68 / Chapter 4.3.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.70 / Chapter 4.4 --- Annealing Temperature Dependence Of Annealed Samples --- p.71 / Chapter 4.4.1 --- Sheet Resistance Measurement --- p.71 / Chapter 4.4.2 --- X-Ray Diffraction (XRD) --- p.73 / Chapter 4.4.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.75 / Chapter 4.5 --- Annealing Time Dependence Of Annealed Samples --- p.78 / Chapter 4.5.1 --- Sheet Resistance Measurement --- p.78 / Chapter 4.5.2 --- X-Ray Diffraction (XRD) --- p.79 / Chapter 4.5.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.81 / Chapter 4.6 --- Transmission Electron Microscopy (TEM) --- p.82 / Chapter 4.7 --- Summary --- p.84 / Chapter 5 --- Conclusion --- p.87 / Chapter 5.1 --- Main Results Of This Work --- p.87 / Chapter 5.2 --- Suggestions To Future Works --- p.89 / Bibliography

Tsang Wei Mong. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references (leaves 86-93). / Abstracts in English and Chinese. / Abstract --- p.i / Acknowledgement --- p.iv / Contents --- p.v / List of Figure Captions --- p.vi / List of Table Captions --- p.vii / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.2 --- Theory of Electron Field Emission --- p.1 / Chapter 1.2.1 --- Fowler Nordheim Planar Field Emission Model for Metal --- p.2 / Chapter 1.3 --- Goal of this Project --- p.9 / Chapter Chapter 2 --- Sample Preparation and Characterization Methods / Chapter 2.1 --- Sample Preparation --- p.12 / Chapter 2.1.1 --- MEVVA Implantation System --- p.13 / Chapter 2.1.2 --- Implantation Conditions --- p.16 / Chapter 2.1.3 --- Simulation by SRIM --- p.17 / Chapter 2.2 --- Characterization Methods --- p.20 / Chapter 2.2.1 --- AFM and CAFM --- p.20 / Chapter 2.2.2 --- RBS --- p.22 / Chapter 2.2.3 --- XPS --- p.24 / Chapter 2.2.4 --- XRD --- p.27 / Chapter 2.2.5 --- TEM --- p.28 / Chapter 2.2.6 --- FE Measurement --- p.29 / Chapter Chapter 3 --- FE Properties of IBS SiC layers / Chapter 3.1 --- Introduction --- p.31 / Chapter 3.2 --- Field Enhancement Mechanisms for the IBS SiC Layers --- p.32 / Chapter 3.3 --- Embedded Conducting Grains (ECG) Model of Local Field Enhancement --- p.45 / Chapter 3.4 --- The Role of Conducting Grains in Field Enhancement --- p.48 / Chapter Chapter 4 --- FE Properties of W modified IBS SiC layer / Chapter 4.1 --- Introduction --- p.58 / Chapter 4.2 --- Experimental --- p.59 / Chapter 4.3 --- Phase and Structural Evolution of W Modified IBS SiC Layers --- p.60 / Chapter 4.3.1 --- XRD Results --- p.60 / Chapter 4.3.2 --- XPS Results --- p.64 / Chapter 4.3.3 --- TEM Results --- p.69 / Chapter 4.3.4 --- AFM Results --- p.74 / Chapter 4.4 --- Field Emission Properties --- p.76 / Chapter Chapter 5 --- Conclusion --- p.84 / Reference --- p.86 / List of Publications --- p.94 / Appendix --- p.96

by Kong Lim Pun. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2000. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Kong Lim Pun. / ABSTRACT --- p.i / 摘要 --- p.iii / ACNOWLEDGEMENT --- p.iv / TALE OF CONTENTS --- p.v / LIST OF FIGURES --- p.ix / LIST OF TABLES --- p.xi / Chapter CHAPTER 1 --- Introduction / Chapter 1.1 --- Nanoparticles and nanostructural materials --- p.1 / Chapter 1.2 --- Materials of copper-implanted and nickel-implanted fused silica --- p.4 / Chapter 1.2.1 --- Overview --- p.4 / Chapter 1.2.2 --- Formation of nanoparticles --- p.5 / Chapter 1.2.3 --- Optical properties of the material --- p.9 / Chapter 1.3 --- Goals of the project --- p.12 / Reference --- p.13 / Chapter CHAPTER 2 --- Background of Study / Chapter 2.1 --- Introduction --- p.15 / Chapter 2.2 --- Optical absorption of metal nanocluster composite glasses --- p.16 / Chapter 2.2.1 --- Dielectric constant --- p.16 / Chapter 2.2.2 --- The features of surface plasmon resonance peak --- p.16 / Chapter 2.3 --- Third-order optical nonlinearity of metal nanocluster composite glasses --- p.17 / Chapter 2.3.1 --- Classical field confinement --- p.19 / Chapter 2.3.2 --- Quantum confinement --- p.21 / Chapter 2.3.2.1 --- Intraband transitions --- p.21 / Chapter 2.3.2.2 --- Interband transitions --- p.22 / Chapter 2.3.2.3 --- Hot-electron transitions --- p.22 / Chapter 2.4 --- Preparation Methods of MNCG(s) --- p.23 / Chapter 2.4.1 --- Ion implantation --- p.23 / Chapter 2.4.2 --- Ion exchange --- p.23 / Chapter 2.4.3 --- Sputtering deposition --- p.24 / Chapter 2.4.4 --- Melt -quenching and heat-treatment processes --- p.25 / Chapter 2.4.5 --- Ion-beam assisted deposition --- p.25 / Chapter 2.5 --- Applications --- p.25 / Reference --- p.27 / Chapter CHAPTER 3 --- Instrumentation / Chapter 3.1 --- Introduction --- p.29 / Chapter 3.2 --- Metal Vapour Vacuum Arc (MEVVA) ion source implantation --- p.29 / Chapter 3.2.1 --- Background of MEVVA ion source --- p.29 / Chapter 3.2.2 --- Characteristics of MEVVA ion source --- p.32 / Chapter 3.2.3 --- Implantation conditions --- p.33 / Chapter 3.3 --- X-ray photoelectron spectroscopy --- p.34 / Chapter 3.3.1 --- Theory --- p.34 / Chapter 3.3.2 --- Qualitative analysis --- p.38 / Chapter 3.3.2.1 --- Chemical shift peaks --- p.40 / Chapter 3.3.2.2 --- Auger peaks --- p.40 / Chapter 3.3.2.3 --- Energy loss peaks --- p.40 / Chapter 3.3.3 --- Quantitative analysis --- p.41 / Chapter 3.3.3.1 --- Homogeneous system --- p.41 / Chapter 3.3.3.2 --- Determination of layer thickness --- p.45 / Chapter 3.3.4 --- Instrumental components of XPS --- p.47 / Chapter 3.3.4.1 --- Sample introduction system --- p.47 / Chapter 3.3.4.2 --- X-ray source --- p.49 / Chapter 3.3.5 --- Application to metal nanoclusters composite glasses --- p.49 / Chapter 3.3.5.1 --- Compositional analysis --- p.50 / Chapter 3.3.5.2 --- Depth profiling --- p.50 / Chapter 3.3.5.3 --- Auger parameter --- p.50 / Chapter 3.4 --- Transmission electron microscopy --- p.53 / Chapter 3.4.1 --- Basic instrumentation of TEM --- p.53 / Chapter 3.4.2 --- Preparation of TEM cross section specimen --- p.54 / Chapter 3.4.2.1 --- Cutting --- p.54 / Chapter 3.4.2.2 --- "Disc-cutting, grinding, dimpling " --- p.54 / Chapter 3.4.2.3 --- Ion beam thinning --- p.56 / Chapter 3.4.3 --- Image contrast of TEM --- p.56 / Chapter 3.4.4 --- Basic operations of TEM --- p.57 / Chapter 3.4.4.1 --- Bright field and dark field images --- p.57 / Chapter 3.4.4.2 --- Selected area diffraction (SAD) --- p.58 / Chapter 3.4.4.3 --- Convergent Beam Electron Diffraction --- p.59 / Reference --- p.60 / Chapter CHAPTER 4 --- Composition and Nano structure of Copper-implanted Fused Silica / Chapter 4.1 --- Introduction --- p.62 / Chapter 4.2 --- The Atomic Distribution and Chemical State of Copper Nanocluster --- p.64 / Chapter 4.3 --- TEM Studies of Copper Nanoclusters --- p.70 / Chapter 4.4 --- Theoretical Calculation on Ratio of Surface to Bulk Atoms of Copper Nanocluster --- p.73 / Chapter 4.5 --- Conclusions --- p.74 / Reference --- p.77 / Chapter CHAPTER 5 --- Composition and Nanostructure of Nickel-implanted Fused Silica / Chapter 5.1 --- Introduction --- p.79 / Chapter 5.2 --- The distribution of nickel nanoclusters --- p.80 / Chapter 5.3 --- TEM studies of nickel nanoclusters --- p.81 / Chapter 5.4 --- Chemical state of nickel clusters --- p.87 / Chapter 5.5 --- Discussion --- p.90 / Chapter 5.6 --- Conclusion --- p.90 / Reference --- p.92 / Chapter CHAPTER 6 --- Conclusions --- p.94

Chow Chi Fai. / Thesis submitted in: August 2005. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Abstracts in English and Chinese. / Abstract / Abstract (Chinese) / A cknowledgements / Table of Contents / List of Figures / List of Tables / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- The need for light emission from silicon --- p.1-1 / Chapter 1.2 --- Silicon-based light emitting material 1 - --- p.2 / Chapter 1.3 --- Literature overview --- p.1-4 / Chapter 1.4 --- Project goal --- p.1-10 / Reference --- p.1-11 / Chapter Chapter 2 --- Experimental details / Chapter 2.1 --- Introduction --- p.2-1 / Chapter 2.2 --- Sample preparation techniques --- p.2-1 / Chapter 2.2.1 --- MEVVA ion implantation --- p.2-1 / Chapter 2.2.2 --- PL samples preparation conditions --- p.2-3 / Chapter 2.2.3 --- EL samples preparation conditions --- p.2-4 / Chapter 2.3 --- Characterization techniques --- p.2-7 / Chapter 2.3.1 --- Photoluminescence spectroscopy (PL) --- p.2-7 / Chapter 2.3.2 --- Electroluminescence spectroscopy (EL) --- p.2-9 / Chapter 2.3.3 --- Rutherford backscattering spectroscopy (RBS) --- p.2-10 / Chapter 2.3.4 --- X-ray diffraction (XRD) --- p.2-12 / Chapter 2.3.5 --- Transmission electron microscopy (TEM) --- p.2-13 / Reference --- p.2-15 / Chapter Chapter 3 --- Resutls and Discussions / Chapter 3.1 --- RBS results --- p.3-1 / Chapter 3.2 --- XRD results --- p.3-8 / Chapter 3.3 --- TEM results --- p.3-12 / Chapter 3.3.1 --- Effects of the implantation energy on the microstructure of samples --- p.3-13 / Chapter 3.3.2 --- Effects of the implantation dose on the microstructure of samples --- p.3-16 / Chapter 3.4 --- Photoluminescence results --- p.3-19 / Chapter 3.4.1 --- Effect of implantation energy on the PL --- p.3-19 / Chapter 3.4.2 --- Effect of FA temperature on the PL --- p.3-24 / Chapter 3.4.3 --- Effect of FA duration on the PL --- p.3-26 / Chapter 3.4.4 --- Effect ofRTA duration on the PL --- p.3-28 / Chapter 3.4.5 --- Effect ofRTA temperature on the PL --- p.3-30 / Chapter 3.4.6 --- Effect of implantation dose on the PL --- p.3-32 / Chapter 3.4.7 --- Si band edge enhancement --- p.3-34 / Chapter 3.4.8 --- Photoluminescence spectra as a function of excitation power density --- p.3-37 / Chapter 3.4.9 --- Photoluminescence spectra as a function of measurement temperature --- p.3-45 / Chapter 3.5 --- Electroluminescence results --- p.3-52 / Chapter 3.5.1 --- EL quantum efficiency --- p.3-60 / Reference --- p.3-61 / Chapter Chapter 4 --- Conclusion and future works / Chapter 4.1 --- Conclusion --- p.4-1 / Chapter 4.2 --- Future works --- p.4-2 / Appendix I / Appendix II