Thesis (M.Sc.)--University of Wollongong, 2005. / Typescript. Includes bibliographical references: leaf 146-148.

Thesis (Ph. D.)--Ohio State University, 2008. / Title from first page of PDF file. Includes bibliographical references (p. 115-119).

Thesis (Ph. D.)--University of Hong Kong, 2005.

Thesis (Ph. D.)--Ohio State University, 2006. / Title from first page of PDF file. Includes bibliographical references (p. 153-159).

The irradiation of high Tc superconducting thin films with a focused electron beam, such as that obtained in a scanning transmission electron microscope (STEM), can result in the formation of a Josephson junction. The conditions required for the formation of these Josephson junctions in YBa2Cu3O7-d and related compounds are discussed as well as the physical properties of the irradiated material. From electrical transport measurements of individual Josephson junctions it was found that these junctions have a Superconductor/Normal/Superconductor (SNS) nature. Low temperature anneal studies indicate that Josephson junctions with optimum properties can be obtained by a combination of a high electron dose and subsequent low temperature anneal. Extremely high electron doses resulted in the formation of a purely resistive region. The electrical transport in such regions with a dimension of 200 nm in the direction of current transport is shown to be compatible with variable range hopping (VRH). Barriers with the same length but a finite superconducting transition temperature showed a low bias resistance that is significantly lowered due to proximity coupling. Using purely resistive regions in combination with Josephson junctions, devices consisting of two closely spaced Josephson junctions with a third terminal connected to the shared electrode were fabricated and characterised (minimum separation 20 nm). The distinct behaviour of the Josephson critical current with applied magnetic field (Ic(B)) of these devices was found to be well described by a newly developed model, which incorporates the effect of the static redistribution current in the shared electrode on the phase distribution of the Josephson junctions. An important finding is that the behaviour of the high critical current with applied magnetic field of two closely spaced junctions was found to be consistent with a model system consisting of a closely spaced Josephson junction and a resistive barrier. A three terminal device with Josephson junctions at small separations was found to have a significantly increased trans resistance when compared with the individual resistance of the Josephson junctions it constituted of. A number of illustrative examples of device structures realised with the focused electron beam irradiation technique are also included.

No description available.

Superconductor electronics based on the Single Flux Quantum (SFQ) technology are considered a strong contender for the ‘beyond CMOS’ future of digital circuits because of the high speed and low power dissipation associated with them. In fact, digital operations beyond tens of GHz have been routinely demonstrated in the SFQ technology. These circuits have widespread applications such as high-speed analog-to-digital conversion, digital signal processing, high speed computing and in emerging topics such as control circuitry for superconducting quantum computing. Rapid Single Flux Quantum (RSFQ) circuits have emerged as a promising candidate within the SFQ technology, with information encoded in picosecond wide, milli-volt voltage pulses. As is the case with any integrated circuit technology, scalability of RSFQ circuits is essential to realizing their applications. These circuits, based on the Josephson junction, require a DC bias current for the correct operation. The DC bias current requirement increases with circuit complexity, and this has multiple implications on circuit operation. Large currents produce magnetic fields that can interfere with logic operation. Furthermore, the heat load delivered to the superconducting chip also increases with current which could result in the circuit becoming ‘normal’ and not superconducting. These problems make reduction of the bias current necessary. Serial Biasing (SB) is a bias current reduction technique, that has been proposed in the past. In this technique, a digital circuit is partitioned into multiple identical islands and bias current is provided to each island in a serial manner. While this scheme is promising, there are multiple challenges such as design of the driver-receiver pair circuit resulting in robust and wide operating bias margins, current management on the floating islands, etc. This thesis investigates SB in a systematic manner, focusing on the design and measurement of the fundamental components of this technique with an emphasis on reliability and scalability. It presents works on circuit techniques achieving high speed serially biased RSFQ circuits with robust operating margins and the experimental evidence to support the ideas. It develops a framework for serial biasing that could be used by electronic design tools to automate design and synthesis of complex RSFQ circuits. It also investigates Passive Transmission Lines (PTLs) for use as passive interconnects between library cells in a complex design, reducing the DC bias current required by the active circuitry.

No description available.

In this research we looked at how fluxons propagate in an annular Josephson junction containing a microshort. We studied this from a theoretical stance and looked at how a single fluxon based on the sine-Grodon soliton equation propagates in this type of junction. It has been seen from a variety of studies that fluxons have many applications through the use of Josephson junctions. The aim of this thesis was to see whether a fluxon will show new properties whilst coming into contact with a microshort located in the junction. We also explored the different geometries a Josephson junction can have and whether that would show the fluxon to present new phenomena. We will also examine point particle systems. With this in mind we took a keen interest in how the interaction between two of these particles in a double well potential would present itself and whether a relationship would become apparent. Alongside the point particle system we modelled fluxons in a double well potential and comment on the similarities with the point particle system. With the aid of the computer programmes Mathematica and COMSOL Multiphysics we were able to compute these different theoretical models and present the work in a logical order with a progression from a single point particle in a double well potential to a fluxon in a heart-shaped Josephson junction. We have looked at current theories and ideas present in this area of condensed matter physics and have explained these in the subsequent thesis.

Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2007. / A major challenge in the design and operation of High Temperature Superconducting (HTS) devices is the fabrication of reproducible Josephson junctions with good IcRn products. One objective of this thesis was to fabricate successfully HTS step-edge junctions. This objective necessitated a critical evaluation of the available facilities to provide much needed improvements. These improvements included a newly optimised photolithography process, the incorporation of a three-gridded extraction system into the in-house argon ion mill as well as alterations to the Pulsed Laser Deposition (PLD) system to improve thin film quality. These process modifications finally allowed for the fabrication of novel PrBa2Cu3O7−δ buffered step-edge junctions. These junctions were tested for dc and ac Josephson effects and displayed IcRn products of 1.5 mV at 55 K as well as well-defined Shapiro steps. A second objective was to introduce a high quality thin film deposition system that could produce smooth superconducting films for use in filters and multilayer technology. An Inverted Cylindrical Magnetron system was built and optimised to grow YBa2Cu3O7−δ thin films on MgO (001) substrates. A complete optimisation process of these films are presented by utilising several growth and electrical characterisation methods such as XRD, RBS and AFM.