The LAMBDA-DIODE was invented in integrated-circuit form in 1974. There was a proposal about this device's application in memory circuits at that time. This thesis is to evaluate the circuit performance of the COMPLEMENTARY JFET LAMBDA-DIODE SRAM. It investigates the speed, power consumption and chip area of this circuit compared with the JFET CROSS COUPLED SRAM by using SPICE and breadboard simulation techniques. The results show positive signs of the Λ-DIODE's feasibility for use in VLSI static memory circuits from the chip area aspect if the parasitic capacitance of the JFET device could be minimized to reduce the power delay product.

Thesis (M.S.)--State University of New York at Binghamton, Department of Physics, 2006. / Includes bibliographical references.

Thesis (M.S.)--Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

published_or_final_version / abstract / toc / Electrical and Electronic Engineering / Master / Master of Philosophy

Thesis (M.S. in Electrical Engineering)--Vanderbilt University, Dec. 2007. / Title from title screen. Includes bibliographical references.

Thesis (Ph. D.)--Rutgers University, 2008. / "Graduate Program in Electrical and Computer Engineering." Includes bibliographical references (p. 80-83).

It is proposed to represent a nonlinear two-port device by a scattering parameter (S-parameter) model containing a single nonlinearity. Furthermore, it is proposed that the nonlinearity be modeled as a memoryless nonlinear function. A bipolar junction transistor (BJT) operating in the active region is suggested as one application of this modeling approach. The validity of the model is demonstrated by the comparison of measured and model-predicted data for a microwave BJT. The proposed nonlinear model is represented by a linear three-port flowgraph having one of its ports terminated in a real-valued, nonlinear reflection. The model parameters are determined from measurements of device-under-test (DUT) transmission and reflection at various input drive levels. As an illustration of its utility, the model is applied to the design of an oscillator. The measured results of a constructed oscillator are provided. A presentation of a new form of calibration for microwave measurement systems precedes the nonlinear modeling discussion. The new calibration technique combines the transmission line approach to calibration with a load-pull process common to nonlinear device measurements. A two-port, one-way measurement process obviates the need for DUT reversal. The calibrated measurement of input reflection, transmission, and load reflection is discussed. In addition, the procedure for determining the small-signal S parameters of the DUT is given. / Master of Science

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No description available.

Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. However, the radiation tolerance and reliability of SiC-based devices needs to be understood by testing devices  under controlled radiation environments. These kinds of studies have been previously performed on diodes and MESFETs, but multilayer devices such as bipolar junction transistors (BJT) have not yet been studied. In this thesis, SiC material, BJTs fabricated from SiC, and various dielectrics for SiC passivation are studied by exposure to high energy ion beams with selected energies and fluences. The studies reveal that the implantation induced crystal damage in SiC material can be partly recovered at relatively low temperatures, for damag elevels much lower than needed for amorphization. The implantation experiments performed on BJTs in the bulk of devices show that the degradation in deviceperformance produced by low dose ion implantations can be recovered at 420 oC, however, higher doses produce more resistant damage. Ion induced damage at the interface of passivation layer and SiC in BJT has also been examined in this thesis. It is found that damaging of the interface by ionizing radiation reduces the current gain as well. However, for this type of damage, annealing at low temperatures further reduces the gain. Silicon dioxide (SiO2) is today the dielectric material most often used for gate dielectric or passivation layers, also for SiC. However, in this thesis several alternate passivation materials are investigated, such as, AlN, Al2O3 and Ta2O5. These materials are deposited by atomic layer deposition (ALD) both as single layers and in stacks, combining several different layers. Al2O3 is further investigated with respect to thermalstability and radiation hardness. It is observed that high temperature treatment of Al2O3 can substantially improve the performance of the dielectric film. A radiation hardness study furthermore reveals that Al2O3 is more resistant to ionizing radiation than currently used SiO2 and it is a suitable candidate for devices in radiation rich applications. / QC 20120117