Cette thèse est consacrée à l'étude des propriétés de transport statique et dynamique du gaz d'électrons bidimensionnel supraconducteur à l'interface LaAlO3/SrTiO3. Dans un premier temps, nous étudions l'effet du désordre microscopique induit par le dopage en Chrome, sur la supraconductivité et le couplage spin-orbite en fonction de la densité de porteur modulée par effet de champ. Dans une géométrie de grille locale au-dessus du gaz, nous montrons le contrôle électrostatique de la transition supraconducteur-isolant. De même, nous analysons l'ajustement du couplage spin-orbite contrôlé par effet de champ. A l'aide de méthodes de nanofabrication par lithographie électronique, nous démontrons la première réalisation d'un point critique quantique dans LaAlO3/SrTiO3. En changeant le confinement latéral et le niveau de Fermi par effet de champ, nous sommes capables de régler le nombre de canaux conducteurs dans l'état normal et de mesurer la quantification de la conductance. Enfin, nous présentons des mesures radio-fréquence qui donnent accès aux propriétés dynamiques du gaz supraconducteur. L'évolution de la conductivité en fonction de la densité de porteurs et de la température est comparée avec la théorie standard BCS/Mattis-Bardeen d'une part, et avec la théorie BKT d'autre part. / This thesis is devoted to the study of static and dynamical transport properties of the superconducting two-dimensional electron gas at the LaAlO3/SrTiO3 interface. Under strong 2D confinement, the degeneracy of the t$_{2g}$ bands of SrTiO$_3$ is lifted at the interface, generating a rich and complex band structure. Starting from a free electron model, we derive numerically a self-consistent calculation of the potential well and the band structure (chapter 1). These simulations highlight the presence of two types of bands d$_{xy}$ and d$_{xz/yz}$ with very different transport properties. We investigate first the effect of microscopic disorder introduced by Cr doping, on superconductivity and spin-orbit coupling over a wide range of back-gate doping (chapter 3). We also describe the first implementation of a field-effect device where the superconductor-insulator transition could be continuously tuned with a top-gate. The presence of a strong spin-orbit coupling that could be controlled with the top-gate voltage is also demonstrated by analyzing the magneto-transport measurements. The gate dependence of the spin-splitting energy, of the order of a few meV, is found to be consistent with Rashba spin-orbit coupling. Going one step further in nanofabrication, we report on the first realization of a quantum point contact in LaAlO$_3$/SrTiO$_3$ using split gates (chapter 6). To go further in the understanding of the LaAlO$_3$/SrTiO$_3$ interface, we present high frequency measurements of the conductivity $\sigma$ (chapter 5). This measurement gives us access to the superfluid stiffness and to the gap energy via the BCS theory. We show that the competition between these two energy scales controls the superconducting Tc in the phase diagram.

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Reactive molecular-beam epitaxy (MBE) and pulsed-laser deposition (PLD) are the two most successful growth techniques for epitaxial heterostructures of complex oxides. PLD possesses experimental simplicity, low cost, and versatility in the materials to be deposited. Reactive MBE employing alternately-shuttered elemental sources (atomic layer-by-layer MBE, or ALL-MBE) can control the cation stoichiometry precisely, thus producing oxide thin films of exceptional quality. There are, however, major drawbacks to the two techniques. Reactive MBE is limited to source elements whose vapor pressure is sufficiently high; this eliminates a large fraction of 4- and 5-d metals. In addition, the need for ozone to maintain low-pressure MBE conditions increases system complexity in comparison to conventional PLD. On the other hand, conventional PLD using a compound target often results in cation off-stoichiometry in the films. This thesis presents an approach that combines the strengths of reactive MBE and PLD: atomic layer-by-layer laser MBE (ALL-Laser MBE) using separate oxide targets. Ablating alternately the targets of constituent oxides, for example SrO and TiO2, a SrTiO3 film can be grown one atomic layer at a time. Stoichiometry for both the cations and oxygen in the oxide films can be controlled. Using Sr1+xTi1-xO3, CaMnO3, BaTiO3 and Ruddlesden–Popper phase Lan+1NinO3n+1 (n = 4) as examples, the technique is demonstrated to be effective in producing oxide films with stoichiometric and crystalline perfection. By growing LaAl1+yO3 films of different stoichiometry on TiO2-terminated SrTiO3 substrate at high oxygen pressure, it is shown that the behavior of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface can be quantitatively explained by the polar catastrophe mechanism. / Physics