In this thesis, a novel method for multi-pulse with equal chirp characteristics and more efficient THz generation through two photon absorption (TPA) are investigated and demonstrated. These are all the first time, for our best knowledge, odd multi-pulses generation and innovative approach for efficient THz through TPA are proposed and studied. By modulating the amplitude and phase of the spatial light modulator with the pulse shaper, the number of multi-pulses can be adjustable without the limitation of even number only. Meanwhile, the chirp properties of the generated pulses are with the same characteristics and tunable also. For the case with bandwidth of 10nm, the generated multi-pulses with equal chirps varying from -20000fs^2 to 20000fs^2 are demonstrated and the results have a good agreement with the theoretical estimation. We also discuss the number of the multi-pulses and inequalities of the amplitude of the pulses are limited by the spectral resolution of SLM within the pulse shaper. Regarding to efficient THz radiation, it can be generated more efficiently from a low-temperature-grown GaAs (LT-GaAs) photoconductive (PC) antenna by taking into account the TPA induced photo-carrier in the photoconductor. A rate-equation-based approach using the Drude-Lorentz model taking into account the band-diagram of LT-GaAs is used for the theoretical analysis. The super-linear power dependent photocurrent clarifies the role of TPA. Previously unnoticed THz pulse features and anomalously increasing THz radiation power rather than saturation were observed. These are in good agreement with the theoretical predictions.

The nonlinear optical response of low-temperature (LT) grown GaAs were studied using four-wave mixing techniques. Through measurements of the four-wave mixing response as a function of pulse delay and photon energy, a strong optical response was identi ed associated with the fundamental band gap exciton. These experiments therefore demonstrated the importance of the exciton in understanding the ultrafast nonlinear optical response of LT-GaAs despite the absence of any evidence of the exciton in past linear absorption studies in this material. Measurement of the fourwave mixing response as a function of pulse delay and the polarization states of the two excitation pulses shows that the dominant contribution to the exciton signal is tied to excitation-induced dephasing. Four-wave mixing experiments in which the sample is exposed to an additional laser pulse indicate that the exciton signal may be strongly diminished due to a combination of screening and a reduction in the total dephasing time. The short temporal duration of the above e ect provides evidence of an ultrashort (< 100 fs) electron trapping time in this system tied to arsenic related defects introduced during low-temperature growth. These ndings are of importance to the understanding of the optical properties of LT-GaAs and will aid in the development of optoelectronic devices using this material system.

Optical studies of heavily-doped GaAs:C grown at low temperature by molecular beam epitaxy were performed using room-temperature photoluminescence, infrared transmission, and Raman scattering measurements. The photoluminescence experiments show that in LT-GaAs:C films grown at temperatures below 400 °C, nonradiative recombination processes dominate and photoluminescence is quenched. When the growth temperature exceeds 400 °C, band-to-band photoluminescence emission appears. We conclude that the films change in character from LT-GaAs:C to normal GaAs:C once the growth temperature reaches 400 °C. Annealing, however, shows a different behavior. Once grown as LT-GaAs:C, this material retains its nonconducting nonluminescing LT characteristics even when annealed at 600 °C. The Raman-scattering measurements showed that the growth temperature and the doping concentration influence the position, broadening, and asymmetry of the longitudinal-optical phonon Raman line. We attribute these effects to changes in the concentration of interstitial carbon in the films. Also, the shift of the Raman line was used to estimate the concentration of arsenic-antisite defects in undoped LT-GaAs. The infrared transmission measurements on the carbon-doped material showed that only a fraction of the carbon atoms occupy arsenic sites, that this fraction increases as the growth temperature increases, and that it reaches about 100% once the growth temperature reaches 400 °C. The details of all these measurements are discussed. Infrared transmission and photoluminescence measurements were also carried out on heavily-doped GaAs:C films grown by molecular beam epitaxy at the standard 600 C temperature. The infrared results reveal, for dopings under 5 x 10⁹ cm⁻³, a linear relation between doping concentration and the integrated optical absorption of the carbon localized-vibrational-mode band. At higher dopings, the LVM integrated absorption saturates. Formation of C_As-C_As clusters is proposed as the mechanism of the saturation. The photoluminescence spectra were successfully analyzed with a simple model assuming thermalization of photoelectrons to the bottom of the conduction band and indirect-transition recombination with holes populating the degenerately doped valence band. The analysis yields the bandgap reduction and the Fermi-level-depth increase at high doping. / Ph. D.