We imitated the sandwich structure of TMR(Tunneling Magnetoresistance) to apply to CMR(Colossal Magnetoresistance) material . We choose one of the Colossal Magnetoresistance material La0.67Sr0.33MnO3(113) to be the Ferromagnetic(FM) layers as top and bottom layer in sandwich structure and use La0.67Sr0.33MnO3 ¡P SrO(214) to be middle layer which have Antiferromagnetic(AFM) property to form FM-AFM-FM structure. The FM and AFM layer can match their lattice in interface joint. What its purpose is to use this structure to enhance SPT (Spin Polarization Tunneling) effect and let spintronics can periodical spin-flip in supper lattice structure of antiferromagnetic. Upon this compose we try to show increase the LFMR (Low Field Magnetoresistance) by use CMR. The experiment result shows maybe the film structure damage occurred in our made TMR tunneling device process (ex. Ion etching process), so we should improvement the process to get the exactly experiment data. Additional, due to the alignment of the moment of La0.67Sr0.33MnO3 is unstable, the back and forth hysteresis loop can¡¦t overlap, So that afterwards we can use the more stable material La0.67Ca0.33MnO3 which have more stable moment.