This thesis puts focus on the technological challenges for Wavelength Division Multiplexed Passive Optical Network (WDM-PON) implementation, and presents novel semiconductor optical devices for deployment at the optical network unit (ONU). The first-ever reported L-band Reflective semiconductor optical amplifier (RSOA) is presented based on InP-base material. A theoretical model is developed to estimate the optical gain and the saturation power of this device compared to a conventional SOA. Experiments on this device design show long-range telecom wavelength operation, with polarization-independent gain of greater than 20 dB, and low saturation output power of 0 dBm suitable for PON applications. Next, the effect of the amplified spontaneous emission noise of RSOA devices on WDM-PON system is investigated. It is shown through theoretical modeling and simulations that the RSOA noise combined with receiver noise statistics increase probability of error, and induce considerable power penalties to the WDM-PON system. By improving the coupling efficiencies, and by distributing more current flow to the input of these devices, steps can be taken to improve device noise characteristics. Further, in spectrally-spliced WDM-PONs deploying RSOAs, the effect of AWG filter shape on system performance is investigated. Simulation modeling and experiments show that deployment of Flat-band AWGs is critical for reducing the probability of error caused by AWG spectral shape filtering. Flat-band athermal AWGs in comparison to Gaussin-shape counterparts satisfy the maximum acceptable error probability requirements, and reduce the power penalty associated with filtering effect. In addition, detuning between two AWG center wavelengths impose further power penalties to the WDM-PON system. In the last section of this thesis, motivated by RSOA device system limitations, a novel injection-locked Fabry-Perot (IL-FP) device is presented which consists of a gain section monolithically integrated with a phase section. The gain section provides locking of one FP mode to a seed source wavelength, while the phase modulator allows for adjusting the wavelength of the internal modes by tuning bias current to maintain mode-locking. This device counters any mode drifts caused by temperature variations, and allows for cooler-less operation over a wide range of currents. The devices and the performance metrics subsequently allow for a hybrid integration platform on a silicon substrate and integrate many functionalities like reflective modulator with thin film dielectric filter and receiver on a single chip for deployment at the user-end of future-proof low cost WDM-PONs.

This thesis puts focus on the technological challenges for Wavelength Division Multiplexed Passive Optical Network (WDM-PON) implementation, and presents novel semiconductor optical devices for deployment at the optical network unit (ONU). The first-ever reported L-band Reflective semiconductor optical amplifier (RSOA) is presented based on InP-base material. A theoretical model is developed to estimate the optical gain and the saturation power of this device compared to a conventional SOA. Experiments on this device design show long-range telecom wavelength operation, with polarization-independent gain of greater than 20 dB, and low saturation output power of 0 dBm suitable for PON applications. Next, the effect of the amplified spontaneous emission noise of RSOA devices on WDM-PON system is investigated. It is shown through theoretical modeling and simulations that the RSOA noise combined with receiver noise statistics increase probability of error, and induce considerable power penalties to the WDM-PON system. By improving the coupling efficiencies, and by distributing more current flow to the input of these devices, steps can be taken to improve device noise characteristics. Further, in spectrally-spliced WDM-PONs deploying RSOAs, the effect of AWG filter shape on system performance is investigated. Simulation modeling and experiments show that deployment of Flat-band AWGs is critical for reducing the probability of error caused by AWG spectral shape filtering. Flat-band athermal AWGs in comparison to Gaussin-shape counterparts satisfy the maximum acceptable error probability requirements, and reduce the power penalty associated with filtering effect. In addition, detuning between two AWG center wavelengths impose further power penalties to the WDM-PON system. In the last section of this thesis, motivated by RSOA device system limitations, a novel injection-locked Fabry-Perot (IL-FP) device is presented which consists of a gain section monolithically integrated with a phase section. The gain section provides locking of one FP mode to a seed source wavelength, while the phase modulator allows for adjusting the wavelength of the internal modes by tuning bias current to maintain mode-locking. This device counters any mode drifts caused by temperature variations, and allows for cooler-less operation over a wide range of currents. The devices and the performance metrics subsequently allow for a hybrid integration platform on a silicon substrate and integrate many functionalities like reflective modulator with thin film dielectric filter and receiver on a single chip for deployment at the user-end of future-proof low cost WDM-PONs.

This dissertation has three parts which are distinctive from the perspective of their frequency regime of operation and from the nature of their contributions to the science and engineering communities. The first part describes work that was conducted on a vertical-external-cavity surface emitting-laser (VECSEL) in the optical frequency regime. We designed, fabricated, and tested a hybrid distributed Bragg reflector (DBR) mirror for a VECSEL sub-cavity operating at the laser emission wavelength of 1057 nm. The DBR mirror was terminated with a highly reflecting gold surface and integrated with an engineered pattern of titanium. This hybrid mirror achieved a reduction in half of the number of DBR layer pairs in comparison to a previously reported, successful VECSEL chip. Moreover, the output power of our VECSEL chip was measured to be beyond 4.0Wwith an optical-to-optical efficiency of 19.4%. Excellent power output stability was demonstrated; a steady 1.0 W output at 15.0 W pump power was measured for over an hour. The second part reports on an ultrafast in situ pump-probing of the nonequlibrium dynamics of the gain medium of a VECSEL under mode-locked conditions. We proposed and successfully tested a novel approach to measure the response of the inverted carriers in the active region of a VECSEL device while it was operating under passively mode-locked conditions. We employed the dual-frequency-comb spectroscopy (DFCS) technique using an asynchronous optical sampling (ASOPS) method based on modified time-domain spectroscopy (TDS) to measure the nonequilibrium dynamics of the gain medium of a phase-locked VECSEL that we designed and fabricated to operate at the1030 nm emission wavelength. Our spectroscopic studies used a probe pulse of 100 fs and an in situ pump pulse of 13 ps. We probed the gain medium of the VECSEL and recorded a depletion time of 13 ps, a fast recovery period of 17 ps, and 110 ps for the slow recovery time. Our scans thus demonstrated a 140 ps full depletion-recovery cycle in the nonequilibrium state. The third part discusses work in the microwave and millimeter wave frequency regimes. A new method to fabricate Luneburg lenses was proposed and demonstrated. This type of lens is well known; it is versatile and has been used for many applications, including high power radars, satellite communications, and remote sensing systems. Because the fabrication of such a lens requires intricate and time consuming processes, we demonstrated the design, fabrication and testing of a Luneburg lens prototype using a 3-D printing rapid prototyping technique both at the X and Ka-V frequency bands. The measured results were in very good agreement with their simulated values. The fabricated X-band lens had a 12 cm diameter and produced a beam having a maximum gain of 20 dB and a beam directivity (half-power beam width (HPBW)) ranging from 12° to 19°). The corresponding Ka-V band lens had a 7 cm diameter; it produced a beam with a HPBW about the same as the X-band lens, but with a maximum gain of more than 20 dB.

The objective of this research is to develop a method to evaluate important weld dimensions in thin plates by using laser generated ultrasounds and EMAT receiver. The superimposed laser sources (SLS) technique is developed to generate narrowband Lamb waves with fixed wavelengths in thin plates. The method permits the flexibility of selecting desired wavelength. The signal processing procedure that combines wavenumber-frequency (k-w) domain filtering and synthetic phase tuning (SPT) is used to further reduce the complexity of Lamb waves. The k-w domain filtering technique helps to filter out the unwanted wave components traveling at the direction that is not of interest to us and the SPT technique is applied to amplify and isolate a particular Lamb wave mode. The signal processing procedure facilitates the calculation of reflection coefficients of Lamb waves that result from the presence of weld joints. The SLS and signal processing procedure are then applied to measure reflection coefficients in butt welds and lap welds. Two methods, the direct method and indirect method, are used to develop models that use reflection coefficients as predictors to predict these weld dimensions. The models developed in this research are shown to accurately predict weld dimensions in thin plates.