In recent years, even though the light output of GaN-related LED continues to increase, the brightness is still low compared to conventional lighting systems and it is necessary to further improve the light extraction of LEDs. In this study, we utilize the ZnO nanotip with aqueous solution and flip-chip technique to increase the light extraction of GaN LEDs. Electroluminescence (EL) and angular optical distribution are used to measure the light output intensity of LED. In the results, ZnO nanotip after thermal annealing with N2O ambiance decrease the ZnO defects. Flip-chip LED has higher light intensity ( 1.25 times) than conventional one in vertical emitting area ( at 0 angles). The enhancement of light output is duo to the reduction of light absorption from the metal contact and Fresnel¡¦s transmission losses. Finally, we fabricate a high brightness LED with above light enhancement design. EL intensity of LED is increased about 1.38 times than conventional one. Therefore, we can manufacture a LEDs array with above designs to obtain high light output for future solid-state illumination.

In recent years, even though the light output of GaN-related LED continues to increase, the brightness is still low compared to conventional lighting systems and it is necessary to further improve the light extraction of LEDs. In this study, the characteristics of LPD-SiO2 film and Al/SiO2/GaN MOS diode were investigated in advance of the formation of SiO2 micro structure for improving the oxide quality and controlling the deposition parameters. Temperature-difference method, post-annealing treatment, photochemical treatment, sulfurated treatment and etc. were used for the purposes of better properties of the MOS structure and the LED. To obtain higher light extraction efficiency of GaN LED, hemispherical SiO2 microlens was formed on the conventional and the flip-chip LEDs. The deposition mechanism had been developed to obtain the further improvements on the electrical and optical properties. The influences of epoxy encapsulation on the LEDs without and with microlens were also studied. Considering the refractive index of SiO2 is close to that of the epoxy, the enhancements of light extraction efficiency and angular optical distribution of GaN LED by using SiO2 microlens will be degraded after encapsulating. Therefore, we also tried to deposit ZnO film and rod on GaN LED by LPD method to maintain or further enhance the light extraction efficiency of GaN LEDs by the combining the micro structure and the epoxy encapsulation.

abstract: Current organic light emitting diodes (OLEDs) suffer from the low light extraction efficiency. In this thesis, novel OLED structures including photonic crystal, Fabry-Perot resonance cavity and hyperbolic metamaterials were numerically simulated and theoretically investigated. Finite-difference time-domain (FDTD) method was employed to numerically simulate the light extraction efficiency of various 3D OLED structures. With photonic crystal structures, a maximum of 30% extraction efficiency is achieved. A higher external quantum efficiency of 35% is derived after applying Fabry-Perot resonance cavity into OLEDs. Furthermore, different factors such as material properties, layer thicknesses and dipole polarizations and locations have been studied. Moreover, an upper limit for the light extraction efficiency of 80% is reached theoretically with perfect reflector and single dipole polarization and location. To elucidate the physical mechanism, transfer matrix method is introduced to calculate the spectral-hemispherical reflectance of the multilayer OLED structures. In addition, an attempt of using hyperbolic metamaterial in OLED has been made and resulted in 27% external quantum efficiency, due to the similar mechanism of wave interference as Fabry-Perot structure. The simulation and optimization methods and findings would facilitate the design of next generation, high-efficiency OLED devices. / Dissertation/Thesis / Masters Thesis Mechanical Engineering 2016

Microsized hexagonal gallium nitride pyramids show promise as next generation Light Emitting Diodes (LEDs) due to certain quantum properties within the pyramids. One metric for evaluating the efficiency of a LED device is by studying its Light Extraction Efficiency (LEE). To calculate the LEE for different pyramid designs, simulations can be performed using the FDTD method. Maximizing the LEE is treated as a black-box optimization problem with an interpolation method that utilizes radial basis functions. A simple heuristic is implemented and tested for various pyramid parameters. The LEE is shown to be highly dependent on the pyramid size, the source position and the polarization. Under certain circumstances, a LEE over 17% is found above the pyramid. The results are however in some situations very sensitive to the simulation parameters, leading to results not converging properly. Establishing convergence for all simulation evaluations must be done with further care. The results imply a high LEE for the pyramids is possible, which motivates the need for further research.

No description available.