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The influence of obstructions on the focal region field of a circular aperture focussing system.Whitford, Bradley Gordon. January 1967 (has links)
No description available.
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Fast Quantitative Microwave Imaging Based on Calibration MeasurementsTu, Sheng 11 1900 (has links)
This thesis contributes to the solution of the inverse electromagnetic (EM) scattering problems arising in microwave imaging. A calibration technique based on measurements of specific objects is proposed and a fast quantitative imaging method based on such measurements is developed.
The calibration measurements are performed on two known objects: the reference object representing the scatterer-free measurement and the calibration object representing a small scatterer embedded in the reference object. The inversion method does not need analytical or numerical approximations of the forward model as those are replaced by the measurement-based model. It is particularly valuable in short-range imaging, where analytical models of the incident field do not exist while the fidelity of the simulation models is often inadequate. In this thesis, it is demonstrated that the implementation of the calibration technique in the sensitivity-based imaging improves both the imaging efficiency as well as the image quality.
A quantitative imaging method is further developed based on the calibration measurements where a direct inversion in real space is employed. The electrical properties of dielectric objects are reconstructed using a resolvent kernel in the forward model, which is extracted from the calibration measurements. The experimentally determined resolvent kernel inherently includes the particulars of the measurement setup, including all transmitting and receiving antennas. The inversion is fast, allowing for quasi-real-time image reconstruction.
The theoretical limitations of the fast quantitative imaging method have been investigated and its performance with noisy data has been examined. It is found that the proposed method has limitations which are more flexible than those of the linear Born model. The method is also robust to random noise.
Both the calibration technique and the fast quantitative imaging method are validated through synthetic, simulation and/or experimental examples. The proposed concept of experimentally derived resolvent kernel in the forward model is general and may be valuable in other imaging modalities such as ultrasound, photonic imaging, electrical-impedance tomography, etc. / Dissertation / Doctor of Philosophy (PhD)
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Effect of microwave drying on paper propertiesKumar, Pawan January 1992 (has links)
No description available.
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Impedance transformers for advanced microwave circuits and antennasWu, Qiong Sen January 2018 (has links)
University of Macau / Faculty of Science and Technology. / Department of Electrical and Computer Engineering
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Efficient Microwave Susceptor Design for Wafer Bonding ApplicationsToossi, Amirali Unknown Date
No description available.
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III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs) /Song, Di. January 2007 (has links)
Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2007. / Includes bibliographical references. Also available in electronic version.
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Microwave coplanar waveguide tunable filters using RF MEMS /Mariani, Michael, January 1900 (has links)
Thesis (M.App.Sc.) - Carleton University, 2005. / Includes bibliographical references (p. 90-93). Also available in electronic format on the Internet.
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Direct optical control of a microwave phase shifter using GaAs field-effect transistorsRossek, Sacha J. January 1995 (has links)
The design and analysis of a novel optical-to-microwave transducer based upon direct optical control of microwave gallium arsenide (GaAs) field-effect transistor (FET) switches is the subject of this thesis. The switch is activated by illuminating the gate depletion region of the FET device with laser light having a photon energy and wavelength appropriate to the generation of free carriers (electron-hole pairs) within GaAs. The effects of light on the DC and microwave properties of the GaAs FET are explored and analyzed to permit the characterization of the switching performance and transient response of a reflective microwave switch. The switch is novel in that it utilizes direct optical control, whereby the optically controlled GaAs FET is directly in the path of the microwave signal and therefore relies on optically-induced variations in the microwave characteristics of the switch. This contrasts with previous forms of optically controlled switches which rely on indirect methods with the optical stimulus inducing variations in the DC characteristics of the GaAs FET, such that there is no direct interaction between the optically illuminated GaAs FET and the microwave signal. Measured and simulated results relating to the switching performance and transient response of the direct optically controlled microwave switch have been obtained and published as a result of this work. For the first time, good agreement is achieved between the measured and simulated results for the rise and fall times associated with the transient response of the gate photovoltaic effect in optically controlled GaAs FET switches. This confirms that the GaAs FET, when used as an optically controlled microwave switch, has a transient response of the order of several micro-seconds. An enhanced model of the GaAs FET switch has been developed, which represents a more versatile approach and leads to improved accuracy in predicting switching performance. This approach has been shown to be valid for both optical and electrical control of the GaAs FET. This approach can be used to model GaAs FET switches in discrete or packaged forms and predicts accurately the occurrence of resonances which may degrade the switch performance in both switching states. A novel method for tuning these resonances out of the switch operating band has been developed and published. This allows the switch to be configured to operate over the frequency range 1 to 20 GRz. The agreement between the models and measured data has been shown to hold for two very different GaAs FET structures. The results of the direct optically controlled microwave GaAs FET switch have been used as the basis for the design of a novel direct optically controlled microwave phase shifter circuit; Measured and simulated results are in good agreement and verify that the performance of the optically controlled phase shifter is comparable with previously published results for electrically controlled versions of the phase shifter. The 10 GRz phase shifter was optically controlled over a 1 GRz frequency range and exhibited a mid-band insertion loss of 0.15 dB. The outcome of the work provides the basis for directly controlling the phase of a microwave signal using the output of an optical sensor, with the GaAs FET acting as an optical-to-microwave transducer through a monolithic interface.
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Simulation, design and fabrication of microwave ferrite components for monostatic radar applications /Adams, Ryan Seamus. January 1900 (has links)
Thesis (Ph. D., Electrical Engineering)--University of Idaho, July 2007. / Major professor: Jeffrey L. Young. Includes bibliographical references (leaves 133-137). Also available online (PDF file) by subscription or by purchasing the individual file.
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Novel microwave magnetic and magnetoelectric composite materials and devices a thesis /Pettiford, Carl I. January 1900 (has links)
Thesis (Ph. D.)--Northeastern University, 2008. / Title from title page (viewed May 26, 2009). Graduate School of Engineering, Dept. of Electrical and Computer Engineering. Includes bibliographical references.
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