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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
21

CMOS-Prozessintegration von epitaktischen Selten-Erden-Oxiden als High-K-Dielektrika auf SOI-Substraten /

Gottlob, Heinrich Dieter Bernd, January 2008 (has links)
Zugl.: Aachen, Techn. Hochsch., Diss., 2007.
22

Entwicklung und Charakterisierung vertikaler Double-Gate-MOS-Feldeffekttransistoren

Trellenkamp, Stefan. Unknown Date (has links) (PDF)
Techn. Hochsch., Diss., 2003--Aachen.
23

Scaling of the ferroelectric field effect transistor and programming concepts for non-volatile memory applications

Fitsilis, Michael. Unknown Date (has links) (PDF)
Techn. Hochsch., Diss., 2005--Aachen.
24

CMOS low noise amplifier design for reconfigurable mobile terminals

Pienkowski, Dariusz Zbigniew. Unknown Date (has links) (PDF)
Techn. University, Diss., 2004--Berlin.
25

Síťový spínaný zdroj / Switch mode supply

Folprecht, Martin January 2017 (has links)
This master´s thesis describes switch mode power supply. The aim of this master´s thesis is the design and the construction of the switch mode power supply, which will be used as a laboratory tool.
26

Desenvolvimento de um sistema de medidas para estudos de efeitos de radiação em dispositivos eletrônicos: metodologias e estudos de casos / Development of a measurement system for research on radiation effects on electronic devices: metodologies and case studies

Aguiar, Vitor Ângelo Paulino de 06 June 2019 (has links)
Efeitos causados pela interação da radiação ionizante em dispositivos eletrônicos consis- tem numa preocupação crescente em diversos segmentos, como as aplicações aeroespaci- ais e em física de altas energias. Entre os efeitos de radiação induzidos por íons pesados estão os chamados de Efeitos de Eventos Isolados (Single Event Effects - SEE), em que o impacto de um único íon pode ser capaz de gerar um efeito observável, através da elevada deposição de energia e consequente geração de pares elétron-lacuna. O estudo destes efeitos requer um acelerador de partículas capaz de prover feixes uniformes de íons pesados com baixo fluxo. Neste trabalho, desenvolvemos um sistema para produ- ção de feixes de íons pesados para estudar SEE no Acelerador Pelletron 8UD, utilizando as técnicas de desfocalização e espalhamento múltiplo em folhas de ouro. O sistema foi projetado para prover feixes com intensidades entre 10 2 e 10 5 partículas/s/cm 2 com uniformidade maior que 90% numa área circular de diâmetro de 1,5 cm, operando em regime de alto-vácuo. Um manipulador de amostras permite a movimentação do dispo- sitivo sob teste com precisão de 2,5 m e um sistema de aquisição de dados dedicado foi desenvolvido, permitindo a automação de medidas. O sistema foi caracterizado com feixes de 1 H, 12 C, 16 O, 19 F, 28 Si, 35 Cl e 63 Cu a várias energias, apresentando fluxo e uni- formidade adequados aos experimentos em diversas configurações de focalização e folhas espalhadoras, e tem sido utilizado por diversos grupos de pesquisa. O novo sistema foi utilizado para estudar o efeito das camadas de isolamento e metalização na coleta de carga e geração de eventos observáveis em um dispositivo analógico e em um disposi- tivo digital, de modo a estabelecer metodologias de trabalho adequadas para estudos precisos de mecanismos de ocorrência de efeitos de radiação. O dispositivo analógico estudado foi um transistor p-MOS, onde o sinal de corrente induzido pelo impacto de íons diversos foi analisado de modo a obter a seção de choque de eventos e a cargaix gerada, permitindo determinar a espessura da camada de metalização em 1,28(2) m, e a camada de coleta de carga dependente do LET e alcance da partícula incidente, variando entre 6,0 e 11,0 m. O dispositivo digital estudado foi uma memória SRAM 28nm, onde foi observada uma forte dependência da seção de choque de eventos com a penetração do feixe no dispositivo. Associando as camadas de metalização e isolamento a um meio efetivo de interação, obteve-se que toda a área sensível do dispositivo só pode ser excitada, isto é, nela ocorrerem eventos observáveis, para partículas com alcance, no meio efetivo, entre 14 e 20 m, embora partículas com alcance de até 10 m sejam capazes de sensibilizar até 50% da área ativa do dispositivo. / Effects on electronic devices caused by interactions of ionizing radiation are a main concern in several fields, such as aerospace applications and high-energy physics. Among the heavy-ion induced radiation effects are the Single Event Effects, in which a strike of a single ion can be enough to generate an observable effect, as a result of the high energy deposition and thus electron-hole pairs generation. The study of these effects requires the use of uniform, low-flux particle beams. In this work, we developed a system for production of heavy ion beams for SEE studies at Pelletron 8UD accelerator, through the defocusing and multiple scattering in gold foil techniques. The setup can provide ion beams with intensities ranging from 10 2 e 10 5 particles/s/cm 2 with uniformity better than 90% in an circular area of 1.5 cm diameter, operating under high-vacuum. A sample manipulador allows device under test positioning with a precision of 2.5 m, and a dedicated data acquisition system was developed, allowing measurement automation. The system was characterized with 1 H, 12 C, 16 O, 19 F, 28 Si, 35 Cl and 63 Cu ion beams at several energies, presenting flux and uniformity adequate for SEE studies in many different configurations, and it is being used by several research groups. The new facility was used to study the effect of isolation and metalization layers in charge collection and observable events generation in an analog and in a digital device, in order to establish proper metodologies for precise studies of radiation effects mecanisms. The analog device studied was a p-MOS transitor, from which the heavy-ion impact induced current signal was analised to obtain cross-section and colected charge, allowing to determine metalization layer thickness to be 1.28(2) m, and charge collection dependency on particle LET and range, varying from 6.0 to 11.0 m. The digital device studied was a 28nm SRAM memory, where a strong dependency of cross-section with particle range in the device was observed. Associating to the metal and insulating layers an effectivexi medium, it was observed that the complete sensitive area can be excited only by particle with ranges in effective medium between 14 and 20 m, although particles with ranges up to 10 m are capable of sensibilizing up to 50% of devices active area.
27

Třífázový měnič pro synchronní servomotory / Three-phase converter for synchronous servomotors

Perout, Miroslav January 2020 (has links)
This diploma thesis is dealing with the design of a DC / AC converter for the control of PMSM motors. In the first step, the type of motor and the possibilities of sensing the position of the rotor are described. Subsequently, the power section is designed and the losses, heating, and approximate efficiency of the inverter are calculated. In the following step, the processor is selected and individual communication and protection circuits are designed. At the same time, control algorithms are analyzed. The last part is describing the implementation of the PCB and the inverter as a whole.
28

Theoretical Study of Short Channel Effects in Planar Bulk nMOS

Joseph, Thomas 23 May 2018 (has links)
Scaling has been pivotal in the success of the Moore's law. Using scaling techniques to improve the MOSFET comes at a risk of growing short channel effects. This publication deals with the theoretical study of impact of gate length scaling on planar bulk MOSFET. A systematical study shows that the impact of short channel effects like drain induced barrier lowering, subthreshold leakage, hot carrier generation and channel length modulation grows with gate length scaling. Thereby degrading the MOSFET performance. In addition to the numerical device simulation an analytical modelling of the device is also performed. Though the analytical model explains the device characteristic trends, it is found to be quantitative inaccurate in comparison to the numerical model especially when scaling below deep sub-micrometer regime.
29

Jednofázový pulzní měnič DC/AC s digitálním řízením / DC/AC inverter with digital control

Štaffa, Jan January 2009 (has links)
This work is focused on single phase inverters, which are used for the conversion of the direct current to the alternating current and are nowdays used especially in systems of back-up power supply. The specific aim of this work is implementation of design hight power circuit of inverter include calculation of control algorithm. It describes the complete solution of power circuit. Next step is a analysis of problems concerning the digital control with help of signal processor which is used for solution of regulator structure. Check of the design and checkout of control algorithm is made in the form of simulation in the MATLAB Simulink. Debugged program algorithm is subsequently implemented into the signal microprocessor. The work results rate estimation functionality of inverter and solution of control algorithm.
30

Ověřovací série rychlonabíječů pro olověné akumulátory 12V a 6V / Verification series of fast-chargers for lead-acid accumulators 12V and 6V

Benada, Tomáš January 2012 (has links)
This thesis is an engineering design of an intelligent fast-charger for lead-acid accumulators. It contains calculations of each component. The switching power supply is the mainstay of the charger that makes the charger portable, lightweight and small. The Intelligent fast-charger for lead-acid accumulators charges the accumulator by method of constant voltage with current limitation of 0,5A, 5A, 10A, 50A. 50A current is used in winter during starting of a car, when the battery can´t provide sufficient current. There are three LEDs placed on the front side of the charger reflecting status of the device. The device comprises safety protection for the charger, supply network and battery.

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