Neste trabalho e apresentado um estudo, via teoria de massa efetiva multibanda autoconsistente de heteroestruturas de semicondutores magnéticos diluídos, generalizada para incluir parâmetros de diferentes materiais. A interacao magnética e descrita por um modelo de campo médio baseado no mecanismo de troca indireta, com a possibilidade de inclusão de diferentes íons magnéticos. As equacoes de massa efetiva são resolvidas de forma autoconsistente com o auxílio da equacao de Poisson. As interacoes de spin-órbita e de troca-correlacao, na aproximacao de densidade local, são incluídas no cálculo. O método e aplicado para o estudo das estruturas de bandas e densidades de carga com separacao por spin do portador de heteroestruturas com dopagem tipo-n e tipo-p, variando a geometria dos pocos magnéticos e também o período da super-rede, as densidades de portadores e as concentracoes de íons magnéticos. Solucoes autoconsistentes da equacao de massa efetiva são encontradas para o oxido semicondutor (Zn,Co)O. Será mostrada a separacao de portadores por spin em funcao dos parâmetros variados, simulando diversas concentracoes possíveis, utilizadas em sistemas descritos na literatura, e será analisado o comportamento dos perfis de potencial. Usando os dados obtidos, um diagrama de fases será traçado com base na polarizacao total ou parcial dos portadores, e o seu comportamento será discutido. Também serão mostradas as estruturas de bandas, os perfis de potencial e as distribuicoes de carga do semicondutor (GaMn)As, variando as densidades de portadores e a direcao do campo magnético intrínseco, gerado pela dopagem com íons magnéticos. Os resultados obtidos neste trabalho podem servir de guia para futuras experiências e para o desenvolvimento de dispositivos com semicondutores magnéticos diluídos baseados em (Zn,Co)O e (Ga,Mn)As. Os métodos aqui descritos são gerais e podem ser utilizados para outros materiais. / This work presents a self-consistent multiband effective mass theory applied to diluted magnetic semiconductor heterostructures, generalized to include parameters of different ma- terials. The magnetic interaction is described by a mean-field approximation based on indirect- exchange mecanism, with the possibility of inclusion of different magnetic ions. The effective mass equations are solved self-consistently with the help of the Poisson equation. Spin-orbit and exchange-correlation interactions are included in the simulation in the local density appro- ximation. The method is used to study band structures and charge densities separated by spin in n- and p-type heterostructures. The magnetic well\'s geometry, the superlattice period, the carrier density and the magnetic ion concentration are changed. Self-consistent solutions of the effective mass equation are found for the semiconductor oxide (Zn,Co)O. Charge separation by spin will be show in function of the variation of the simulation parameters, simulating several ion concentrations and charge densities used in systems described in literature, and the potenti- als profiles will be analised. Using the data obtained a phase diagram will be plotted, based on the carrier total or partial carrier polarization, and a model for the behavior of the phase diagram will be discussed. It will also be shown band structures, potential profiles and charge densities of the (Ga,Mn)As semiconductor, varying it carrier density and the direction of the intrinsic magnetic field, generated by the magnetic ions that doped the heterostructure. The results ob- tained in this work can be used as a guide in future experiences and development of devices with diluted magnetic semiconductors based on (Zn,Co)O and (Ga,Mn)As. The methods here described are general and can be used for other materials.

Orientador: Pascoal J. G. Pagliuso / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-10T11:33:54Z (GMT). No. of bitstreams: 1 Iwamoto_WellingtonAkira_M.pdf: 1834376 bytes, checksum: f57724e8570a2064285943632257620b (MD5) Previous issue date: 2007 / Resumo: Semicondutores ferromagnéticos (FM) são compostos de grande interesse tecnológico devido à possibilidade de combinar suas cargas e o grau de liberdade de spin para produzir dispositivos eletrônicos. Em particular, filmes finos semicondutores dopados com metais de transição têm se tornado foco de intensa investigação científica desde a descoberta do ferromagnetismo com razoável temperatura de Curie [1] ¿[4]. Exemplos de semicondutores magnéticos diluídos (DMS) são os filmes finos de GaAs dopado com Mn e ZnO dopado Co. Nessa dissertação, nós apresentamos experimentos de Ressonância Paramagnética Eletrônica (EPR) e de susceptibilidade magnética para os filmes finos amorfos e cristalinos de GaAs dopados com Mn e filmes cristalinos de ZnO dopados com Co, com a finalidade de explorar as propriedades magnéticas globais e locais nesses DMS. Para todos os filmes amorfos de GaAs dopados com Mn, os nossos resultados indicaram a ausência de qualquer ordenamento ferromagnético entre as temperaturas 300 > T > 2 K ao contrário dos filmes cristalinos que foi observado ferromagnetismo em T < 110 K. Além do mais, observamos nas medidas de EPR uma única linha associada aos íons localizados de Mn 2+ para os filmes finos amorfos de GaAs dopados com Mn e g ~ 2,01, o qual se manteve inalterado com a temperatura. Para nossos filmes cristalinos de GaAs foram observados modos ferromagnéticos para T < TC. Alguns filmes amorfos de GaAs dopado com Mn, foram hidrogenados e, para estes, encontramos que dopagem de hidrogênio, torna o filme mais cristalino, e que sua influência nas propriedades magnéticas é somente causada pela sua variação no grau de cristalinidade. Para os filmes cristalinos de ZnO dopado com Co, os experimentos de EPR mostraram que somente para os filmes com concentração de 10 % de Co um modo ferromagnético pôde ser observado. E através de medidas de magnetização foi observada uma magnetização de saturação máxima MS ~ 1,1 µB/Co para o filme com concentração de 10 % de Co, sendo que a magnetização decresce para concentrações maiores de Co. Isso indica que o loop ferromagnético encontrado nos filmes não pode estar associado a simples precipitação de Co. Uma comparação entre as propriedades magnéticas do filmes de 10 % de Co e da possível fase espúria, ZnCo2O4, mostraram propriedades magnéticas dos filmes de ZnO dopado com Co não parecem estar associados com esta fase / Abstract: Ferromagnetic semiconductors (FM) are compounds of technological interest due to the possibility of combining their charge and spin degrees of freedom when producing electronic devices. In particular, semiconductor thin films doped with transition metal have become focus of intense scientific investigation since ferromagnetism with reasonably high Curie temperatures (racing from few Kelvin to room temperature) was found in theses films [1-4]. Examples of such dilute magnetic semiconductor (DMS) are Mn-doped GaAs and Co-doped ZnO thin films. ZnO is a direct bandgap II-VI semiconductor with a wurtzite-type structure. In this word, we have performed studies of EPR and magnetic susceptibility in Co-doped ZnO and Mn-doped GaAs thin films in order to further explore the global and local magnetic properties of these intriguing DMS. For the Mn-doped GaAs samples, our results show the absence of ferromagnetic ordering for the amorphous films in the 300 > T > 2 K temperature range, in contrast to the ferromagnetism found in crystalline films for TC< 110 K. A single EPR line with a temperature independent g-value (g ~ 2) is observed for the amorphous films and the behavior of this ESR linewidth depends on the level of crystallinity of the film. For the Mn-doped GaAs crystalline films, only a ferromagnetic mode is observed for T < TCwhen the film is ferromagnetic. Regarding the effect of H-doping in the properties of Mn-doped GaAs amorphous films, the Mn 2+ ESR line was found to be nearly unaffected by the presence of hydrogen apart of slightly linewidth changes induced by the changes in the film crystallinity. Hydrogen doping has no direct effects in the magnetic properties of Mn-doped GaAs films. For the Co-based films, the ESR experiments show that only the Zn0,90Co0,10 O film presented a strong anisotropic FMR. The magnetization data show that ~ 10% of Co-doped ZnO films produce the maximum Ms ~ 1,1 µB/Co in the series. The absence of FMR for films with higher Co Concentration indicates that the observed FM loops cannot be associated with simply precipitation of pure Co ions, but more work needs to be done to complete rule out the contribution of other magnetic secondary phases / Mestrado / Física da Matéria Condensada / Mestre em Física

Neste trabalho investigamos pela primeira vez flutuações dependentes de spin em correntes eletrônicas polarizadas através de estruturas magnéticas. Nosso sistema físico consiste de uma heteroestrutura com tunelamento ressonante formada por um poço ou \"ponto\" quântico contendo Mn, confinado entre duas barreiras de potencial. Usamos um modelo semiclássico baseado em equações de taxa para calcular as ocupações dos estados ressonantes up e down. Estas equações são derivadas de uma equação mestra que descreve a probabilidade de ocupação dos estados de spin em um dado tempo. Funções correlação corrente-corrente são expressas em termos das funções correlação hop-hop (associadas à transições entre os níveis ressonantes up e down) e o shot noise dependente de spin é determinado em termos da matriz variância do sistema, também derivada da equação mestra. Quando consideramos um feixe polarizado e tempos distintos (&#964 &#8593 &#8595 &#8800 &#964 &#8595 &#8593), podemos obter ambas \"correlações positivas\" (&#8249 &#916 &#8593 &#916 &#8595 &#8250 &#8805 0) e/ou \"negativas\" (&#8249 &#916 &#8593 &#916 &#8595 &#8250 &#8804 0) no nosso modelo. A generalização e reinterpretação do modelo de ilhas nos possibilitou (i) investigar flutuações dependentes de spin em correntes polarizadas; (ii) observar aumento e atenuação do shot noise; (iii) verificar que processos de \"spin-flip\" com (&#964 &#8593 &#8595 &#8800 &#964 &#8595 &#8593) são relevantes na atenuação do shot noise e (iv) verificar que o ruído contém informações sobre o processo de \"spin-flip\" / In this work we investigate for the first time spin-dependent fluctuations in spin-polarized electronic currents through magnetic structures. Our physical model consists of a resonant-tunneling heterostructure formed by a Mn-based quantum well or \"point\", confined between a double-barrier potential. We used a semiclassical model based on rate equations to calculate the occupations of the spin-up and spindown resonant states. These equations are derived from a master equation describing the probability of occupation of the spin states at a given time. Current-current correlation functions are expressed in terms of hop-hop correlation functions (for hops between islands representing the up and down states) and the spin-dependent shoi noise is determined in terms of the variance matrix of the system; also derived from the master equation. When we consider a polarized beam and distinctive times (&#964 &#8593 &#8595 &#8800 &#964 &#8595 &#8593), we can obtain both \"positive correlations\" (&#8249 &#916 &#8593 &#916 &#8595 &#8250 &#8805 0) and \"negative correlations\" (&#8249 &#916 &#8593 &#916 &#8595 &#8250 &#8804 0) in our model. The generalization and reinterpretation of the island model allowed us (i) to investigate spin-dependent fluctuations in spinpolarized electronic currents; (ii) to observe enhancement and suppression of shot noise; (iii) to verify that spin-flip processes with (&#964 &#8593 &#8595 &#8800 &#964 &#8595 &#8593) are relevant to shotnoise suppression and (iv) to verify that noise contains information about spin-flip processes

Investigation of spin dynamics in hybrid structures based on ferromagnetic semi- conductor (Ga,Mn)As Abstract: This dissertation deals with the study of hybrid ferromagnet/semiconductor structures, which are of particular for spintronics. We focused on heterostructures that contain ferromagnetic semiconductor (Ga,Mn)As, which is the most studied model ma- terial from the group of diluted magnetic semiconductors. The main goal of this work was a detailed study of the Optical Spin Transfer Torque (OSTT) phenomenon, which is an optical equivalent of the STT effect, which is used in ferromagnetic metal layers for non-thermal switching of the direction of magnetization. In the first part of the work, we describe experiments aimed at achieving non-thermal control of the direction of mag- netization in (Ga,Mn)As with the contribution of control of magnetic anisotropy using mechanical strain induced by a piezo-transducer (PZT) in hybrid structure (Ga,Mn)As/GaAs/PZT. For this purpose, the preparation of the structure was first opti- mized, which was tested in detail by means of X-ray diffraction and magneto-optical methods. However, we were unable to achieve magnetization switching due to the OSTT phenomenon. In addition, we found that the results measured at low temperature are very poorly reproducible, despite...

No description available.

Polycrystalline Zn1-xCrxO (0.01 ≤ x ≤ 0.09) samples synthesized by solid state reaction technique were sintered at different temperatures following slow step sintering schedule. Structural, micro-structural, optical, magnetic properties and homogeneity were investigated using suitable characterisation techniques. Cr2O3 and CrO2 phases have been detected in the XRD patterns and Raman spectra of Zn1-xCrxO samples with x ≥ 0.05. Photoluminescence study has indicated improved optical property of the samples compared to undoped ZnO. While low percentage Cr doped samples showed diamagnetic behaviour, higher percentage doped samples (≥ 5%) exhibited ferromagnetic, paramagnetic and anti-ferromagnetic behaviours depending upon the sintering temperatures. The magnetic properties have been analysed through Electron Spin Resonance study. A g-value of 1.97 indicates Cr in +3 valence state in doped ZnO system. Presence of Cr3+ and Cr4+ in ZnO is understood to facilitate super exchange interactions to promote ferromagnetism at room temperature. ESR study shows improved magnetic homogeneity achieved by slow step sintering process. / Physics / M. Sc. (Physics)

Research on spintronics has galvanized the design of new devices that exploit the electronic spin in order to augment the performance of current microelectronic technologies. The sucessful implementation of these devices is largely contingent on a quantitative understanding of nonequilibrium magnetism in conducting ferromagnets. This thesis is largely devoted to expanding the microscopic theory of magnetization relaxation and current-induced spin torques in transition metals ferromagnets as well as in (III,Mn)V dilute magnetic semiconductors. We start with two theoretical studies of the Gilbert damping in electric equilibrium, which treat disorder exactly and include atomic-scale spatial inhomogeneities of the exchange field. These studies enable us to critically review the accuracy of the conventional expressions used to evaluate the Gilbert damping in transition metals. We follow by generalizing the calculation of the Gilbert damping to current-carrying steady states. We find that the magnetization relaxation changes in presence of an electric current. We connect this change with the non-adiabatic spin transfer torque parameter, which is an elusive yet potentially important quantity of nonequilibrium magnetism. This connection culminates in a concise analytical expression that will lead to the first ab initio estimates of the non-adiabatic spin transfer torque in real materials. Subsequently we predict that in gyrotropic ferromagnets the magnetic anisotropy can be altered by a dc current. In these systems spin-orbit coupling, broken inversion symmetry and chirality conspire to yield current-induced spin torques even for uniform magnetic textures. We thus demonstrate that a transport current can switch the magnetization of strained (Ga,Mn)As. This thesis concludes with the transfer of some fundamental ideas from nonequilibrium magnetism into the realm of superconductors, which may be viewed as easy-plane ferromagnets in the particle-hole space. We emphasize on the analogies between nonequilibrium magnetism and superconductivity, which have thus far been studied as completely separate disciplines. Our approach foreshadows potentially new effects in superconductors. / text

A investigação das propriedades ópticas e sua relação com as propriedades magnéticas dos semicondutores é de grande interesse para a comunidade científica, em virtude da enorme demanda por novas tecnologias e funcionalidades que podem surgir dessas pesquisas. Os calcógenos de európio são semicondutores intrinsecamente magnéticos, transparentes na região visível do espectro eletromagnético e integráveis em matrizes de silício e nitreto de gálio, sendo assim fortes candidatos a aplicações tecnológicas envolvendo magnetismo e óptica. Neste trabalho são investigados os espectros de absorção e fotoluminescência dos calcógenos de európio, com base no modelo 4f -> 5d(\'t IND. 2g\') da transição óptica de dipolo elétrico, o qual mostrou-se totalmente adequado para a descrição da absorção óptica nos calcógenos de európio em função do campo magnético aplicado, explicando a presença de linhas de absorção estreitas e dicróicas nos espectros em campo alto e a forma larga dos espectros de absorção em campo nulo. Nos espectros de fotoluminescência do EuTe, entretanto, foram detectados estados eletrônicos não contemplados pelo modelo 4f -> 5d(\'t IND. 2g\') , em especial uma banda de emissão denominada \'MX IND. 0\', acoplada a modos vibracionais da rede. Uma linha zero-fônon correspondente a uma transição que não produz fônons pôde ser bem definida e a partir do deslocamento dessa linha em função do campo magnético foi possível detectar inequivocamente a formação de polarons magnéticos no EuTe pela primeira vez; o raio polarônico foi estimado como R = 3.6a, onde a é o parâmetro de rede e a energia de ligação desse polaron foi estimada em \'E IND. p\' = 45 meV, um resultado que foi confirmado através de medidas do deslocamento da linha zero-fônon em função da temperatura. Adicionalmente procurou-se identificar o estado eletrônico associado à emissão \'MX IND. 0\': a partir de medidas da intensidade da fotoluminescência em função da potência de excitação foi possível sugerir que a emissão \'MX IND. 0\' provem de estados eletrônicos ligados a defeitos da rede e foi possível estimar a concentração desses defeitos como menor que 0.1 ppm. / Investigation of optical properties and their relation to magnetic properties of semiconductors is of great interest to scientific community, due to the large demand for new technologies and features that can arise from these studies. Europium chalcogenides are intrinsically magnetic semiconductors, transparent in the visible region of electromagnetic spectrum and integrable into silicon and gallium nitride matrices, beeing strong candidates for technological applications involving magnetism and optics. The present study investigates absorption and photoluminescence spectra of europium chalcogenides, based on the 4f -> 5d(t2g) model of the electric dipole optical transition, which proved to be entirely appropriate to describe polarized optical absorption in europium chalcogenides as a function of magnetic field, explaining the presence of narrow dichroic lines at high fields and the broad shape of the zero-field absorption spectrum. However, in photoluminescence spectra of EuTe, electronic states not covered by the 4f -> 5d(t2g) model were detected, in particular an emission band labeled MX0, which is coupled to vibrational modes of the lattice. A transition without production of phonons, corresponding to a zero-phonon line, could be well resolved and from the displacement of the zero-phonon line as a function of magnetic field the formation of magnetic polarons in EuTe could be detected unambiguously for the first time. The polaronic radius is estimated as R = 3:6a, where a is the lattice parameter, and the polaron binding energy is estimated as Ep = 45 meV, a result that was confirmed by measurements of zero-phonon line displacement as a function of temperature. Additionally, we sought to identify the electronic state associated with MX0 emission: from measurements of the photoluminescence intensity as a function of excitation power, it was possible to suggest that MX0 emission comes from an electronic state coupled to lattice defects of low concentration, which we estimate to be of less than 0.1 ppm.

O presente trabalho teve como objetivo utilizar a técnica nuclear de Correlação Angular &gamma;-&gamma; Perturbada (CAP) para a medida de interações hiperfinas em filmes finos e amostras em pó de óxidos semicondutores SnO2 e TiO2 puros e dopados com metais de transição para uma investigação sistemática de defeitos estruturais e do magnetismo sob o ponto de vista atômico tendo como principal motivação a candidatura à aplicação desses óxidos em spintrônica. O trabalho também teve como foco a preparação e caracterização das amostras por meio de técnicas convencionais, como difração de raios X, microscopia eletrônica de varredura, espectroscopia de energia dispersiva e medidas de magnetização. Amostras puras dos filmes foram medidas mediante a variação sistemática da temperatura de tratamento térmico e do campo magnético aplicado. Tais medidas foram realizadas no HISKP, na Universidade de Bonn (Rheinische Friedrich-Wilhelms-Universität Bonn), através de implantação de íons de 111In(111Cd) ou 181Hf(181Ta); no IPEN, por sua vez, essas medidas foram realizadas após a difusão dos mesmos núcleos de prova. Outra parte das medidas CAP foram feitas através de implantação de íons de 111mCd(111Cd) e 117Cd(117In) no Isotope Mass Separator On-Line (ISOLDE) do Centre Européen Recherche Nucléaire (CERN). As medidas foram realizadas nos intervalos de temperatura de 8 K a 1173 K. Para análise de ferromagnetismo, medidas foram feitas à temperatura ambiente com e sem aplicação de campo magnético externo. Após a comparação dos resultados das medidas macroscópicas e atômicas das amostras, foi possível concluir que há uma correlação entre os defeitos, o magnetismo e a mobilidade dos portadores de carga nos semicondutores aqui estudados. Um passo adiante na busca de semicondutores, cujo ordenamento magnético possibilite o seu uso na eletrônica baseada em spin. Alguns resultados já foram publicados, incluindo resultados obtidos na Universidade de Bonn durante o período de doutorado sanduíche [1-7]. / This study aimed the use of nuclear technique Perturbed &gamma;-&gamma; Angular Correlation Spectroccopy (PAC) to measure the hyperfine interactions in thin films and powder samples of SnO2 and TiO2 pure and doped with transition metals to obtain a systematic investigation of defects and magnetism from an atomic point of view with the main motivation the application in spintronics. The work also focused on the preparation and characterization of samples by conventional techniques such as X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and magnetization measurements. Pure samples of the films were measured by the systematic variation of thermal treatment and applied magnetic field. These measurements were performed in HISKP at the University of Bonn (Rheinische Friedrich-Wilhelms-Universität Bonn) using 111In(111Cd) or 181Hf (181Ta); at IPEN, in turn, these measurements were performed after the diffusion of the same probe nuclei. Another part of PAC measurements were carried out using 111mCd(111Cd) and 117Cd (117In) in Isotope Mass Separator On-Line (ISOLDE) at Centre Européen Recherche Nucléaire (CERN). The measurements were performed from 8 K to 1173 K. After comparing results from macroscopic techniques with those from PAC, it was concluded that there is a correlation between the defects, magnetism and the mobility of charge carriers in semiconductors studied here. A step forward in the search for semiconductors, whose magnetic ordering allows its use in electronics based on spin. Some results have been published, including results obtained at the University of Bonn for the sandwich doctorate period [1-7].

FePt/B4C multilayer thin films are deposited on silicon substrates using magnetron sputtering with different B4C layer thickness. Experimental results suggest that the B4C layers effectively serve as spacers to separate the FePt layers, making the multilayer configuration stable even after film annealing at elevated temperatures. On the other hand, B and C are found to be incorporated into the FePt layer, which is responsible for the FePt grain growth confinement and grain separation, and eventually affects the properties of the composite film. Based on the experimental results of multilayer composite film, particle (FePt)/matrix (B4C) monolayer composite thin films on Si substrate are synthesized, in which a record coercivity of 2200 Oe is achieved compared to similar system. The size uniformity of the FePt nanoparticles, the well-defined particle-particle separation, together with the good magnetic property and high temperature thermal stability of the overall composite film, make it a very promising candidate for the ultrahigh density magnetic storage media. / Functional nanostructures serve as the basic building blocks for nanodevices and significant efforts have been devoted to their morphology control and properties optimization. In present study, four functional nanostructures, i.e., FePt/B4C multilayer composite film, particle (FePt)/matrix (B4C) monolayer composite film, Ga-doped ZnO nanowire arrays, and CdSe nanotube arrays are designed, synthesized and characterized in detail, in which the first two are expected to be prominent candidates for ultrahigh-density magnetic storage media while the later two have potential applications in solar energy conversion. / Semiconductor based one-dimensional nanostructures are investigated as promising building blocks for solar energy conversion devices. Two aspects are explored, aiming at increasing the energy conversion efficiency, i.e., facilitating electron transport and enhancing photon absorbing. In the first case, large area Ga-doped ZnO nanowire arrays are grown on transparent conducting substrate. Experimental results reveal the well-aligned array morphology and the uniform Ga concentration in these nanowires. In particular, direct I-V measurements performed on single nanowire-on-ITO substrate disclose its Ohmic contact with the conducting substrate and the significant conductivity improvement compared to undoped ZnO nanowire, In the second case, a novel synthesis strategy for nanotube arrays is developed and CdSe is used for demonstration, which material possessing more appropriate band gap as effective light harvester compared to that of materials for existing semiconductor nanotube arrays. The controllable tube wall thickness that can be increased until continuous CdSe porous network is obtained. The experimental results suggest a nanotube array formation mechanism that can be generally applied to a wide range of materials. / Zhou, Minjie = 功能纳米结构在磁性和能源方面的应用 / 周民杰. / Adviser: Li Quan. / Source: Dissertation Abstracts International, Volume: 72-11, Section: B, page: . / Thesis (Ph.D.)--Chinese University of Hong Kong, 2009. / Includes bibliographical references (leaves 91-100). / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Electronic reproduction. [Ann Arbor, MI] : ProQuest Information and Learning, [201-] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Abstract also in Chinese. / Zhou, Minjie = Gong neng na mi jie gou zai ci xing he neng yuan fang mian de ying yong / Zhou Minjie.