<p dir="ltr">This work introduces an innovative algorithm for co-simulating time-dependent Drift Diffusion (DD) equations with Maxwell\textquotesingle s equations to characterize semiconductor devices. Traditionally, the DD equations, derived from the Boltzmann transport equations, are used alongside Poisson\textquotesingle s equation to model electronic carriers in semiconductors. While DD equations coupled with Poisson\textquotesingle s equation underpin commercial TCAD software for micron-scale device simulation, they are limited by electrostatic assumptions and fail to capture time dependent high-frequency effects. Maxwell\textquotesingle s equations are fundamental to classical electrodynamics, enabling the prediction of electrical performance across frequency range crucial to advanced device fabrication and design. However, their integration with DD equations has not been studied thoroughly. The proposed method advances current simulation techniques by introducing a new broadband patch-based method to solve time-domain 3-D Maxwell\textquotesingle s equations and integrating it with the solution of DD equations. This technique is free of the low-frequency breakdown issues prevalent in conventional full-wave simulations. Meanwhile, it enables large-scale simulations with reduced computational complexity. This work extends the simulation to encompass the complete device, including metal contacts and interconnects. Thus, it captures the entire electromagnetic behavior, which is especially critical in electrically larger systems and high-frequency scenarios. The electromagnetic interactions of the device with its contacts and interconnects are investigated, providing insights into performance at the chip level. Validation through numerical experiments and comparison with results from commercial TCAD tools confirm the effectiveness of the proposed method. </p>