Doctor of Philosophy / Department of Chemistry / Takashi Ito / This dissertation describes the fabrication and characterization of nanoscale structures in commercially available polymers via multiphoton ablation and bottom-up self assembly techniques. High-resolution surface imaging techniques, such as atomic force microscopy (AFM) and chemical force microscopy (CFM) were used to characterize the physical features and chemical properties, respectively, of these nanoscale structures. Fabrication using both top-down and bottom-up methods affords flexibility in that top-down allows random, user-defined patterning whereas bottom-up self assembly produces truly nanoscale (1-100nm) uniform features. Multiphoton induced laser ablation, a top-down method, was used to produce random sub-micron scale features in films of poly(methylmethacrylate) (PMMA), polystyrene (PS), poly(butylmethacrylate) (PBMA) and poly[2-(3-thienyl)ethyloxy-4-butylsulfonate] (PTEBS). Features with 120-nm lateral resolution were obtained in a PMMA film which was concluded to be the best polymer for use with this method. It was also found that etching resolution was highest for polymers having high glass transition temperatures, low molecular weights and no visible absorption. Bottom-up self assembly of polystyrene-poly (methylmethacrylate) (PS-b-PMMA) diblock copolymer and UV/acetic acid treatment produced nanoscale cylindrical domains supported by a substrate. AFM imaging at the free surface showed metastable vertical PMMA domain orientation on gold substrates. In contrast, horizontal orientation was obtained on oxide-coated silicon regardless of surface roughness and annealing conditions. The horizontal domain orientation on silicon substrates was ideal to probe simultaneously the difference in surface charge and hydrophilicity of the two distinct nanoscale domains of UV/AcOH treated PS-b-PMMA films. CFM on UV/acetic acid etched PS-b-PMMA revealed the presence of –COO- groups which were found to be more abundant inside the etched trenches than on the unetched PS matrix as shown by ferritin adsorption onto etched PS-b-PMMA. Lastly, the PS-b-PMMA was cast as a free-standing monolith at the end of a quartz micropipette. AFM revealed circular PMMA dots at the free surface, indicating alignment parallel to the long axis of capillary. Ion conductance within nanochannels indicated surface –charge governed ion transport at low KCl concentrations and flux of negatively-charged sulphorhodamine dye demonstrated the permselective nature of nanochannels.

<p dir="ltr">This work introduces an innovative algorithm for co-simulating time-dependent Drift Diffusion (DD) equations with Maxwell\textquotesingle s equations to characterize semiconductor devices. Traditionally, the DD equations, derived from the Boltzmann transport equations, are used alongside Poisson\textquotesingle s equation to model electronic carriers in semiconductors. While DD equations coupled with Poisson\textquotesingle s equation underpin commercial TCAD software for micron-scale device simulation, they are limited by electrostatic assumptions and fail to capture time dependent high-frequency effects. Maxwell\textquotesingle s equations are fundamental to classical electrodynamics, enabling the prediction of electrical performance across frequency range crucial to advanced device fabrication and design. However, their integration with DD equations has not been studied thoroughly. The proposed method advances current simulation techniques by introducing a new broadband patch-based method to solve time-domain 3-D Maxwell\textquotesingle s equations and integrating it with the solution of DD equations. This technique is free of the low-frequency breakdown issues prevalent in conventional full-wave simulations. Meanwhile, it enables large-scale simulations with reduced computational complexity. This work extends the simulation to encompass the complete device, including metal contacts and interconnects. Thus, it captures the entire electromagnetic behavior, which is especially critical in electrically larger systems and high-frequency scenarios. The electromagnetic interactions of the device with its contacts and interconnects are investigated, providing insights into performance at the chip level. Validation through numerical experiments and comparison with results from commercial TCAD tools confirm the effectiveness of the proposed method. </p>

Electrospun nanofibers have been researched extensively in the culturing of stem cells to understand their behavior since electrospun fibers mimic the native extracellular matrix (ECM) in many types of mammalian tissues. Here, electrospun nanofibers with defined structure (orientation/alignment) and pore size could significantly modulate human mesenchymal stem cell (hMSC) behavior. Controlling the fiber membrane pore size was predominantly influenced by the duration of electrospinning, while the alignment of the fiber membrane was determined by parallel electrode collector design. Electric field simulation data provided information on the electrostatic interactions in this electrospinning apparatus.hMSCs on small-sized pores (~3-10 µm²) tended to promote the cytoplasmic retention of Yes-associated protein (YAP), while larger pores (~30-45 µm²) promoted the nuclear activation of YAP. hMSCs also displayed architecture-mediated behavior, as the cells aligned along with the fiber membranes orientation. Additionally, fiber membranes affected nuclear size and shape, indicating changes in cytoskeletal tension, which coincided with YAP activity. The mechanistic understanding of hMSC behavior on defined nanofiber structures seeks to advance their translation into more clinical settings and increase biomanufacturing efficiencies.