Technology where a solitary dopant acts as the active component of an opto-electronic device is an emerging  field known as solotronics, and bears the promise to revolutionize the way in which information is stored, processed and transmitted. Magnetic doped semiconductors and in particular (Ga, Mn)As, the archetype of dilute magnetic semiconductors, and topological insulators (TIs), a new phase of quantum matter with unconventional characteristics, are two classes of quantum materials that have the potential to advance spin-electronics technology. The quest to understand and control, at the atomic level, how a few magnetic atoms precisely positioned in a complex environment respond to external stimuli, is the red thread that connects these two quantum materials in the research presented here. The goal of the thesis is in part to elucidate the properties of transition metal (TM) impurities near the surface of GaAs semiconductors with focus on their response to local magnetic and electric fields, as well as to investigate the real-time dynamics of their localized spins. Our theoretical analysis, based on density functional theory (DFT) and using tight-binding (TB) models, addresses the mid-gap electronic structure, the local density of states (LDOS) and the magnetic anisotropy energy of individual Mn and Fe impurities near the (110) surface of GaAs. We investigate the effect of a magnetic field on the Mn acceptor LDOS measured in cross-sectional scanning tunneling microscopy, and provide an explanation of why the experimental LDOS images depend weakly on the field direction despite the strongly anisotropic nature of the Mn acceptor wavefunction. We also investigate the effects of a local electrostatic field generated by nearby charged As vacancies, on individual and pairs of ferromagnetically coupled magnetic dopants near the surface of GaAs, providing a means to control electrically the exchange interaction of Mn pairs. Finally, using the mixed quantum-classical scheme for spin dynamics, we calculate explicitly the time evolution of the Mn spin and its bound acceptor, and analyze the dynamic interaction between pairs of ferromagnetically coupled magnetic impurities in a nanoscaled semiconductor. The second part of the thesis deals with the theoretical investigation of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of Bi2Se3 TI, using an approach that combines DFT and TB calculations. Our analysis clarifies the crucial role played by the spatial overlap and the quasi-resonant coupling between the Mn-acceptor and the topological surface states inside the Bi2Se3 band gap, in the opening of a gap at the Dirac point. Strong electronic correlations are also found to contribute significantly to the mechanism leading to the gap, since they control the hybridization between the p orbitals of nearest-neighbor Se atoms and the acceptor spin-polarization. Our results explain the effects of inversion-symmetry and time-reversal symmetry breaking on the electronic states in the vicinity of the Dirac point, and contribute to clarifying the origin of surface-ferromagnetism in TIs. The promising potential of magnetic-doped TIs accentuates the importance of our contribution to the understanding of the interplay between magnetic order and topological protected surface states.

Le travail de thèse est consacré à la synthèse, l’élaboration et à l’étude des propriétés physiques d’une famille d’oxydes semi-conducteurs BiVO4 sous formes de nanostructures et de films minces incluant un dopage métallique (Metal = Cu, Mo et Ag) dans le but de réaliser des photocatalyseurs efficaces sous irradiation en lumière visible. La synthèse de nanopoudres dopées a ainsi été effectuée par la technique de broyage planétaire à haute énergie ainsi que par la méthode sol-gel. Les matériaux obtenus et les effets de dopage ont été étudiés sur les caractéristiques structurales, électroniques et optiques. En conjuguant des études par XPS, Raman et RPE, nous avons montré que le dopage substitutionnel est effectivement réalisé pour les ions (Cu, Mo) localisés dans les sites cristallins des ions vanadium alors que le dopage par l’élément Ag contribue à former des clusters métalliques localisés à la surface de nanoparticules de BiVO4 formant ainsi des nanocomposites. Les réactions photocatalytiques ont été étudiées par la dégradation de colorants organiques (Acide bleu 113, méthyle orange (MO)) dans des solutions faiblement concentrées. Parmi les ions dopants substitués dans les matrices hôtes, le dopage au cuivre (Cu2+) a montré de meilleures performances en raison d'une augmentation de la densité de charges photo-générées et de la conductivité électrique par rapport au cas du dopage au molybdène. Pour le dopage à l’argent, la formation de clusters métalliques donnent lieu à des effets de résonances plasmoniques qui améliorent l'efficacité photocatlytique à un niveau équivalent à celui du dopage substitutionnel au cuivre. La deuxième contribution de ce travail a porté sur la réalisation par pulvérisation cathodique rf-magnétron de films minces BiVO4 dopés par des éléments Mo et Cu dans des conditions définies par l'atmosphère de dépôt à base de pressions partielles d’un gaz Ar ou d’un mélange Ar / O2 et des températures de substrats variables jusqu'à 450 ° C. Les paramètres optimaux de dépôt ont été identifiés pour réaliser des films cristallins à faible rugosité de surfaces ou à morphologies en nano-îlots. Des études photocatalytiques utilisant des films minces dopés ont été effectuées par la dégradation des colorants organiques (MO) sous rayonnement visible. Ces études montrent que la morphologie des films avec des surfaces spécifiques importante est aussi un facteur d’amplification des performances photocatalytiques des films minces dopés Me-BiVO4. / The thesis work is devoted to the synthesis and investigations of the physical properties of a family of semiconducting oxides based on BiVO4 as nanostructures or thin films including a metal doping (Metal = Cu, Mo and Ag) in order to achieve effective photocatalysts under visible light irradiation. The synthesis of doped nanopowders was carried out by the techniques of high-energy ball milling and sol-gel. The resulting materials and doping effects were characterized on the structural, electronic and optical properties. By combining XPS, Raman and EPR studies, it was shown that the substitutional doping is achieved for the doping ions (Cu, Mo) being located in the lattice sites of the vanadium ions. Oppositely, Ag doping contributes to form Ag metal clusters located on the surface of nanoparticles of BiVO4 thereby forming nanocomposites. Photocatalytic reactions were studied by the degradation of organic dyes (Acid Blue 113, methyl orange (MO)) in low concentrated solutions. Among the doping ions substituted in the host matrices, Cu2+ showed better photocatalytic performances because of an increase in the density of photo-generated charges and similar effect on the electrical conductivity compared to the case of Mo doping. In the Ag based nanocomposites, the formation of metal clusters seems to induce surface resonance plasmonic effects that improve the efficiency of photocatalytic reactions with respect to the activity demonstrated for substitutional doping. The second contribution of the thesis work was devoted to BiVO4 thin films deposition by rf sputtering process with Mo and Cu doping under defined synthesis conditions such as the partial pressures of Ar gas or an Ar / O2 mixture and varying the substrate temperatures up to 450 ° C. The optimal deposition parameters have been identified to achieve crystalline films with low roughness surface or alternatively with nano-islands morphologies. Photocatalytic studies using doped thin films were carried out through the degradation of organic dyes (MO) under visible light irradiation. The performed measurements show that the film morphology with high specific surface is also a key factor in the amplification of photocatalytic reactions in metal doped thin films.