Global ETD Search

61	Hot-carrier-induced instabilities in n-mosfet's with thermally nitrided oxide as gate dielectric 馬志堅, Ma, Zhi-jian. January 1992 (has links) published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy Hot carriers. Nitric oxide.
62	Scaling limits and opportunities of double-gate MOSFETS Chen, Qiang 05 1900 (has links) No description available. Transistor circuits
63	A large-signal model for the RF power MOSFET Bordelon, John H. 05 1900 (has links) No description available. Electronic circuit design
64	Distributed-channel bipolar device : experimentation, analytical modeling and applications Jiang, Fenglai January 1994 (has links) Thesis (Ph. D.)--University of Hawaii at Manoa, 1994. / Includes bibliographical references (leaves 593-597). / Microfiche. / 2 v. (xliii, 597 leaves), bound ill. 29 cm Bipolar transistors
65	Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress Aminzadeh, Payman G. 18 June 1993 (has links) Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage for maximum degradation is found to be different than the gate voltage for which the substrate current is maximum; this is in contrast to the results of previous workers who found degradation and substrate current to be strongly correlated. However, under normal operating conditions, degradation and substrate current are found to be correlated. Furthermore, through the use of charge pumping measurements it is shown that two primary mechanisms are accountable for the degradation of these devices at small and large gate voltages. First, at large gate voltages there is an increase in the degradation which is predominantly due to electron injection and trapping in the oxide. An alternating static injection experiment shows that this type of electron trapping degradation is recoverable. Second, at small gate voltages degradation is mainly related to interface state generation near the drain LDD region. Floating gate measurements demonstrate that electron and hole injection occurs at large and small gate voltages, respectively. It is also shown that maximum interface state creation occurs when electron and hole injection happens simultaneously. / Graduation date: 1994 Hot carriers
66	Gate capacitance as a monitor for studying MOS transistor degradation by electrical stressing / Kiat, Ah Lian. Unknown Date (has links) Thesis (MEng)--University of South Australia, 1995 Metal oxide semiconductors.
67	MOSFET RF characterization using bulk and SOI CMOS technologies / Saijets, Jan. January 1900 (has links) (PDF) Thesis (doctoral)--Helsinki University of Technology, 2007. / Includes bibliographical references (p. 161-171). Also available on the World Wide Web.
68	The degradation and time-dependent breakdown of p-type MOSFETS with a high-k dielectric / Yust, Brian. January 1900 (has links) Thesis (M.S.)--Texas State University-San Marcos, 2008. / Vita. Includes bibliographical references (leaf 77). Also available on microfilm.
69	A procedure to verify the accuracy of delivery of prescribed radiation doses in radiotherapy : a thesis submitted in partial fulfilment of the requirements for the degree of Master of Science in Medical Physics in the University of Canterbury / Peszynski, R. I. January 2008 (has links) Thesis (M. Sc.)--University of Canterbury, 2008. / Typescript (photocopy). Includes bibliographical references (p. 87-89). Also available via the World Wide Web.
70	A charge based power MOSFET model / Budihardjo, Irwan Kukuh. January 1995 (has links) Thesis (Ph. D.)--University of Washington, 1995. / Vita. Includes bibliographical references (leaves [80]-83).

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