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Applications of stress from boron doping and other challenges in silicon technologyRandell, Heather Eve. January 2005 (has links)
Thesis (M.S.)--University of Florida, 2005. / Title from title page of source document. Document formatted into pages; contains 139 pages. Includes vita. Includes bibliographical references.
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The effects of silicon, nitrogen and oxygen incorporation and oxygen-scavenging technique on performances of hafnium-based gate dielectric MOSFETsChoi, Changhwan. January 1900 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.
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Double gate MOSFET technology and applications /Lin, Xinnan. January 2007 (has links)
Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2007. / Includes bibliographical references (leaves 79-82). Also available in electronic version.
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Semiclassical Monte Carlo simulation of nano-scaled semiconductor devicesGhosh, Bahniman, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.
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Characteristics of N-channel accumulation mode thin film polysilicon mosfets. /Tamjidi, Mohammad R., January 1987 (has links)
Thesis (M.S.)--Oregon Graduate Center, 1987.
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A micro processor based A.C. drive with a Mosfet inverterBaird, John Malcolm Edward January 1991 (has links)
Thesis (Masters Diploma (Electrical
Engineering)--Cape Technikon, Cape Town,1991 / A detailed study into the development of a three phase motor
drive, inverter and microprocessor controller using a scalar
control method. No mathematical modelling of the system was
done as the drive was built around available technology.
The inverter circuit is of a Vo~tage source inverter
configuration whicp uses MOSFETs switching at a base frequency
of between 1.2 KHz and 2 KHz.
Provision has been made for speed control and dynamic braking
for special applications, since the drive is not going to be
put into a specific application as yet, it was felt that only
a basic control should be implemented and space should be left
for special requests from prospective customers.
The pulses for the inverter are generated from the HEF 4752
I.e. under the control of the micro processor thus giving the
processor full control over the inverter and allowing it to
change almost any parameter at any time.
Although the report might seem to cover a lot of unimportant
ground it is imperative that the reader is supplied with the
back-ground information in order to understand where A.e.
drives failed in the past and where A.e. drives are heading in
the future. As well as where this drive seeks to use available
technology to the best advantage.
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Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelementeVorster, Adriaan 20 February 2014 (has links)
M.Ing. (Electrical and Electronic Engineering) / This thesis covers the development of the Mosmatrix, a high speed, high power switch which is implemented with an array of mosfet switching elements. The switching performance of the Mosmatrix proves that is is possible to employ existing semiconductor technology to switch pulses of 1,5 Joule, several hundred Ampere at several kilovolt, in the microsecond and sub-microsecond regime. The switch has demonstrated rates of current rise in the order of lOkA per J.1s during tumon without the use of tum-on snubbers (magnetic assist) . The rate of current fall during tum-off has been of the same magnitude. No other switch has demonstrated this level of repetitive current interrupt ability. The work covers the properties, switching requirements anc' switching performance of mosfet switching elements as well as the development of an isolated drive circuit.
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High power Mosfet characteristic and applicationsLin, Yeong Ren 01 April 2001 (has links)
No description available.
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Fabrication modeling and reliability of novel architecture and novel materials based MOSFET devicesDey, Sagnik. January 1900 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.
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Scaling opportunities for bulk accumulation and inversion MOSFETs for gigascale integrationMurali, Raghunath. January 2004 (has links) (PDF)
Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2004. / Hess, Dennis, Committee Member; Meindl, James, Committee Chair; Allen, Phillip, Committee Member; Cressler, John, Committee Member; Davis, Jeffrey, Committee Member. Vita. Includes bibliographical references (leaves 108-119).
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