The research into materials for use as cathode materials for solid oxide fuel cells (SOFC) is ongoing, with many different avenues being investigated. Copper based delafossites were studied for cathode side applications in SOFCs, as a novel and comparatively cheap material. The aim was to identify suitable materials with appropriate electrical conductivity, thermal, chemical and mechanical stability in air. Furthermore, understanding the behaviour of the delafossites during the thermal oxidation to spinel and copper oxide would be beneficial to further development of the materials. The structure and properties of the copper based delafossites CuFeO₂, CuAlO₂ and CuCrO₂ were studied, alongside several doped compositions for each parent composition. The electronic conductivity of the CuFeO₂ family was improved by doping fluorine into the structure, with 1 atomic % doping producing ~3.8 S cm⁻¹ at 800 °C. However, as reported in literature the structure is vulnerable to oxidation at higher temperatures. In contrast, CuAlO₂ was stable over the SOFC temperature range, and therefore had appropriate thermal expansion coefficients (TEC) of ~11 x 10⁻⁶ K⁻¹, but relatively low electronic conductivity. CuCrO₂ compositions had good overall TECs, but aliovalent doping of Mg²⁺ improved the conductivity to ~17.1 S cm⁻¹ at 800°C for 2.5 atomic % doped CuCrO₂. Neutron diffraction was utilised to study members of the solid solution CuFe₁₋ₓCrₓO₂ (x = 0, 0.25 and 0.5) during in-situ oxidation at high temperature. Points of positive scattering density were identified within the CuFeO₂ structure, which were attributed to the location of the intercalated oxygen ions before the transformation proceeded. Additionally, the cation distribution between the tetrahedral and octahedral sites within the developing spinel were characterised for x = 0, and partially for the x = 0.25 and 0.5 compositions using complimentary XRD patterns. Finally, magnesium doped CuCrO₂ delafossites were used in several different preliminary symmetrical cells for study using electrochemical impedance spectroscopy (EIS). Pure delafossite inks gave relatively large area specific resistance (ASR) values, 1.29 - 2.69 Ω cm² at 800 °C. It was attempted to improve upon these values through infiltration of CeO₂ and through change in microstructure using composite type inks, without much success. Inks using CuCr₀.₈Fe₀.₂O₂ were also tested as both a single phase electrode and as a composite type electrode. The pure delafossite electrode still had a large ASR value, (~33.4 Ω cm² at 800 °C) while composite electrodes obtained much more respectable ASR values ~0.75 Ω cm² at 800 °C.

Semiconducting properties and related defect disorder for well defined TiO2 single crystal were studies. Semiconducting properties have been determined using simultaneous measurements of two independent electrical properties, including electrical conductivity, ??, and thermoelectric power, S, at elevated temperatures (1073-1323 K) in the gas phase of controlled oxygen activity (10-10 Pa &lt p(O2) &lt 75 kPa). Measurements of s and S were conducted (i) in the gas/solid equilibrium and (ii) during equilibration. Oxygen vacancies have been identified as the predominant defects in TiO2 over a wide range of p(O2). Individual conductivity components related to electrons, electron holes and ions, were determined from the obtained ?? data. The effect of p(O2) on these individual components was considered in the form of a diagram. This work led to the discovery of the formation and diffusion of Ti vacancies. However, the obtained diffusion data indicate that, in the temperature ranges commonly used in studies of semiconducting properties (1000-1400K), the Ti vacancies concentration is quenched and may thus be assumed constant. In addition it was shown that Ti vacancies in appreciable concentrations form only during prolonged oxidation. It was determined that the discrepancies in the reported n-p transition point are related to the concentration and spectrum of impurities as well as the concentration of Ti vacancies. It has been shown that the n-p transition point in high-purity TiO2 is determined by the Ti vacancy concentration. A well defined chemical diffusion coefficient, Dchem, was determined using kinetic data obtained during equilibration. A complex relationship between p(O2) and Dchem was observed. These data showed a good agreement between the obtained diffusion data and defect disorder. Examination of the determined equilibration kinetics, led to the discovery of two kinetic regimes, the result of the transport of defects at different mobilities. The determined data are considered well defined due to the following reasons: 1. The studied specimen was of exceptionally high purity and free of grain boundaries (single crystal) 2. The specimen was studied in the gas phase of controlled and well defined oxygen activity which was continuously monitored. 3. Whenever the experimental data were measured in equilibrium, the gas/solid equilibrium has been verified experimentally. 4. A good agreement between the two, self-confirmatory, electrical properties, including ?? and S has been determined simultaneously and independently. The defect disorder model derived in the present work may be used for tailoring controlled semiconducting properties through the selection of annealing conditions involving the temperature and oxygen activity.

Semiconducting properties and related defect disorder for well defined TiO2 single crystal were studies. Semiconducting properties have been determined using simultaneous measurements of two independent electrical properties, including electrical conductivity, ??, and thermoelectric power, S, at elevated temperatures (1073-1323 K) in the gas phase of controlled oxygen activity (10-10 Pa &lt p(O2) &lt 75 kPa). Measurements of s and S were conducted (i) in the gas/solid equilibrium and (ii) during equilibration. Oxygen vacancies have been identified as the predominant defects in TiO2 over a wide range of p(O2). Individual conductivity components related to electrons, electron holes and ions, were determined from the obtained ?? data. The effect of p(O2) on these individual components was considered in the form of a diagram. This work led to the discovery of the formation and diffusion of Ti vacancies. However, the obtained diffusion data indicate that, in the temperature ranges commonly used in studies of semiconducting properties (1000-1400K), the Ti vacancies concentration is quenched and may thus be assumed constant. In addition it was shown that Ti vacancies in appreciable concentrations form only during prolonged oxidation. It was determined that the discrepancies in the reported n-p transition point are related to the concentration and spectrum of impurities as well as the concentration of Ti vacancies. It has been shown that the n-p transition point in high-purity TiO2 is determined by the Ti vacancy concentration. A well defined chemical diffusion coefficient, Dchem, was determined using kinetic data obtained during equilibration. A complex relationship between p(O2) and Dchem was observed. These data showed a good agreement between the obtained diffusion data and defect disorder. Examination of the determined equilibration kinetics, led to the discovery of two kinetic regimes, the result of the transport of defects at different mobilities. The determined data are considered well defined due to the following reasons: 1. The studied specimen was of exceptionally high purity and free of grain boundaries (single crystal) 2. The specimen was studied in the gas phase of controlled and well defined oxygen activity which was continuously monitored. 3. Whenever the experimental data were measured in equilibrium, the gas/solid equilibrium has been verified experimentally. 4. A good agreement between the two, self-confirmatory, electrical properties, including ?? and S has been determined simultaneously and independently. The defect disorder model derived in the present work may be used for tailoring controlled semiconducting properties through the selection of annealing conditions involving the temperature and oxygen activity.

A thesis submitted in ful lment of the requirements for the degree Doctor of Philosophy in Electrical Engineering May 2016 / Modern electrical networks provide an opportunity for inevitable interaction between metal oxide arresters and power system harmonics. Therefore, these arrester devices are continuously exposed to the combined e ect of distorted system voltage and envi- ronmental thermal stresses. Recent studies supported by eld experiments have shown signi cant rise in the leakage current through these surge arrester devices when exposed to ac voltage with harmonics. However, the major shortcoming in the current knowledge and applications of varistor arresters resides on the reliability and the electrical stabil- ity of these overvoltage protection units, when subjected to long-term and continuous distorted ac voltage and thermal stresses from the environment. Commercially-sourced ZnO arresters of similar size and electrical properties are tested using standard ac accelerated degradation procedure or electro-thermal ageing test. The times to degradation, the coe cient of non-linearity, the reference voltages, as well as the clamping voltage measured are used to analyse the reliability and the electrical stability of the metal oxide-based arrester samples. The resistive component of the leakage current is extracted from the measured total leakage current. The three-parameter Weibull probability model is invoked in order to analyze the degradation phenomenon. / MT2016

Solution processed circuits are expected to be the main components to achieve low cost, large area, flexible electronics. However, the commercialization of solution processed flexible electronics face several challenges. The passive component such as capacitors are limited in frequency range and operating voltage. The active component such as transistors suffer from low mobility ultimately leading to limited current-carrying capacity. Just as in traditional silicon technology, the fabrication process and material choices significantly impact the performance of the fabricated devices. My thesis focuses on the optimization of the performance of printed capacitors and transistors through investigation of several aspects of the device structure and fabrication process. The first part of this work focuses on the optimization of printed nanoparticle/polymer composite capacitors. Thin film metal oxide nanoparticle/polymer composites have enormous potential to achieve printable high-k dielectrics. The combination of high-k ceramic nanoparticle and polymer enables room temperature deposition of high dielectric constant film without the need of high temperature sintering process. The polymer matrix host fills the packing voids left behind by the nanoparticles resulting to higher effective dielectric permittivity as a system and suppresses surface states leading to reduced dielectric loss. Such composite systems have been employed in a number of flexible electronic applications such as the dielectrics in capacitors and thin film transistors. One of the most important properties of thin film capacitors is the breakdown field. In a typical capacitor system, the breakdown process leads to catastrophic failure that destroys the capacitor; however, in a nanoparticle/polymer composite system with self-healing property, the point of breakdown is not well-defined. The breakdown of the dielectric or electrodes in the system limits the leakage observed. It is possible, however, to define a voltage/field tolerance. Field tolerance is defined as the highest practical field at which the device stays operational with low failure rate by qualifying the devices with defined leakage current density. In my work, the optimization of the field tolerance of (Ba,Sr)TiO₃ (BST)/parylene-C composite capacitors is achieved by studying the influence of the electromigration parameter on leakage and field strength through the inherit asymmetrical structure of the fabricated capacitors. One approach to creating these composites is to use a spin-coated nanoparticle film together with vapor deposited polymers, which can yield high performance, but also forms a structurally asymmetric device. The performance of a nanoparticle BST/parylene-C composite capacitor is compared to that of a nanoparticle BST capacitor without the polymer layer under both directions of bias. The composite device shows a five orders of magnitude improvement in the leakage current under positive bias of the bottom electrode relative to the pure-particle device, and four orders of magnitude improvement when the top electrode is positively biased. The voltage tolerance of the device is also improved, and it is asymmetric (44 V vs. 28 V in bottom and top positive bias, respectively). This study demonstrates the advantage of this class of composite device construction, but also shows that proper application of the device bias in this type of asymmetrical system can yield an additional benefit. The dependence of the field tolerance of nanoparticle/polymer composite capacitors on the electromigration parameter of the electrodes is investigated using the symmetrical dielectric system. The breakdown is suppressed by selecting the polarity used in nanoparticle (Ba,Sr)TiO₃/parylene-C composite film-based capacitors. Metals including gold, silver, copper, chromium, and aluminum with comparable surface conditions were examined as the electrodes. The asymmetric silver, aluminum, gold, copper, and chromium electrode devices show a 64 %, 29 %, 28 %, 17 %, 33 %, improvement in the effective maximum operating field, respectively, when comparing bias polarity. The field at which filament formation is observed shows a clear dependence on the electromigration properties of the electrode material and demonstrates that use of electromigration resistant metal electrodes offers an additional route to improving the performance of capacitors using this nanoparticle/polymer composite architecture. The second part of my thesis focuses on the novel pneumatic printing process that enables manipulation of the crystal growth of the organic semiconductors to achieve oriented crystal with high mobility. Small molecule organic semiconductors are attracting immense attention as the active material for the large-area flexible electronics due to their solution processability, mechanical flexibility, and potential for high performance. However, the ability to rapidly pattern and deposit multiple materials and control the thin-film morphology are significant challenges facing industrial scale production. A novel and simple pneumatic nozzle printing approach is developed to control the crystallization of organic thin-films and deposit multiple materials with wide range of viscosity including on the same substrate. Pneumatic printing uses capillary action between the nozzle and substrate combined with control of air pressure to dispense the solution from a dispense tip with a reservoir. Orientation and size of the crystals is controlled by tuning the printing direction, speed, and the temperature of the substrate. The main advantages of pneumatic printing technique are 1) simple setup and process, 2) multi-material layered deposition applicable to wide range of solution viscosity, 3) control over crystal growth. The manipulation of crystal growth will be discussed in the next chapter. This method for performance optimization and patterning has great potential for advancing printed electronics. The dependence of the mobility of printed thin film 6,13-bis(triisopropylsilylethynyl) pentacene [TIPS-pentacene] and C8-BTBT on printing conditions is investigated, and the result indicates that the formation of well-ordered crystals occurs at an optimal head translation speed. A maximum mobility of 0.75 cm²/(Vs) is achieved with 0.3 mm/s printing speed and 1.3 cm²/(Vs) with 0.3 mm/s printing speed at 50C for TIPS-pentacene and C8-BTBT respectively. In summary, pneumatic printing technique can be an attractive route to industrial scale large area flexible electronics fabrication.

Functional materials, particularly metal oxides, have been the focus of much attention in solid state chemistry for many years and impact every aspect of modern life. The approach adopted in this thesis to access desirable functionality for enhanced fundamental understanding is via modifying existing materials by deploying reducing synthetic procedures. This work spans several groups of inorganic crystalline materials, but is unified by the development of new properties within host compounds of particular relevance to solid oxide fuel cell technology, which allow interstitial oxide ion conduction at elevated temperatures. The Ca₁₂Al₁₄O₃₂e₂ electride was successfully synthesized by replacing the mobile extra-framework oxygen ions with electrons acting as anions. The high concentration of electrons in the C12A7 electride gives rise to an exceptionally high electronic conductivity of up to 245 S cm⁻¹ at room temperature. Making use of the high density of electrons in Ca₁₂Al₁₄O₃₂e₂ electride, the strong N-N bonds in N₂ was found to be broken when heating Ca₁₂Al₁₄O₃₂e₂ in a N₂ atmosphere. A reaction between silicate apatites and the titanium metal yielded another completely new electride material La₉.₀Sr₁.₀(SiO₄)₆O₂.₄e₀.₂ which was found to be a semiconductor. To fully understand the role of oxygen interstitials in silicate apatites, high-resolution transmission electron microscopy (HRTEM) was employed as the main technique in probing how the oxygen nonstoichiometry is accommodated at the atomic level. Atomic-resolution imaging of interstitial oxygen in La₉.₀Sr₁.₀(SiO₄)₆O₂.₅ proved to be a success in this thesis. Substitution of oxygen in 2a and interstitial sites with fluoride ions in La[subscript(8+y)]Sr[subscript(2- z)](SiO₄)₆O[subscript(2+(3y-2z)/2)] (0<y<2, 0<z<2) could be an approach to enriching the functionalities in the apatite structure. A wide range of fluoride substitution levels was tolerated in La[subscript(10-x)]Sr[subscript(x)](SiO₄)₆O[subscript(3-1.5x)]F[subscript(2x)] (x= 0.67, 1, 1.5, 2) and AC impedance measurements were found in support of a tentative conclusion that fluoride ions could be mobile in fluorinated apatites. The last part of this thesis was focused on a new class of fast oxide ion conductors based on Ge₅P₆O₂₅ whose performance was superior to both La₉.₀Sr₁.₀(SiO₄)₆O₂.₅ and Ca₁₂Al₁₄O₃₃ in the low temperature range.