<p> A method for the measurement of the microwave conductivity of a semiconductor subjected to a high electric field is described, which provides for varying angles between the microwave and applied electric field vectors. The results of measurements on 10 ohm-em. n-type germanium at 9.522 GHz with applied electric fields up to 3KV/cm are given. </p> <p> The measurements show that the microwave conductivity is controlled by the differential carrier mobility (∂V/∂E) for the condition of microwave and applied electric field vectors parallel. For the case of the fields at right angles the microwave conductivity is controlled by a carrier mobility intermediate between the d. c. mobility (v/B) and the differential mobility (∂V/∂E). </p> <p> Theoretical expressions for the performance of a proposed "Hot Electron Microwave Rotator" are developed. </p> / Thesis / Master of Engineering (MEngr)

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第20815号 / 工博第4419号 / 新制||工||1687(附属図書館) / 京都大学大学院工学研究科分子工学専攻 / (主査)教授 関 修平, 教授 佐藤 啓文, 教授 梶 弘典 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DGAM