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1	Characterisation and modelling of Heterostructure Bipolar Junction Transistors Holder, David John January 1991 (has links) No description available. 621.3192 Microwave transistors
2	The modelling and measurement of noise in microwave FET oscillators Bunting, Jeremy January 1987 (has links) No description available. 621.3192 Microwave transistors
3	Optimum design of broadband microwave transistor amplifiers Yasui, Eishi. January 1981 (has links) Thesis (M.S.)--Ohio University, March, 1981. / Title from PDF t.p.
4	Calculation of the maximum frequency of oscillation for microwave heterojunction bipolar transistors Laser, Allan Paul January 1990 (has links) An investigation into various methods of calculation of the high frequency performance parameter f[formula omitted] for microwave heterojunction bipolar transistors is presented. Two high frequency representations of the device are developed: equivalent circuits consisting entirely of lumped circuit elements, and a two-port network based on drift-diffusion equations. Proper account is taken in these representations of the phase delay associated with carrier transit time through the base and base-collector space charge region. Also included are the charging time effects due to the various parasitic circuit elements associated with actual devices. A single-sided isolated structure is used in simulations and it is found that both representations yield remarkably similar characteristics for the behavior of unilateral gain U with frequency. For devices in which the dominant factors limiting high frequency performance are the parasitic resistances and capacitances, it is found that U rolls off at 6 dB/octave through the region where U = 1 and the values predicted for f[formula omitted] via these two methods, as well as via the widely-used analytical expression involving f[formula omitted] and (R[formula omitted]C[formula omitted])[formula omitted], are in agreement. However, when the periods of the oscillations are on the order of the carrier transit times, and the device parasitics are sufficiently low so as to not limit performance, resonance effects occur in U in the region where U = 1 and the prediction of f[formula omitted] obtained via the two equivalent circuit approaches deviates markedly from the predictions of the analytical expression. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate Microwave transistors Bipolar transistors
5	Broadband guided microwave and millimeter wave transitions and their applications. / 宽带微波毫米波传输线转换器及其应用 / CUHK electronic theses & dissertations collection / Kuan dai wei bo hao mi bo chuan shu xian zhuan huan qi ji qi ying yong January 2011 (has links) Huang, Xiaobo. / Thesis (Ph.D.)--Chinese University of Hong Kong, 2011. / Includes bibliographical references (leaves 108-111). / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Abstract also in Chinese. Microwave transistors Millimeter wave devices
6	III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs) / Song, Di. January 2007 (has links) Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2007. / Includes bibliographical references. Also available in electronic version.
7	Research on improvement of breakdown voltage of AlGaN/GaN HEMTs grown on Si(111) substrates by MOCVD / Wang, Yong. January 2009 (has links) Includes bibliographical references.
8	Fabrication and characterization of MOCVD grown AIInAs/GaInAs high electron mobility transistors / Ng, Kai Lun. January 2010 (has links) Includes bibliographical references (p. 46-51).
9	AlGaN/GaN high electron mobility transistors on silicon substrate for RF/microwave applications / Jia, Shuo. January 2005 (has links) Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2005. / Includes bibliographical references. Also available in electronic version.
10	RF circuit applications of enhancement-mode AlGaN/GaN HEMTs / Wu, Yichao. January 2007 (has links) Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2007. / Includes bibliographical references. Also available in electronic version.

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