The Gallium Arsenide Field Effect transistor (GaAs FET) is experiencing a widespread acceptance in space and terrestrial systems due to its low noise, high gain and frequency characteristics unmatched by bipolar devices. This paper describes a design of a 4 GHz low noise amplifier with GaAs FETs using the scattering parameters method. Special attention is given to overall noise/gain optimization in the band of interest. The Smith Chart is used extensively to match the two-port device with microstrip networks. Analysis and performance of the amplifier are presented.

Thesis (Ph.D.) -- Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004. / Includes bibliographical references (leaves 74-82). Also available in electronic version. Access restricted to campus users.

No description available.

Thesis (M. S.)--Florida State University, 2005. / Advisor: Dr. Mark H. Weatherspoon, Florida State University, College of Engineering, Dept. of Electrical and Computer Engineering. Title and description from dissertation home page (viewed Sept. 19, 2005). Document formatted into pages; contains viii, 70 pages. Includes bibliographical references.

This doctoral thesis is focused on problems of modulators based on six-ports. It begins with description of current state of the art of six-ports used like modulators, their transfer functions and SIW technology. A design part of this thesis consists from experimental six-port based on substrate integrated waveguide (SIW) technology. There is presented step-by-step development of this six-port using this technology and also there is introduced micro-strip technology based six-port. Final design of six-ports and variable impedances were measured, the results are discussed and compared with expected ones in next chapters. Second part of this thesis deals with influences of internal parameters of six-ports to final signal transmission and derives theirs transfer functions for more than one reflection in structure. The computation results are compared with experimental measurements for fixed loads. With using of ideal loads sweeps, modulations with shaped input signals were calculated. For designed variables impedances, there was founded the optimal biasing points for demanded IQ diagram and discussed which from tested active circuit is suitable. In the last part there are shown results of experiment with these variable loads connected to both types of designed six-ports.