i Abstract: This doctoral thesis is dedicated to the study of magnetization dynamics in ferromagnetic semiconductor (Ga,Mn)As using magneto-optical (MO) spectroscopy methods. The character of the magnetization dynamics after the impact of the laser pulse was investigated under different experimental conditions in an extensive set of optimized (Ga,Mn)As samples with Mn doping ranging from 1.5% to 14%. The thorough analysis of the measured MO signal enabled us to develop a new method that can be used to determine the laser pulse-induced real-space magnetization trajectory without any numerical modelling. Moreover, the investigation of the measured MO signals allowed us to determine the basic micromagnetic properties of (Ga,Mn)As, such as the magnetic anisotropy, the Gilbert damping or the spin stiffness. In addition to this, we found out that the light-induced magnetization precession can be caused by three distinct mechanisms - the sample heating due to the energy transfer from the laser pulses, the angular momentum transfer from the circularly polarized photons, and the influence of the non-equilibrium hole polarization induced by the relativistic spin-orbit interaction. The first of these mechanisms is rather well known but the two remaining ones, which are the optical analogues of the spin-transfer torque...

Domain wall dynamics is the one of the most interesting topics in the field of Spintronics because of its potential applications in the development of memory devices. These studies of dynamics are particularly focused on dilute magnetic semiconductors (DMS) or ferromagnetic semiconductors, which are believed to be one of the future materials for Spintronics devices. Despite the fact that the Curie temperature of these DMS is still lower than room temperature the knowledge gained in this study can be applicable to other DMS systems and will unravel new phenomena for the dynamic behavior of domain walls. In this work the dynamic behavior of magnetic domain walls in (Ga, Mn) (As, P) nanometric layers was studied. This was achieved with the use of longitudinal Kerr microscopy working at cryogenic temperature. The domain wall displacements were measured with the application of high enough magnetic fields for very short durations at two different temperatures. These magnetic fields were applied with the help of homemade microcoils used for the first time in this kind of study on DMS. A comparison is shown with the previous results obtained on the same material with a different magnetic anisotropy. The results show very high domain wall velocities for this type of material, not reported previously. The velocity curves clearly show two distinct regions with different mobilities. Finally quantitative analyses are presented to explain these velocities.

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Nesta tese, analisamos dois sistemas de semicondutores magnéticos: um semicondutor magnético cristalino de EuTe e uma heteroestrutura formada por um poço quântico de GaAs/AlGaAs ao lado uma barreira tipo delta de Mn, que, ao difundir-se, forma o semicondutor magnético diluído de (Ga,Mn)As. Nossos estudos foram focados na possibilidade de manipularmos oticamente a orientação magnética de ambos os sistemas. No semicondutor magnético de EuTe, a indução de magnetização se dá pela formação de polarons magnéticos ao redor de elétrons fotoexcitados. Para o estudo dos polarons, um modelo teórico elaborado foi adaptado para a construção de um sistema computacional baseado no método de Monte Carlo. Essa sistema permitiu o cálculo do momento magnético e do raio do polaron em temperaturas finitas, muito acima da temperatura de Néel. O modelo foi elaborado para reproduzir tanto as propriedades do EuTe sem o polaron (temperatura de Néel e campo crítico), quanto o deslocamento da linha de fotoluminescência devido a formação do polaron. Além do desenvolvimento do próprio método computacional, que pode ser utilizado para estudar outros sistemas, o conhecimento adquirido com o estudo do EuTe serviu como base para o estudo de um sistema mais complexo, que é a heteroestrutura de GaAs/AlGaAs + dMn. O estudo da heteroestrutura de GaAs/AlGaAs + dMn foi feito em cima de medidas experimentais de rotação de Kerr com resolução temporal. O sistema de medição construído permite, também, medidas de rotação de Kerr com resolução espacial, que servem para o estudo de transporte e hélice de spin em semicondutores, e está detalhadamente descrito em um dos capítulo desta tese. Na amostra estudada, o controle da magnetização dos íons de Mn é feito através da interação de troca com o elétron fotoexcitado no poço quântico. Os resultados obtidos das medidas de rotação de Kerr mostram uma frequência de precessão dependente do tempo, que revela a existência de dois processos com dinâmicas diferentes: uma primeira orientação do spin dos íons de Mn devido à polarização do par elétron-buraco no poço quântico, seguida por um realinhamento desses spins com o campo magnético externo, a partir do momento em que a coerência dos spins dos buracos desaparece. Esse resultado sugere que a interação entre os elétrons fotoexcitados e os íons de Mn ocorre por intermédio dos buracos fotoexcitados, ao contrário do que havia sido proposto em estudos anteriores de estruturas similares, mas de acordo com o modelo de interação sp-d, utilizado para explicar o ferromagnetismo do (Ga,Mn)As. / In this thesis we analyzed two magnetic semiconductor systems: one intrinsic magnetic semiconductor crystal of EuTe and one GaAs-based heterostructure with a GaAs/AlGaAs quantum well close to delta-type Mn barrier, that forms a diluted magnetic semiconductor of (Ga,Mn)As after diffusion. Our studies on both systems were focused on the possibility of optical manipulation of magnetic order. In EuTe pure semiconductor, the magnetization control occurs due to de formation od magnetic polarons around photo-excited electrons. To study magnetic polarons we adapted a theoretical model to build a computer simulation system based on Monte Carlo\'s method. This system allowed us to calculate the magnetic moment and radius of the polaron at finite temperatures fair above Néel Temperature. The computational model was tested to reproduce EuTe properties without polarons (Néel Temperature and critical magnetic field) and with polarons (photoluminescence line shift). Beside the development of this computational model, that can be used to study other systems, the knowledge acquired during the studies on EuTe helped us to better understand the more complex system of the GaAs/AlGaAs +dMn heterostructure. The studies about the GaAs/AlGaAs + dMn heterostructure were based on experimental measurements of time-resolved Kerr rotation. The measurement system we built also allows us to perform spatial-resolved Kerr rotation measurements to study spin transport and spin helix on semiconductors and it is described in details in one chapter of this thesis. The optical manipulation of Mn ions magnetization on the studied sample is consequence of the exchange interaction with the photoexcited electron inside the quantum well. The results of Kerr rotation measurements show a time-dependent precession frequency that reveals the existence of two process with distinct dynamics: the initial orientation of Mn ions spins with the photoexcited electron-hole pair, followed by the realignment of these spins with the external magnetic field, as soon as the photoexcited hole spins loose its coherence. These results indicate that the exchange interaction between the photoexcited electron inside the quantum well and the Mn ions is mediated by the photoexcited holes, in opposition of what was being proposed in previous studies of similar structures, but in agreement with the sp-d model, used to explain the (Ga,Mn)As ferromagnetism.

Ce travail de thèse a été consacré à l'étude à la fois théorique et expérimentale de la dynamique de l'aimantation assistée par un champ électrique dans un dispositif à base de (Ga,Mn)As. Une couche de (Ga,Mn)As, dont l’anisotropie magnétique est complexe, est un matériau de choix pour la manipulation de l’aimantation par un champ électrique.J’ai présenté une stratégie de retournement précessionnel de l'aimantation qui tire partie de la réduction transitoire de l'anisotropie cubique provoquée par une courte impulsion de champ électrique. A l’aide d’un modèle macrospin, j’ai démontré notamment qu'une impulsion de champ électrique de quelques ns de durée est suffisante pour basculer l'aimantation entre deux positions d'équilibres.L'aspect expérimental est basé sur l'utilisation d'une jonction p-n tout semi-conducteur dont la région dopée p est formée par une couche mince de (Ga,Mn)As. La déplétion des porteurs de charge dans le canal semi-conducteur provoquée par l'application d'un train d'impulsions de tension de courte durée induit une forte diminution du champ d'anisotropie cubique. L'étude expérimentale du renversement de l'aimantation en champ magnétique a conduit à la mise en évidence d'un retournement de l'aimantation via la nucléation et la propagation de parois et d’une distribution large des champs de piégeage. L'inhomogénéité magnétique au sein de la couche de (Ga,Mn)As a empêché l'observation d'une résonance ferromagnétique induite par un champ électrique. Néanmoins, des mesures de retournement avec une ou plusieurs impulsions de tension de grille ont permis de proposer un processus de renversement de l'aimantation induit par un champ électrique. / This work has been devoted to the study of both theoretical and experimental electric field induced magnetization dynamics in a (Ga,Mn)As based device. A layer of (Ga,Mn)As, whose magnetic anisotropy is complex, is of particular interest for magnetization manipulation by electric fields.I proposed a scheme for the precessional switching of the magnetization using cubic anisotropy field reduction triggered by electric field pulse. Using a model macrospin, I demonstrated that a ns-pulse is sufficient to switch the magnetization between two equilibrium positions.An all-semiconductor epitaxial p-n junction based on low-doped (Ga,Mn)As was fabricated. Gating effects triggered by low voltage pulses induced a strong decrease of the cubic anisotropy field. I demonstrated that magnetization reversal is dominated by the nucleation and the propagation of domain walls. The distribution of pinning fields was found to be broad. Due to a magnetic inhomogeneity of the (Ga,Mn)As layer, it was not possible to observe any ferromagnetic resonance induced by an electric field. However, I proposed a magnetization reversal scenario based on single or multiple gate voltage pulses measurements

Nesta tese, analisamos dois sistemas de semicondutores magnéticos: um semicondutor magnético cristalino de EuTe e uma heteroestrutura formada por um poço quântico de GaAs/AlGaAs ao lado uma barreira tipo delta de Mn, que, ao difundir-se, forma o semicondutor magnético diluído de (Ga,Mn)As. Nossos estudos foram focados na possibilidade de manipularmos oticamente a orientação magnética de ambos os sistemas. No semicondutor magnético de EuTe, a indução de magnetização se dá pela formação de polarons magnéticos ao redor de elétrons fotoexcitados. Para o estudo dos polarons, um modelo teórico elaborado foi adaptado para a construção de um sistema computacional baseado no método de Monte Carlo. Essa sistema permitiu o cálculo do momento magnético e do raio do polaron em temperaturas finitas, muito acima da temperatura de Néel. O modelo foi elaborado para reproduzir tanto as propriedades do EuTe sem o polaron (temperatura de Néel e campo crítico), quanto o deslocamento da linha de fotoluminescência devido a formação do polaron. Além do desenvolvimento do próprio método computacional, que pode ser utilizado para estudar outros sistemas, o conhecimento adquirido com o estudo do EuTe serviu como base para o estudo de um sistema mais complexo, que é a heteroestrutura de GaAs/AlGaAs + dMn. O estudo da heteroestrutura de GaAs/AlGaAs + dMn foi feito em cima de medidas experimentais de rotação de Kerr com resolução temporal. O sistema de medição construído permite, também, medidas de rotação de Kerr com resolução espacial, que servem para o estudo de transporte e hélice de spin em semicondutores, e está detalhadamente descrito em um dos capítulo desta tese. Na amostra estudada, o controle da magnetização dos íons de Mn é feito através da interação de troca com o elétron fotoexcitado no poço quântico. Os resultados obtidos das medidas de rotação de Kerr mostram uma frequência de precessão dependente do tempo, que revela a existência de dois processos com dinâmicas diferentes: uma primeira orientação do spin dos íons de Mn devido à polarização do par elétron-buraco no poço quântico, seguida por um realinhamento desses spins com o campo magnético externo, a partir do momento em que a coerência dos spins dos buracos desaparece. Esse resultado sugere que a interação entre os elétrons fotoexcitados e os íons de Mn ocorre por intermédio dos buracos fotoexcitados, ao contrário do que havia sido proposto em estudos anteriores de estruturas similares, mas de acordo com o modelo de interação sp-d, utilizado para explicar o ferromagnetismo do (Ga,Mn)As. / In this thesis we analyzed two magnetic semiconductor systems: one intrinsic magnetic semiconductor crystal of EuTe and one GaAs-based heterostructure with a GaAs/AlGaAs quantum well close to delta-type Mn barrier, that forms a diluted magnetic semiconductor of (Ga,Mn)As after diffusion. Our studies on both systems were focused on the possibility of optical manipulation of magnetic order. In EuTe pure semiconductor, the magnetization control occurs due to de formation od magnetic polarons around photo-excited electrons. To study magnetic polarons we adapted a theoretical model to build a computer simulation system based on Monte Carlo\'s method. This system allowed us to calculate the magnetic moment and radius of the polaron at finite temperatures fair above Néel Temperature. The computational model was tested to reproduce EuTe properties without polarons (Néel Temperature and critical magnetic field) and with polarons (photoluminescence line shift). Beside the development of this computational model, that can be used to study other systems, the knowledge acquired during the studies on EuTe helped us to better understand the more complex system of the GaAs/AlGaAs +dMn heterostructure. The studies about the GaAs/AlGaAs + dMn heterostructure were based on experimental measurements of time-resolved Kerr rotation. The measurement system we built also allows us to perform spatial-resolved Kerr rotation measurements to study spin transport and spin helix on semiconductors and it is described in details in one chapter of this thesis. The optical manipulation of Mn ions magnetization on the studied sample is consequence of the exchange interaction with the photoexcited electron inside the quantum well. The results of Kerr rotation measurements show a time-dependent precession frequency that reveals the existence of two process with distinct dynamics: the initial orientation of Mn ions spins with the photoexcited electron-hole pair, followed by the realignment of these spins with the external magnetic field, as soon as the photoexcited hole spins loose its coherence. These results indicate that the exchange interaction between the photoexcited electron inside the quantum well and the Mn ions is mediated by the photoexcited holes, in opposition of what was being proposed in previous studies of similar structures, but in agreement with the sp-d model, used to explain the (Ga,Mn)As ferromagnetism.

Ce travail de thèse a été consacré à l'étude à la fois théorique et expérimentale de la dynamique de l'aimantation assistée par un champ électrique dans un dispositif à base de (Ga,Mn)As. Une couche de (Ga,Mn)As, dont l'anisotropie magnétique est complexe, est un matériau de choix pour la manipulation de l'aimantation par un champ électrique.J'ai présenté une stratégie de retournement précessionnel de l'aimantation qui tire partie de la réduction transitoire de l'anisotropie cubique provoquée par une courte impulsion de champ électrique. A l'aide d'un modèle macrospin, j'ai démontré notamment qu'une impulsion de champ électrique de quelques ns de durée est suffisante pour basculer l'aimantation entre deux positions d'équilibres.L'aspect expérimental est basé sur l'utilisation d'une jonction p-n tout semi-conducteur dont la région dopée p est formée par une couche mince de (Ga,Mn)As. La déplétion des porteurs de charge dans le canal semi-conducteur provoquée par l'application d'un train d'impulsions de tension de courte durée induit une forte diminution du champ d'anisotropie cubique. L'étude expérimentale du renversement de l'aimantation en champ magnétique a conduit à la mise en évidence d'un retournement de l'aimantation via la nucléation et la propagation de parois et d'une distribution large des champs de piégeage. L'inhomogénéité magnétique au sein de la couche de (Ga,Mn)As a empêché l'observation d'une résonance ferromagnétique induite par un champ électrique. Néanmoins, des mesures de retournement avec une ou plusieurs impulsions de tension de grille ont permis de proposer un processus de renversement de l'aimantation induit par un champ électrique.

We studied epitaxial layers of Gallium Manganese Arsenide by various x-ray scattering methods. Since the positions of the Mn dopant in the a host GaAs lattice are crucial for magnetic properties of this material, we focused mainly on a development of the laboratory diffraction method capable to identify Mn in particular crystallographic positions. From the measured diffracted intensity distributed along Crystal Truncation Rods, it is possible deduce the density of Mn interstitials in two non-equivalent crystallographic positions. It is possible to decrease the interstitial Mn density by annealing. We demonstrated our method on severally annealed epitaxial layer. The depth profile of interstitial density was determined after each annealing. The annealing process was simulated by the solving of the Drift- Diffusion equations. From the comparison with the experimentally determined interstitial densities, we estimated the diffusivity of Mn interstitials in the GaAs lattice. Powered by TCPDF (www.tcpdf.org)

Ce travail étudie le rôle de la densité de trous à l’équilibre sur la dynamique des charges et de la norme de l’aimantation de (Ga,Mn)As pour des densités de manganèse et d’impuretés fixées indépendamment. Des expériences « pompe-sonde » mettent en relation les dynamiques de réflectivité et d’angle de rotation Kerr. Deux relaxations sont mises en évidence. La première traduit un échauffement variable du gaz de trous entre 1ps et 100ps. La seconde traduit une diffusion-recombinaison des charges entre 100ps et 1500ps et évolue en fonction du rapport entre extension spatiale d’états d’impuretés, piégeant les électrons photo générés, et vitesse de Fermi. Pour compléter l’approche, une étude numérique de l’état fondamental des échantillons par la théorie de la fonctionnelle de la densité relie aimantation, température et densité de trous. Elle interprète la dynamique de la norme de l’aimantation à partir d’un diagramme de phase statique correspondant aux données publiées pour (Ga,Mn)As, qui est fonction de la température et de la densité de trous. Cette dynamique se ramène à celle de la réflectivité. Ceci permet de préciser les contributions de la norme et de l’orientation de l’aimantation dans le signal dynamique de rotation Kerr. / The effects of the background hole density on the charge and magnitude of the magnetization dynamics in (Ga,Mn)As grown with independently fixed manganese and impurity densities. A pump and probe experiment monitored simultaneously the reflectivity and Kerr angle dynamics. Two relaxation steps are highlighted. First the cooling down of the charge clouds between 1ps and 100ps and second the carrier’s diffusion-recombination between 100ps and 1.500 ns. The latter depends on the ratio between the spatial extent of impurity states, which trap the photo electrons, and the Fermi velocity. To complete these experimental results, a numerical study of the ground state of the samples, using a density functional theory, relates the magnitude of the magnetization, the temperature of the carriers and the density of holes. Phase diagram are computed, and compared to already published results. We show that the magnitude of the magnetization dynamics can be fully determined from the reflectivity measurements. We conclude that it is possible to distinguish the dynamics of the magnetization magnitude and direction using the Kerr angle dynamical signal.

Ce travail étudie le rôle de la densité de trous à l'équilibre sur la dynamique des charges et de la norme de l'aimantation de (Ga,Mn)As pour des densités de manganèse et d'impuretés fixées indépendamment. Des expériences " pompe-sonde " mettent en relation les dynamiques de réflectivité et d'angle de rotation Kerr. Deux relaxations sont mises en évidence. La première traduit un échauffement variable du gaz de trous entre 1ps et 100ps. La seconde traduit une diffusion-recombinaison des charges entre 100ps et 1500ps et évolue en fonction du rapport entre extension spatiale d'états d'impuretés, piégeant les électrons photo générés, et vitesse de Fermi. Pour compléter l'approche, une étude numérique de l'état fondamental des échantillons par la théorie de la fonctionnelle de la densité relie aimantation, température et densité de trous. Elle interprète la dynamique de la norme de l'aimantation à partir d'un diagramme de phase statique correspondant aux données publiées pour (Ga,Mn)As, qui est fonction de la température et de la densité de trous. Cette dynamique se ramène à celle de la réflectivité. Ceci permet de préciser les contributions de la norme et de l'orientation de l'aimantation dans le signal dynamique de rotation Kerr.