Diluted magnetic semiconductor oxides (DMSOs) have received great attention recently due to their outstanding applications in optoelectronic and spintronic devices. Ever since the initial observation of ferromagnetism at room temperature in cobalt-doped titania, extensive effort is concentrated on preparation of transition metal doped wide band gap semiconductors, especially Mn- doped ZnO. Compared to Mn-doped ZnO, magnetic interactions in SnO! and In!O! semiconductors have been underexplored. SnO! and In!O! semiconductors have many applications, owing to their high charge carrier density and mobility as well as high optical transparency. Investigation on electronic structure changes induced by dopants during the synthesis procedure can effectively influence magnetic interactions between charge carriers. In this work, a combination of structural and spectroscopic methods was used to probe as-synthesized SnO! and In!O! nanocrystals doped with Mn!! and Mn!! as precursors. X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectroscopy are powerful techniques to explore formal oxidation state of manganese dopant, electronic environment, number of nearest neighbors around the absorbent, and bond lengths to the neighboring atoms. Analysis reveals the presence of multiple oxidation states in the doped nanocrystals, and establishes a relation between !"!! ratio and expansion or contraction of lattice parameters. !"!! Although doping semiconductors are crucial for manipulating the functional properties, the influence of dopants on nanocrystals structure is not well understood. Nanocrystalline films prepared from colloidal Mn-doped SnO! and In!O! nanocrystals through spin coating process exhibit ferromagnetic behavior in temperatures ranging from 5 K to 300 K. Magnetic transformation from paramagnetic in free-standing Mn-doped nanocrystals to strong ferromagnetic ordering in nanocrystalline films is attributed to the formation of extended structural defects, e.g., oxygen vacancies at the nanocrystals interface. Magnetic circular dichroism (MCD) studies clearly show that Mn!! occupies different symmetry sites in indium oxide, when bixbyite and rhombohedral In!O! nanocrystals (NCs) are compared.

Doctor of Philosophy / Department of Chemistry / Emily McLaurin / Quantum dots are nanocrystalline semiconductors in which the size is so small that optoelectronic properties are size dependent. QDs have a lot of applications in displays, solar cells, lasers, light emitting diodes, etc. The optoelectronic properties of QDs depend on their size, composition, the shape of the particles and also the surface chemistry of the QDs. Phosphine based precursors have been mostly used in the synthesis of QDs. Due to the lack of tunable reactivity, this class of precursors, QDs with different shape are obtained by under different reaction conditions. With that, branched QDs are less likely to be obtained in one step reaction using phosphine based precursors. To synthesis QDs with a branched structure, in a single step synthesis, mixtures of precursors with different reactivity were used. Using dichalcogenides mixture, CdSe₁-xSx hyperbranched supra-quantum dots (HSQDs) where synthesized in a one-step microwave-assisted synthesis and shape evolution mechanism of formation of NCs studied. It is shown that the NCs formed in three steps of nucleation, aggregation, and growth. By controlling the reaction conditions, simple branched tetrapod NCs are prepared, but the obtained NCs have no emission due to unpassivated surface and defects which work as trap. To obtain luminescent NCs obtained through doping. Hyperbranched Mn²+:ZnSe₁-xSx NCs also prepared using a mixture of Ph₂Se₂ and Me₂S₂. The shape evolution mechanism of the formation of NCs was studied and it is shown that the NCs are formed via oriented attachment of initially formed nanoparticles. The NCs used for thiol sensing, and it observed that they have a better sensitivity and detection limit than spherical QDs. Although hyperbranched NCs have higher sensitivities over nonbranched NCs but, the spherical NCs have better detection limit and can dispersed in aqueous medium by ZnS shell growth followed by silica shell formation. To study the effect of ZnS shell thickness on sensing property of NCs, a set of spherical Mn:ZnSe@ZnS with different ZnS shell thickness were prepared and used for thiol sensing. It observed that in organic medium, thinner ZnS layer gives the highest sensitivity and QDs with thick ZnS shell layer have less sensitivity. For measurement in aqueous medium, QDs transferred to PBS buffer after formation of silica shell over QDs. It observed that NCs with a thin ZnS shell layer lose their emission and sensing completely. Thick ZnS shell protects NCs in the silica shell formation step but they show very low sensitivity to thiol compounds as well. ZnS shell with medium thickness gives the best sensitivity in an aqueous medium. The emission of Mn:ZnSe@ZnS QDs originated from d-d electron transition of Mn(II) ions and is independent to the size of QDs. To extend our study to QDs with band edge emission, preparation of luminescent InP QDs by post-synthetic modification is studied. InP NCs were synthesized using heat up method and successive injection of precursors. Narrow size distribution NCs obtained after size selection precipitation. Emissive NCs obtained after etching using InCl3 and fluoride containing salts. The study showed that more InCl3 case more etching and presence of fluoride-containing salt is necessary for band edge emission of the NCs.

Mn-doped II-VI semiconductor nanocrystals exhibit bright dopant photoluminescence that has potential usefulness for light emitting devices, temperature sensing, and biological imaging. The bright luminescence comes from the 4T1→6A1 transition of the Mn2+ d electrons after the exciton-dopant energy transfer, which reroutes the exciton relaxation through trapping processes. The driving force of the energy transfer is the strong exchange coupling between the exciton and Mn2+ due to the confinement of exciton in the nanocrystal. The exciton-Mn spatial overlap affecting the exchange coupling strength is an important parameter that varies the energy transfer rate and the quantum yield of Mn luminescence. In this dissertation, this correlation is studied in radial doping location-controlled Mn-doped CdS/ZnS nanocrystals. Energy transfer rate was found decreasing when increasing the doping radius in the nanocrystals at the same core size and shell thickness and when increasing the size of the nanocrystals at a fixed doping radius. In addition to the exciton-Mn energy transfer discussed above, two consecutive exciton-Mn energy transfers can also occur if multiple excitons are generated before the relaxation of Mn (lifetime ~10^-4 - 10^-2 s). The consecutive exciton-Mn energy transfer can further excite the Mn2+ d electrons high in conduction band and results in the quenching of Mn luminescence. The highly excited electrons show higher photocatalytic efficiency than the electrons in undoped nanocrystals. Finally, the effect of local lattice strain on the local vibrational frequency and local thermal expansion was observed via the temperature-dependent Mn luminescence spectral linewidth and peak position in Mn-doped CdS/ZnS nanocrystals. The local lattice strain on the Mn2+ ions is varied using the large core/shell lattice mismatch (~7%) that creates a gradient of lattice strain at various radial locations. When doping the Mn2+ closer to the core/shell interface, the stronger lattice strain softens the vibrational frequency coupled to the 4T1→6A1 transition of Mn2+ (Mn luminescence) by ~50%. In addition, the lattice strain also increases the anharmonicity, resulting in larger local thermal expansion observed from the nearly an order larger thermal shift of the Mn luminescence compared to the Mn-doped ZnS nanocrystals without the core/shell lattice mismatch.

The electronic structures of Mn £_-doped epitaxial GaN films grown on sapphire substrates are studied by scanning tunneling microscopy in this work. Local structural information and the corresponding electronic properties of Mn £_-doped GaN films are probed by the combination of scanning tunneling microscopy and atomic-scale scanning tunneling spectroscopy measurements. According to the electronic local density of states analysis indicates that Mn ions develop an acceptor level in GaN, revealing a gap state located at ~ 1.4 eV above the valence band edge of GaN. Furthermore, the energy position of the charge transfer levels of substitutional MnGa within GaN energy gap is also elucidated and discussed in the work.

Diluted magnetic semiconductor oxides (DMSOs) have received great attention recently due to their outstanding applications in optoelectronic and spintronic devices. Ever since the initial observation of ferromagnetism at room temperature in cobalt-doped titania, extensive effort is concentrated on preparation of transition metal doped wide band gap semiconductors, especially Mn- doped ZnO. Compared to Mn-doped ZnO, magnetic interactions in SnO! and In!O! semiconductors have been underexplored. SnO! and In!O! semiconductors have many applications, owing to their high charge carrier density and mobility as well as high optical transparency. Investigation on electronic structure changes induced by dopants during the synthesis procedure can effectively influence magnetic interactions between charge carriers. In this work, a combination of structural and spectroscopic methods was used to probe as-synthesized SnO! and In!O! nanocrystals doped with Mn!! and Mn!! as precursors. X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectroscopy are powerful techniques to explore formal oxidation state of manganese dopant, electronic environment, number of nearest neighbors around the absorbent, and bond lengths to the neighboring atoms. Analysis reveals the presence of multiple oxidation states in the doped nanocrystals, and establishes a relation between !"!! ratio and expansion or contraction of lattice parameters. !"!! Although doping semiconductors are crucial for manipulating the functional properties, the influence of dopants on nanocrystals structure is not well understood. Nanocrystalline films prepared from colloidal Mn-doped SnO! and In!O! nanocrystals through spin coating process exhibit ferromagnetic behavior in temperatures ranging from 5 K to 300 K. Magnetic transformation from paramagnetic in free-standing Mn-doped nanocrystals to strong ferromagnetic ordering in nanocrystalline films is attributed to the formation of extended structural defects, e.g., oxygen vacancies at the nanocrystals interface. Magnetic circular dichroism (MCD) studies clearly show that Mn!! occupies different symmetry sites in indium oxide, when bixbyite and rhombohedral In!O! nanocrystals (NCs) are compared.

The thesis consists of eight chapters of which the first chapter presents a brief overview of inorganic nanostructures. Synthesis and magnetic properties of MnO and NiO nanocrystals are described in Chapter 2, with emphasis on the low-temperature ferromagnetic interactions in these antiferromagnetic oxides. Chapter 3 deals with the synthesis and characterizations of nanocrystals of ReO3, RuO2 and IrO2 which are oxides with metallic properties. Pressure-induced phase transitions of ReO3 nanocrystals and the use of the nanocrystals for carrying out surface-enhanced Raman spectroscopy of the molecules form Chapter 4. Use of ionic liquids to synthesize different nanostructures of semiconducting metal sulfides and selenides is described in Chapter 5. Synthesis of Mn-doped GaN nanocrystals and their magnetic properties are described in Chapter 6. A detailed investigation has been carried out on the growth kinetics of nanostructures of a few inorganic materials by using small-angle X-ray scattering and other techniques (Chapter 7). The study includes the growth kinetics of nanocrystals of Au, CdS and CdSe as well as of nanorods of ZnO. Results of a synchrotron X-ray study of the formation of nanocrystalline gold films at the organic-aqueous interface are also included in this chapter. Chapter 8 discuses the use of the organic-aqueous interface to generate Janus nanocrystalline films of inorganic materials where one side of the film is hydrophobic and other side is hydrophilic. This chapter also includes the formation of nanostructured peptide fibrils at the organic-aqueous interface and their use as templates to prepare inorganic nanotubes.

Electronic and optical properties of semiconducting nanocrystals, that can be engineered and manipulated by various ways like varying size, shape, composition, structure, has been a subject of intense research for more than last two decades. The size dependency of these properties in semiconductor nanocrystals is direct manifestation of the quantum confinement effect. Study of electronic and optical properties in smaller dimensions provides a platform to understand the evolution of fundamental bulk properties in the semiconductors, often leading to realization and exploration of entirely new and novel properties. Not only of fundamental interests, the semiconductor nanocrystals are also shown to have great technological implications in diverse areas. Besides size tunable properties, introduction of impurities, like transition metal ions, gives rise to new functionalities in the semicon-ductor nanocrystals. These materials, termed as doped semiconductor nanocrystals, have been the subject of great interest, mainly due to the their interesting optical properties. Among different transition metal doped semiconductor nanocrystals, manganese doped systems have drawn a lot on attention due to their certain advantages over other dopants. One of the major advantages of Mn doped semiconductor nanocrystals is that they do not suffer from the problem of self-absorption of emission, which quite often, is consid-ered detrimental in their undoped counterparts. The doped nanocrystals are known to produce a characteristic yellow-orange emission upon photoexcitation of the host that is relatively insensitive to the surface degradation of the host. This emission, originating from an atomic d-d transition of Mn2+ ions, has been a subject of extensive research in the recent past. In spite of the spin forbidden nature of the specific d-d transition, namely 6A1 −4 T1, these doped nanocrystals yield intense phosphorescence. However, one major drawback of utilizing this system for a wide range application has been the substantial inability of the community to tune the emission color of Mn-doped systems in spite of an intense effort over the years; the relative constancy of the emission color in these systems has been attributed to the essentially atomic nature of the optical transition involving localized Mn d levels. Interestingly, however, the Mn emission has a very broad spectral line-width in spite of its atomic-like origin. While the long (∼ 1 ms) emission life-time of the de-excitation process is well-studied and understood in terms of the spin and orbitally forbidden nature of the transition, there is little known concerning the process of energy transfer to the Mn from the host in the excitation step. In this thesis, we have studied the ultrafast dynamic processes involved in Mn emission and addressed the issues related to its tunability and spectral purity. Chapter 1 provides a brief introduction to the fundamental concepts relevant to the studies carried out in the subsequent chapters of this thesis. This chapter is started with a small preview of the nanomaterials in general, followed by a discussion on semiconducting nanomaterials, evolution of their electronic structure with dimensions and size as well as the effect of quantum confinement on their optical properties. As all the semiconducting nanomaterials studied in the thesis are synthesized via colloidal synthesis routes, a separate section is devoted on colloidal semiconducting nanomaterials, describing various ways of modifying or tuning their optical properties. This is followed by an introduction to the important class of materials “doped semiconductor nanocrystals”. With a general overview and brief history of these materials, we proceed to discuss about various aspects of manganese doped semiconductor nanocrystals in great details, highlighting the origin of the manganese emission and the associated carrier dynamics as well as different reported synthetic strategies to prepare these materials. The chapter is closed with the open questions related to manganese doped semiconductor nanocrystals and the scope of the present work. Chapter 2 describes different experimental and theoretical methods that have been employed to carry out different studies presented in the thesis. It includes common experimental techniques like UV-Vis absorption spectroscopy, steady-state and time-resolved photoluminescence spectroscopy used for optical measurements, X-ray diffraction, trans-mission electron microscopy and atomic absorption spectroscopy used for structural and elemental analysis. Experimental tools to perform special studies like transient absorption and single nanocrystal spectroscopy are also discussed. Finally, theoretical fitting method used to analyse various spectral data has been discussed briefly. Chapter 3 deals with the dynamic processes involved in the photoexcitation and emission in manganese doped semiconductor nanocrystals. For this study, Mn doped ZnCdS alloyed nanocrystal has been chosen as a model system. There are various radiative and nonrdiative recombination pathways of the photogenerated carriers and they often compete with each other. We have studied the dynamics of all possible pathways of carrier relaxation, viz. excitonic recombination, surface state emission and Mn d-d transition. The main highlight of this chapter is the determination of the time-scale to populate surface states and the Mn d-states after the photoexcitation of the host. Employing femtosecond pump-probe based transient absorption study we have shown that the Mn dopant states are populated within sub-picosecond of the host excitation, while it takes a few picoseconds to populate the surface states. Keeping in mind the typical life-time of the excitonic emission (∼ a few ns), the ultra-fast process of energy transfer from the host to the Mn ions explains why the presence of Mn dopant ions quenches the excitonic as well as the surface state emissions so efficiently. Chapter 4 presents a study of manganese emission in ZnS nanocrystals of different sizes. By varying the size of the ZnS host nanocrystal, we show that one can tune the Mn emission over a limited range. In particular, with a decrease in host size, the Mn emission has been observed to red-shift. We have attributed this shift in Mn emission to the change in the ratio of surface to bulk dopant ions with the variation of the host size, noting that the strength of the ligand field at the Mn site should depend on the position of the Mn ion relative to the surface due to a systematic lattice relaxation in such nanocrystals. The ligand field affects the emission wavelength directly by controlling the splitting of the t2 and e levels of Mn2+ ions. The surface dopant ions experience a strong ligand field due to distorted tetrahedral environment which leads to larger splitting of these t2 and e states. We further corroborated these results by performing doping concentration dependent emission and life-time studies. In Chapter 5 addresses two fundamental challenges related to manganese photolumines-cence, namely the lack of a substantial emission tunability and presence of a very broad spectral width (∼ 180-270 meV). The large spectral width is incompatible with atomic-like manganese 4T1 −6 A1 transition. On the other hand, if this emission is atomic in nature, it should be relatively unaffected by the nature of the host, though it can be manipulated to some extent as discussed in Chapter 3. The lack of Mn emission tunability and spectral purity together seriously limit the usefulness of Mn doped semiconductor nanocrystals. To understand why the Mn emission tunability range is very limited (typically 565-630 nm) and to understand the true nature of this emission, we carried out single nanocrystal imaging and spectroscopy on Mn doped ZnCdS alloyed nanocrystals. This study reveals that Mn emission, in fact, can vary over a much wider range (∼ 370 meV) and exhibits widths substantially lower (∼ 60-75 meV) than reported so far. We explained the occur-rence of Mn emission in this broad spectral range in terms of the possibility of a large number of symmetry inequivalent sites resulting from random substitution of Cd and Zn ions that leads to differing extent of ligand field contributions towards the splitting of Mn d-levels. The broad Mn emission observed in ensemble-averaged measurements is the result of contribution from Mn ions at different sites of varying ligand field strengths inside the NC. Chapter 6 presents a synthetic strategy to strain-engineer a nanocrystal host lattice for a controlled tuning of the ligand field effect of the doped Mn sites. It is realized synthesizing a strained quantum dot system with the structure ZnSe/CdSe/ZnSe. A larger lattice parameter of CdSe compared to that of ZnSe causes a strain field that is maximum near the interface, gradually decreasing towards the surface. We control the positioning of Mn dopant ions at different distances from the interface, thereby doping Mn at different predetermined strain fields. With the help of this strain engineering, we are able to tune Mn emission across the entire range of the visible spectrum. This strain induced tuning of Mn emission is accompanied by life-times that is dependent on the emission energy which has been explained in terms of perturbation effect on the Mn center due to the strain generated inside the quantum dot. The spectacular emission tuning has been explained by modelling the quantum dot system as an elastic continuum containing three distinct layers under hydrostatic pressure. From this modelling, we found that the strain is max-imum at the interface and decreases continuously as one goes away from the interface. We also show that the Mn emission maximum red shifts with increasing distance of the dopants from the maximum strained region. In summary, we have performed a study on the photophysical processes in manganese doped semiconductor nanocrystals. We have emphasized in understanding of different dynamic processes associated with the manganese emission and tried to understand the true nature of manganese emission in a nanocrystal. This study has brought out some new aspects of manganese emission and opened up possibilities to tune and control manganese emission by proper design of the host material.

Transition metal oxides and chalcogenides are an ideal platform for demonstrating and investigating many interesting electronic phases of matter. These phases emerge as a result of collective many body interactions among the electrons. The omnipresent electron, depending on its interaction with other electrons and with the underlying lattice, can generate diverse phases of matter with exotic physical properties. The ultimate objective of Materials Science is to provide a complete microscopic understanding of these myriad electronic phases of matter. A proper understanding of the collective quant-tum behaviour of electrons in different system can also help in designing and tuning new electronic phases of matter that may have strong impact in the field of microelectronics, well beyond that predicted by Moore s law. Strong electron correlation effects produce a wide spectrum of ground state prop-retires like superconductivity, Metal Insulator Transition (MIT), charge-orbital ordering and many more. Similarly, different spin interactions among electrons, essentially due to various kinds of exchange coupling, give rise to varying magnetic ground state prop-retires like ferromagnetism, anti-ferromagnetism, spin glass, among others. The main objective of this thesis is to understand and rationalize diverse electronic and magnetic phases of matter in some selected strongly correlated systems. In chapter 1 we have provided an overview of various electronic and magnetic phases of matter which are relevant and necessary for understanding the chapters that follow. The first part of this chapter describes the fundamental concepts of the so called Metal Insulator Transition (MIT). A small section is dedicated to the subtle interactions among electrons and lattice that actually drive a system from a highly conducting metallic state to a strongly resistive insulating state. The second part of this chapter offers a compilation of different magnetic ground states which are discussed in detail in the last two chapters. In Chapter 2, we have explained various methodologies and experimental tech-antiques that have been used in the work reported in this thesis. In Chapter 3, we have provided a detailed understanding of the MIT in different polymorphic forms of Vanadium dioxide (VO2). Although VO2 exhibits a number of polymorphic forms, only the rutile/monoclinic VO2 phase has been studied extensively compared to other polymorphic forms. This phase shows a well-established MIT across ∼340 K, which has been extensively investigated in order to understand the relative importance of many body electron correlation effects arising primarily from on-site Coulomb interactions within the Vanadium 3d manifold, and single electron effects flounced by the dimerization of Vanadium atoms. Unlike the rutile phase of VO2, little is known about the MIT appearing across 212 K in the metastable B-phase of VO2. This phase shows dimerization of only half of the Vanadium atoms in the insulating state, in contrast to rutile/monoclinic VO2, which show complete dimerization. There is a long standing debate about the origin of the MIT in the rutile/monoclinic phase, that contrasts the role of the many-body Hubbard U term, with single particle effects of the dimerization. In light of this debate, the MIT in the B-phase offers a unique opportunity to understand and address the competition between many body and single particle effects, that has been unresolved over several decades. In this chapter we have investigated different polymorphs of VO2 to understand the underlying electronic structure and the nature of the MIT in these polymorphic forms. The MIT in VO2 B phase is very broad in nature. X-ray photoemission and optical conductivity data indicate that in case of VO2 B phase both correlation effects and dimerization is necessary to drive the MIT. We have also established that the correlation effects are more prominent for VO2 B phase compared to rutile/monoclinic phase. In Chapter 4, we have discussed the electronic structure of LaTiO3 (LTO)-SrTiO3 (STO) system. At the interface between polar LTO and non-polar (STO) oxides, an unique two dimensional electron gas (2DEG) like state appears, that exhibits a phenomenal range of unexpected transport, magnetic, and electronic properties. Thus, this interface stands as a prospective candidate for not only fundamental scientific investigation, but also application in technological and ultimately commercial frontiers. In this chapter, using variable energy Hard X-ray photoemission spectroscopy (HAXPES), we have experimentally investigated the layer resolved evolution of electronic structure across the interface in LTO-STO system. HAXPES results suggest that the interface is more coherent in nature and the coherent to incoherent feature ratio changes significantly as we probe deeper into the layer In chapter 5, we have investigated the electronic structure of the chemically exfoliated trigonal phase of MoS2. This elusive trigonal phase exists only as small patches on chemically exfoliated MoS2, and is believed to control functioning of MoS2 based devices. Its electronic structure is little understood, with total absence of any spec-troscopic data, and contradictory claims from theoretical investigations. We have ad-dressed this issue experimentally by studying the electronic structure of few layered chemically exfoliated MoS2 systems using spatially resolved X-ray photoemission spec-otoscopy and micro Raman spectroscopy in conjunction with electronic structure calculations. We have established that the ground state of this unique trigonal phase is actually a small gap (∼90 meV) semiconductor. This is in contrast with most of the claims in existing literature. In chapter 6, we have re-examined and revaluated the electronic structure of the late 3d transition metal monoxides (NiO, FeO, and CoO) using a combination of HAX-PES and state-of-the-art theoretical calculations. We have observed a strong evolution in the valence band spectra as a function of excitation energy. Theoretical results show that a combined GW+LDA+DMFT scheme is essential for explaining the observed experimental findings. Additionally, variable temperature HAXPES measurement In chapter 8, we have differentiated the surface and the bulk electronic structure in Sr2FeMoO6 and also have provided a new route to increase the Curie temperature of this material. Sr2FeMoO6 is well known for its high Curie temperature (Tc ∼410 K), half-metallic ferromagnetism, and a spectacularly large tunnelling magnetoresistance. The surface electronic structure of Sr2FeMoO6 is believed to be different from the bulk; leading to a Spin-Valve type Magnetoresistance. We have carried out variable energy HAXPES on Sr2FeMoO6 to probe electronic structure as a function of surface depth. Our experimental results indicate that surface is more Mo6+ rich. We have also demonstrated what we believe is the first direct experimental evidence of hard ferro-magnetism in the surface layer using X Ray Magnetic Circular Dichroism (XMCD) with dual detection mode. In the second part of this chapter we have designed a new route to increase the Curie temperature and have been successfully able to achieve a Curie temperature as high as 515 K.

Nanomaterials have attracted great interest due to the unique physical properties and great potential in the applications of nanoscale devices. Two dimensional atomic crystals, which are atomic thickness, especially graphene, have triggered the gold rush recently due to the fascinating high mobility at room temperature for future electronics. The crystal structure of nanomaterials will have great influence on their physical properties. Thus, this thesis is focused on developing the methods to control the crystal structure of nanomaterials, namely quantum dots as semiconductor, boron nitride (BN) as insulator, graphene as semimetal, with low cost for their applications in photonics, structural support and electronics. In this thesis, firstly, Mn doped ZnSe quantum dots have been synthesized using colloidal synthesis. The shape control of Mn doped ZnSe quantum dots has been achieved from branched to spherical by switching the injection temperature from kinetics to thermodynamics region. Injection rates have been found to have effect on controlling the crystal phase from zinc blende to wurtzite. The structural-property relationship has been investigated. It is found that the spherical wurtzite Mn doped ZnSe quantum dots have the highest quantum yield comparing with other shape or crystal phase of the dots. Then, the Mn doped ZnSe quantum dots were deposited onto the BN sheets, which were micron-sized and fabricated by chemical exfoliation, for high resolution imaging. It is the first demonstration of utilizing ultrathin carbon free 2D atomic crystal as support for high resolution imaging. Phase contrast images reveal moiré interference patterns between nanocrystals and BN substrate that are used to determine the relative orientation of the nanocrystals with respect to the BN sheets and interference lattice planes using a newly developed equation method. Double diffraction is observed and has been analyzed using a vector method. As only a few microns sized 2D atomic crystal, like BN, can be fabricated by the chemical exfoliation. Chemical vapour deposition (CVD) is as used as an alternative to fabricate large area graphene. The mechanism and growth dynamics of graphene domains have been investigated using Cu catalyzed atmospheric pressure CVD. Rectangular few layer graphene domains were synthesized for the first time. It only grows on the Cu grains with (111) orientation due to the interplay between atomic structure of Cu lattice and graphene domains. Hexagonal graphene domains can form on nearly all non-(111) Cu surfaces. The few layer hexagonal single crystal graphene domains were aligned in their crystallographic orientation over millimetre scale. In order to improve the alignment and reduce the layer of graphene domains, a novel method is invented to perform the CVD reaction above the melting point of copper (1090 ºC) and using molybdenum or tungsten to prevent the balling of the copper from dewetting. By controlling the amount of hydrogen during the growth, individual single crystal domains of monolayer over 200 µm are produced determined by electron diffraction mapping. Raman mapping shows the monolayer nature of graphene grown by this method. This graphene exhibits a linear dispersion relationship and no sign of doping. The large scale alignment of monolayer hexagonal graphene domains with epitaxial relationship on Cu is the key to get wafer-sized single crystal monolayer graphene films. This paves the way for industry scale production of 2D single crystal graphene.