GaN and its alloys with Al and In belong to the group III nitride semiconductors and are today the materials of choice for efficient white light emitting diodes (LEDs) enabling energy saving solid state lighting. Currently, there is a great interest in the development of novel inexpensive techniques to fabricate hybrid LEDs combining high quality III-N quantum well (QW) structures with inexpensive colloidal nanoparticles or conjugated polymers. Such hybrid devices are promising for future micro-light sources in full-color displays, sensors and imaging systems. Organics can be engineered to emit at different wavelengths or even white light based on functional groups or by blend of several polymers. This is especially important for the green region, where there is still a lack of efficient LEDs. Besides optoelectronics, other applications such as biochemical sensors or systems for water splitting can be realized using GaN-based nanostructures. Despite a significant progress in the field, there is still a need in fundamental understanding of many problems and phenomena in III-nitride based nanostructures and hybrids to fully utilize material properties on demand of specific applications. In this thesis, hybrid structures based on AlGaN/GaN QWs and colloidal ZnO nano-crystals have been fabricated for down conversion of the QW emission utilizing non-radiative (Förster) resonant energy transfer. Time-resolved photoluminescence (TRPL) was used to investigate the QW exciton dynamics depending on the cap layer thickness in the bare QW and in the hybrid samples. Although the surface potential influences the exciton dynamics, the maximum pumping efficiency assuming a non-radiative energy transfer mechanism was estimated to be ~40 % at 60 K in the structure with thin cap layer of 3 nm. Since bulk GaN of large area is difficult to synthesize, there is a lack of native substrates. Thus, GaN-based structures are usually grown on SiC or sapphire, which results in high threading dislocation density in the active layer of the device and can be the reason of efficiency droop in GaN based LED structures. Fabricating GaN nanorods (NR) can be a way to produce GaN with lower defect density since threading dislocations can be annihilated toward the NR wall during growth. Here, GaN(0001) NRs grown on Si(111) substrates by magnetron sputtering using a liquid Ga target have been investigated. A high quality of NRs have been confirmed by transmission electron microscopy (TEM) and TRPL. Two strong near band gap emission lines at ~3.42 eV and ~3.47 eV related to basal plane stacking faults (SF) and donor-bound exciton (DBE), respectively, have been observed at low temperatures. TRPL properties of the SF PL line suggest that SFs form a regular structure similar to a multiple QWs, which was confirmed by TEM. The SF related PL measured at 5 K for a single NR has a significantly different polarization response compared to the GaN exciton line and is much stronger polarized (> 40 %) in the direction perpendicular to the NR growth axis. Hybrids fabricated using GaN NRs and the green emitting polyfluorene (F8BT) have been studied using micro-TRPL. In contrast to the DBE emission, the recombination time of the SF-related emission was observed to decrease, which might be due to the Förster resonance energy transfer mechanism. Compared to chemical vapor deposition, sputtering allows synthesis at much lower temperatures. Here, sputtering was employed to grow InAlN/GaN heterostructures with an indium content targeted to ~18 %, which is lattice matched to GaN. This means that near strain-free GaN films can be synthesized. It was found that using a lower temperature (~25 C) while depositing the top InAlN results in an improved interface quality compared to deposition at 700 C. In latter case, regions of quaternary alloy of InAlGaN forming structural micro-defects have been observed at the top InAlN/GaN interface in addition to optically active flower-like defect formations.

Artificial photosynthesis is used to harvest solar energy and store it in the form of chemical bonds. The system of interest in this study does this by splitting water into hydrogen and oxygen gas through a plasmon assisted process, collective oscillations from free electron gas. This is a renewable way to store energy that could be used as an alternative to fossil based fuel. In this study, a small part of this photo catalytic system is studied, namely the interaction between plasmonically active silver nanoparticles (Ag NPs) transferring photo-excited electrons via a linker molecule, 4-aminobenzoic acid (pABA). The pABA linker molecule transfers charge from the Ag surface to a semiconductor and a catalyst performing the water splitting. The pABA can bind in different ways onto the Ag-surface and the aim of this study is to examine which bond is strongest and which best enables charge transfer. To this purpose three systems where simulated quantum mechanically using a supercomputer. The total free energy of the systems was computed and compared. Out of the three studied binding sites, the hollow-site bond (pABA binding to three silver atoms) was found to have the lowest energy, meaningit's the strongest of the possible bonds. Additionally it was found that the band gap (the energy needed to transfer charge) for the pABA decreased when bound to the Ag-surface. The hollow-site bound pABA also had the smallest band gap, meaning it requires the least energy to transfer a charge and should therefore be the best bond fitted for the photo catalytic system. / Artificiell fotosyntes används för att absorbera solenergi och förvara den i formen av kemiska bindningar. Systemet som används i denna studie gör detta genom att splittra vatten till vätgas och syrgas genom en plasmon assisterad process. Detta är ett förnyelsebart sätt att förvara energi och kan användas som ett alternativ till fossila bränslen. I denna studie studeras en liten del utav detta fotokatalytiska system nämligen interaktionen där plasmonaktiva silvernanopartiklar (Ag NPs) överför foto-exciterade elektroner genom molekyllänken 4-aminobensoesyra (pABA). Molekyllänken pABA överför laddning från silverytan till en halvledare och en katalys som utför splittringen av vattnet. pABA kan binda på olika sätt tillen silveryta och denna studie syftar till att undersöka vilken utav bindningarna som är starkast och vilken som effektivast överför laddning. För att göra detta simulerades tre system kvantmekaniskt med hjälp av en superdator, ett system för varje sorts bindning. Den totala fria energin av systemen beräknades och jämfördes. Av de tre undersökta bindningarna hadehollow-site bindningen (pABA som binder till tre silveratomer) längst energi, vilket betyder att det är den starkaste av bindningarna. Utöver detta så visade det sig att bandgapet (energin som krävs för att överföra laddning) minskade för pABA när den var bunden till Ag-ytan. Hollow-site bundet pABA hade även minst bandgap, vilket betyder att den kräver minst energi för att överföra laddning och är därmed den mest effektiva bindningen för det fotokatalytiska systemet.