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Esta tese avalia os benefícios e desafios associados com a operação em uma ampla faixa de frequências e tensões próximas ao limiar do transistor. A diminuição da tensão de alimentação em circuitos digitais CMOS apresenta grandes vantagens em termos de potência consumida pelo circuito. Esta diminuição da potência é acompanhada por uma redução da performance, reflexo da diminuição na tensão de alimentação. A operação de circuitos digitais no ponto de energia mínima é comumente associada ao regime de operação abaixo do limiar do transistor, trazendo enormes penalidades em performance e variabilidade. Esta dissertação mostra que é possível obter 8X mais eficiência energética com uma ampla faixa dinâmica de tensão e frequência, da tensão nominal até o limite inferior da operação próximo ao limiar do transistor. Como parte deste estudo, uma biblioteca de células digitais CMOS para esta ampla faixa de frequências foi desenvolvida. A biblioteca de células lógicas foi exercitada em um PDK comercial de 65nm para operação próximo ao limiar do transistor, reduzindo os efeitos da variabilidade sem comprometer o projeto em termos de área e energia quando operando em inversão forte. Para operar próximo e abaixo do limiar do transistor as células devem ser desenvolvidas com um número limitado de transistores em série. Nosso estudo mostra que uma performance aceitável em termos de margens de ruído estático é obtida para um conjunto restrito de células, onde são empregados no máximo dois transistores em série. Reportamos resultados para projetos de média complexidade que incluem um filtro notch de 25kgates, um microcontrolador 8051 de 20kgates, e 4 circuitos combinacionais/ sequenciais do conjunto de avaliação ISCAS. Neste trabalho, é estudada a máxima frequência atingida em cada tensão de alimentação, desde 0.15V até 1.2V. O ponto de mínima energia é demonstrado em operação abaixo do limiar do transistor, aproximadamente 0.29V, oque representa um ganho de 2X em eficiência energética comparado ao regime de operação próximo ao limiar do transistor. Embora o pico de eficiência energética ocorra abaixo do limiar do transistor para os circuitos estudados, nós também demonstramos que nesta tensão de alimentação ultra-baixa o atraso e a potência sofrem um impacto substancial devido ao aumento na variabilidade, atigindo uma degradação em performance de 30X, com respeito à operação próxima ao limiar do transistor. / This thesis assesses the benefits and drawbacks associated with a very wide range of frequency when operation at near-threshold is considered. Scaling down the supply voltage in digital CMOS circuits presents great benefits in terms of power reduction. Such scaling comes with a performance penalty, hence in digital synchronous circuits the reduction in frequency of operation follows, for a given circuit layout, the VDD reduction. Minimum-energy operation of digital CMOS circuits is commonly associated to the sub-VT regime, carrying huge performance and variability penalties. This thesis shows that it is possible to achieve 8X higher energy-efficiency with a very-wide range of dynamic voltage-frequency scaling, from nominal voltages down to the lower boundary of near-VT operation. As part of this study, a CMOS digital cell-library for such wide range of frequencies was developed. The cell-library is exercised in a 65nm commercial PDK and targets near-VT operation, mitigating the variability effects without compromising the design in terms of area and energy at strong inversion. For near-VT or sub-VT operation the cells have to be designed with few stacked transistors. Our study shows that acceptable performance in terms of static-noise margins is obtained for a constrained set of cells, for which a maximum of 2-stacked transistors are allowed. In this set we include master-slave registers. We report results for medium complexity designs which include a 25kgates notch filter, a 20kgates 8051 compatible core, and 4-combinational/4-sequential ISCAS benchmark circuits. In this work the maximum frequency attainable at each supply for a wide variation of voltage is studied from 150mV up to nominal voltage (1.2V). The sub-VT operation is shown to hold the minimum energy-point at roughly 0.29V, which represents a 2X energy-saving compared to the near-VT regime. Although energy-efficiency peaks in sub-VT for the circuits studied, we also show that in this ultra-low VDD the circuit timing and power suffer from substantially increased variability impact and a 30X performance drawback, with respect to near-VT.

Emerging computing architectures such as, neuromorphic computing and third party intellectual property (3PIP) cores, have attracted significant attention in the recent past. Neuromorphic Computing introduces an unorthodox non-von neumann architecture that mimics the abstract behavior of neuron activity of the human brain. They can execute more complex applications, such as image processing, object recognition, more efficiently in terms of performance and energy than the traditional microprocessors. However, focus on the hardware security aspects of the neuromorphic computing at its nascent stage. 3PIP core, on the other hand, have covertly inserted malicious functional behavior that can inflict range of harms at the system/application levels. This dissertation examines the impact of various threat models that emerges from neuromorphic architectures and 3PIP cores. Near-Threshold Computing (NTC) serves as an energy-efficient paradigm by aggressively operating all computing resources with a supply voltage closer to its threshold voltage at the cost of performance. Therefore, STC system is scaled to many-core NTC system to reclaim the lost performance. However, the interconnect performance in many-core NTC system pose significant bottleneck that hinders the performance of many-core NTC system. This dissertation analyzes the interconnect performance, and further, propose a novel technique to boost the interconnect performance of many-core NTC system.

<p> Two-pion production reactions in proton-proton collisions have been studied using the PROMICE/WASA detector and an internal cluster gas-jet target at the CELSIUS storage ring in Uppsala. Three out of the four isospin-independent reaction channels have been measured at several energies in the intermediate and near threshold energy region. Important parts of the analysis include the identification of neutral pions from the invariant mass of the decay gammas, the identification of positive pions with the delayed pulse technique and the use of Monte Carlo simulations to understand the detector response. The total cross sections for the pp®ppπ⁺π^-, the pp®ppπ⁰π⁰ and the pp®pnπ⁺π⁰ reactions are presented at beam energies ranging from 650 to 775 MeV. </p><p>The production mechanism for two-pion production near threshold seems to be dominated by resonance production. The contribution from the non-resonant terms alone can not reproduce the total cross sections. In most models, two-pion production is governed by the δ and the <i>N</i>^* resonances in either one or both of the participating nucleons. </p><p>The <i>N</i>^*(1440)®N(πp)^T=0_S−<i>wave</i> transition has been suggested as the dominating production mechanism for two-pion production in proton-proton collisions. However, the total cross sections presented in this thesis show that other production mechanisms also must give large contributions. </p>

Two-pion production reactions in proton-proton collisions have been studied using the PROMICE/WASA detector and an internal cluster gas-jet target at the CELSIUS storage ring in Uppsala. Three out of the four isospin-independent reaction channels have been measured at several energies in the intermediate and near threshold energy region. Important parts of the analysis include the identification of neutral pions from the invariant mass of the decay gammas, the identification of positive pions with the delayed pulse technique and the use of Monte Carlo simulations to understand the detector response. The total cross sections for the pp®ppπ+π-, the pp®ppπ0π0 and the pp®pnπ+π0 reactions are presented at beam energies ranging from 650 to 775 MeV. The production mechanism for two-pion production near threshold seems to be dominated by resonance production. The contribution from the non-resonant terms alone can not reproduce the total cross sections. In most models, two-pion production is governed by the δ and the N* resonances in either one or both of the participating nucleons. The N*(1440)®N(πp)T=0S−wave transition has been suggested as the dominating production mechanism for two-pion production in proton-proton collisions. However, the total cross sections presented in this thesis show that other production mechanisms also must give large contributions.

Esta tese avalia os benefícios e desafios associados com a operação em uma ampla faixa de frequências e tensões próximas ao limiar do transistor. A diminuição da tensão de alimentação em circuitos digitais CMOS apresenta grandes vantagens em termos de potência consumida pelo circuito. Esta diminuição da potência é acompanhada por uma redução da performance, reflexo da diminuição na tensão de alimentação. A operação de circuitos digitais no ponto de energia mínima é comumente associada ao regime de operação abaixo do limiar do transistor, trazendo enormes penalidades em performance e variabilidade. Esta dissertação mostra que é possível obter 8X mais eficiência energética com uma ampla faixa dinâmica de tensão e frequência, da tensão nominal até o limite inferior da operação próximo ao limiar do transistor. Como parte deste estudo, uma biblioteca de células digitais CMOS para esta ampla faixa de frequências foi desenvolvida. A biblioteca de células lógicas foi exercitada em um PDK comercial de 65nm para operação próximo ao limiar do transistor, reduzindo os efeitos da variabilidade sem comprometer o projeto em termos de área e energia quando operando em inversão forte. Para operar próximo e abaixo do limiar do transistor as células devem ser desenvolvidas com um número limitado de transistores em série. Nosso estudo mostra que uma performance aceitável em termos de margens de ruído estático é obtida para um conjunto restrito de células, onde são empregados no máximo dois transistores em série. Reportamos resultados para projetos de média complexidade que incluem um filtro notch de 25kgates, um microcontrolador 8051 de 20kgates, e 4 circuitos combinacionais/ sequenciais do conjunto de avaliação ISCAS. Neste trabalho, é estudada a máxima frequência atingida em cada tensão de alimentação, desde 0.15V até 1.2V. O ponto de mínima energia é demonstrado em operação abaixo do limiar do transistor, aproximadamente 0.29V, oque representa um ganho de 2X em eficiência energética comparado ao regime de operação próximo ao limiar do transistor. Embora o pico de eficiência energética ocorra abaixo do limiar do transistor para os circuitos estudados, nós também demonstramos que nesta tensão de alimentação ultra-baixa o atraso e a potência sofrem um impacto substancial devido ao aumento na variabilidade, atigindo uma degradação em performance de 30X, com respeito à operação próxima ao limiar do transistor. / This thesis assesses the benefits and drawbacks associated with a very wide range of frequency when operation at near-threshold is considered. Scaling down the supply voltage in digital CMOS circuits presents great benefits in terms of power reduction. Such scaling comes with a performance penalty, hence in digital synchronous circuits the reduction in frequency of operation follows, for a given circuit layout, the VDD reduction. Minimum-energy operation of digital CMOS circuits is commonly associated to the sub-VT regime, carrying huge performance and variability penalties. This thesis shows that it is possible to achieve 8X higher energy-efficiency with a very-wide range of dynamic voltage-frequency scaling, from nominal voltages down to the lower boundary of near-VT operation. As part of this study, a CMOS digital cell-library for such wide range of frequencies was developed. The cell-library is exercised in a 65nm commercial PDK and targets near-VT operation, mitigating the variability effects without compromising the design in terms of area and energy at strong inversion. For near-VT or sub-VT operation the cells have to be designed with few stacked transistors. Our study shows that acceptable performance in terms of static-noise margins is obtained for a constrained set of cells, for which a maximum of 2-stacked transistors are allowed. In this set we include master-slave registers. We report results for medium complexity designs which include a 25kgates notch filter, a 20kgates 8051 compatible core, and 4-combinational/4-sequential ISCAS benchmark circuits. In this work the maximum frequency attainable at each supply for a wide variation of voltage is studied from 150mV up to nominal voltage (1.2V). The sub-VT operation is shown to hold the minimum energy-point at roughly 0.29V, which represents a 2X energy-saving compared to the near-VT regime. Although energy-efficiency peaks in sub-VT for the circuits studied, we also show that in this ultra-low VDD the circuit timing and power suffer from substantially increased variability impact and a 30X performance drawback, with respect to near-VT.

The influences of a superheated steam environment and temperature on the nearthreshold crack growth behaviour of mild steel during rotating bending fatigue were investigated. A fatigue machine in which rotating bending is simulated was designed and built to allow continuous crack growth measurement. Experiments compared the threshold stress intensities (∆Kth ) for air at 24 °C, air at 160 °C and steam at 160 °C.Air at 160 °C yielded the lowest threshold stress intensity in both cases. Oxide thicknesses in the vicinity of the threshold were estimated from temper colours. The difference in threshold stress intensities can be explained by the concept of oxideinduced crack closure. / Dissertation (MEng (Metallurgical Engineering))--University of Pretoria, 2007. / Materials Science and Metallurgical Engineering / MEng / unrestricted

Les techniques de gestion dynamique de la tension (DVS) sont principalement utilisés dans la conception de circuits numériques pour en améliorer l'efficacité énergétique. Cependant, la réduction de la tension d'alimentation augmente l'impact de la variabilité et des erreurs temporelles dans les technologies nano-métriques. L'objectif principal de cette thèse est de gérer les erreurs temporelles et de formuler un cadre pour estimer la consommation d'énergie d'applications résistantes aux erreurs dans le contexte du régime proche du seuil (NTR) des transistors. Dans cette thèse, la détection et la correction d'erreurs basées sur la spéculation dynamique sont explorées dans le contexte de l'adaptation de la tension et de la fréquence d‘horloge. Outre la détection et la correction des erreurs, certaines erreurs peuvent être également tolérées et les circuits peuvent calculer au-delà de leurs limites avec une précision réduite pour obtenir une plus grande efficacité énergétique. La méthode de détection et de correction d'erreur proposée atteint 71% d'overclocking avec seulement 2% de surcoût matériel. Ce travail implique une étude approfondie au niveau des portes logiques pour comprendre le comportement des portes sous l'effet de modification de la tension d'alimentation, de la tension de polarisation et de la fréquence d'horloge. Une approche ascendante est prise en étudiant les tendances de l'énergie par rapport a l'erreur des opérateurs arithmétiques au niveau du transistor. En se basant sur le profilage des opérateurs, un flot d'outils est formulé pour estimer les paramètres d'énergie et d'erreur pour différentes configurations. Nous atteignons une efficacité énergétique maximale de 89% pour les opérateurs arithmétiques comme les additionneurs 8 bits et 16 bits au prix de 20% de bits défectueux en opérant en NTR. Un modèle statistique est développé pour que les opérateurs arithmétiques représentent le comportement des opérateurs pour différents impacts de variabilité. Ce modèle est utilisé pour le calcul approximatif dans les applications qui peuvent tolérer une marge d'erreur acceptable. Cette méthode est ensuite explorée pour unité d'exécution d'un processeur VLIW. L'environnement proposé fournit une estimation rapide des indicateurs d'énergie et d'erreurs d'un programme de référence par compilation simple d'un programme C. Dans cette méthode d'estimation de l'énergie, la caractérisation des opérateurs se fait au niveau du transistor, et l'estimation de l'énergie se fait au niveau fonctionnel. Cette approche hybride rend l'estimation de l'énergie plus rapide et plus précise pour différentes configurations. Les résultats d'estimation pour différents programmes de référence montrent une précision de 98% par rapport à la simulation SPICE. / Dynamic voltage scaling (DVS) technique is primarily used in digital design to enhance the energy efficiency by reducing the supply voltage of the design. However reduction in Vdd augments the impact of variability and timing errors in sub-nanometer designs. The main objective of this work is to handle timing errors, and to formulate a framework to estimate energy consumption of error resilient applications in the context of near-threshold regime (NTR). In this thesis, Dynamic Speculation based error detection and correction is explored in the context of adaptive voltage and clock overscaling. Apart from error detection and correction, some errors can also be tolerated or, in other words, circuits can be pushed beyond their limits to compute incorrectly to achieve higher energy efficiency. The proposed error detection and correction method achieves 71% overclocking with 2% additional hardware cost. This work involves extensive study of design at gate level to understand the behaviour of gates under overscaling of supply voltage, bias voltage and clock frequency (collectively called as operating triads). A bottom-up approach is taken: by studying trends of energy vs. error of basic arithmetic operators at transistor level. Based on the profiling of arithmetic operators, a tool flow is formulated to estimate energy and error metrics for different operating triads. We achieve maximum energy efficiency of 89% for arithmetic operators like 8-bit and 16-bit adders at the cost of 20% faulty bits by operating in NTR. A statistical model is developed for the arithmetic operators to represent the behaviour of the operators for different variability impacts. This model is used for approximate computing of error resilient applications that can tolerate acceptable margin of errors. This method is further explored for execution unit of a VLIW processor. The proposed framework provides quick estimation of energy and error metrics of a benchmark programs by simple compilation in a C compiler. In the proposed energy estimation framework, characterization of arithmetic operators is done at transistor level, and the energy estimation is done at functional level. This hybrid approach makes energy estimation faster and accurate for different operating triads. The proposed framework estimates energy for different benchmark programs with 98% accuracy compared to SPICE simulation.

Esta tese avalia os benefícios e desafios associados com a operação em uma ampla faixa de frequências e tensões próximas ao limiar do transistor. A diminuição da tensão de alimentação em circuitos digitais CMOS apresenta grandes vantagens em termos de potência consumida pelo circuito. Esta diminuição da potência é acompanhada por uma redução da performance, reflexo da diminuição na tensão de alimentação. A operação de circuitos digitais no ponto de energia mínima é comumente associada ao regime de operação abaixo do limiar do transistor, trazendo enormes penalidades em performance e variabilidade. Esta dissertação mostra que é possível obter 8X mais eficiência energética com uma ampla faixa dinâmica de tensão e frequência, da tensão nominal até o limite inferior da operação próximo ao limiar do transistor. Como parte deste estudo, uma biblioteca de células digitais CMOS para esta ampla faixa de frequências foi desenvolvida. A biblioteca de células lógicas foi exercitada em um PDK comercial de 65nm para operação próximo ao limiar do transistor, reduzindo os efeitos da variabilidade sem comprometer o projeto em termos de área e energia quando operando em inversão forte. Para operar próximo e abaixo do limiar do transistor as células devem ser desenvolvidas com um número limitado de transistores em série. Nosso estudo mostra que uma performance aceitável em termos de margens de ruído estático é obtida para um conjunto restrito de células, onde são empregados no máximo dois transistores em série. Reportamos resultados para projetos de média complexidade que incluem um filtro notch de 25kgates, um microcontrolador 8051 de 20kgates, e 4 circuitos combinacionais/ sequenciais do conjunto de avaliação ISCAS. Neste trabalho, é estudada a máxima frequência atingida em cada tensão de alimentação, desde 0.15V até 1.2V. O ponto de mínima energia é demonstrado em operação abaixo do limiar do transistor, aproximadamente 0.29V, oque representa um ganho de 2X em eficiência energética comparado ao regime de operação próximo ao limiar do transistor. Embora o pico de eficiência energética ocorra abaixo do limiar do transistor para os circuitos estudados, nós também demonstramos que nesta tensão de alimentação ultra-baixa o atraso e a potência sofrem um impacto substancial devido ao aumento na variabilidade, atigindo uma degradação em performance de 30X, com respeito à operação próxima ao limiar do transistor. / This thesis assesses the benefits and drawbacks associated with a very wide range of frequency when operation at near-threshold is considered. Scaling down the supply voltage in digital CMOS circuits presents great benefits in terms of power reduction. Such scaling comes with a performance penalty, hence in digital synchronous circuits the reduction in frequency of operation follows, for a given circuit layout, the VDD reduction. Minimum-energy operation of digital CMOS circuits is commonly associated to the sub-VT regime, carrying huge performance and variability penalties. This thesis shows that it is possible to achieve 8X higher energy-efficiency with a very-wide range of dynamic voltage-frequency scaling, from nominal voltages down to the lower boundary of near-VT operation. As part of this study, a CMOS digital cell-library for such wide range of frequencies was developed. The cell-library is exercised in a 65nm commercial PDK and targets near-VT operation, mitigating the variability effects without compromising the design in terms of area and energy at strong inversion. For near-VT or sub-VT operation the cells have to be designed with few stacked transistors. Our study shows that acceptable performance in terms of static-noise margins is obtained for a constrained set of cells, for which a maximum of 2-stacked transistors are allowed. In this set we include master-slave registers. We report results for medium complexity designs which include a 25kgates notch filter, a 20kgates 8051 compatible core, and 4-combinational/4-sequential ISCAS benchmark circuits. In this work the maximum frequency attainable at each supply for a wide variation of voltage is studied from 150mV up to nominal voltage (1.2V). The sub-VT operation is shown to hold the minimum energy-point at roughly 0.29V, which represents a 2X energy-saving compared to the near-VT regime. Although energy-efficiency peaks in sub-VT for the circuits studied, we also show that in this ultra-low VDD the circuit timing and power suffer from substantially increased variability impact and a 30X performance drawback, with respect to near-VT.