Made available in DSpace on 2014-12-17T15:14:52Z (GMT). No. of bitstreams: 1 EduardoMD_DISSERT.pdf: 1460594 bytes, checksum: 3bdc57732c952c77e8ca0b42292d1e86 (MD5) Previous issue date: 2011-01-27 / Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico / In this work we deposit via non-reactive magnetron sputtering of radio-frequency nanofilmes of nitreto of aluminum(AlN). The nanofilms aluminum nitride are semiconductors materials with high thermal conductivity, high melting point, piezoelectricity and wide band gap (6, 2 eV) with hexagonal wurtzite crystal structure, belonging to the group of new materials called III-V nitrides in which together with the gallium nitride and indium nitride have attracted much interest because they have physical and chemical properties relevant to new technological applications, mainly in microelectronic and optoelectronic devices. Three groups were deposited with thicknesses nanofilms time dependent on two substrates (glass and silicon) at a temperature of 25 ? C. The nanofilms AlN were characterized using three techniques, X-ray diffraction, Raman spectroscopy and atomic force microscopy (AFM), examined the morphology of these. Through the analysis of X-rays get the thickness of each sample with its corresponding deposition rate. The analysis of X-rays also revealed that nanofilms are not crystalline, showing the amorphous character of the samples. The results obtained by the technique, atomic force microscopy (AFM) agree with those obtained using the technique of X-rays. Characterization by Raman spectroscopy revealed the existence of active modes characteristic of AlN in the samples / Neste trabalho depositamos via magnetron sputtering de r?dio-frequ?ncia n?o reativo nanofilmes de nitreto de alum?nio (AlN). Os nanofilmes de nitreto de alum?nio s?o materiais semicondutores com alta condutividade t?rmica, elevado ponto de fus?o, piezoeletricidade e largo "bandgap"(6;2 eV) com estrutura cristalina wurtz?tica hexagonal, pertencentes ao grupo de novos materiais denominados nitretos III-V que em conjunto com o nitreto de g?lio e o nitreto de ?ndio t?m despertado muito interesse por possu?rem propriedades f?sico-qu?micas relevantes para novas aplica??es tecnol?gicas, principalmente em microeletr?nica e dispositivos optoeletr?nicos. Foram depositados tr?s grupos de nanofilmes com as espessuras depend?ntes do tempo, sobre dois tipos de substratos (vidro e sil?cio) a uma temperatura de 25?C. Os nanofilmes de AlN foram caracterizados usando tr?s t?cnicas, a difra??o de raios-X, espectroscopia Raman e microscopia de for?a at?mica (AFM), analisado-se a morfologia desses. Atrav?s da an?lise dos raios-X obtemos a espessura de cada amostra com sua respectiva taxa de deposi??o. A an?lise dos raios-X tamb?m revelou que os nanofilmes n?o s?o cristalinos, evidenciando o car?ter amorfo das amostras. Os resultados obtidos atrav?s da t?cnica, microscopia de for?a at?mica (AFM) concordam com os obtidos usando a t?cnica de raios-X. A caracteriza??o por espectroscopia Raman evidenciou a exist?ncia de modos ativos caracter?sticos do AlN nas amostras analisadas