Incorporation of nitrogen into ¢»-¢½ materials such as GaAsN and InGaAsN, have recently drawn much attention, due to the unique properties as well as potential device applications of such materials. The purpose of this thesis is to probe microscopic compositions and electronic structures in a series of N-based semiconductor compounds. For the material and electronic structure characterizations, X-ray photoelectron spectroscopy (XPS) with synchrotron radiation beam was adopted to analyze the sample quality under different growth and post-growth thermal annealing. Through detection of samples of InGaAsN in comparison with a series of samples of GaAsN, InAsN, InN, GaN, InGaAs and GaAs, the experimental result and analysis. Now X-ray photoelectron spectroscopy investigation on ¢»-¢½alloys containing a few percentage of nitrogen demonstrated the success of nitrogen incorporation. X-ray photoelectron spectroscopy investigation on InGaAsN films and curve fitting analysis, it can provide evidence of the existence of two principle N configurations, indicating the formation of N-In, N-Ga bonds. Through an estimation of the sample surface composition was made on the basis of the peak area: N-In/N-Ga larger than 3, it can provid direct evidence of the presence of preferential bonding of N to In. The incorporation of atomic nitrogen was added during the annealing. Right through X-ray photoelectron spectroscopy in annealed InGaAsN film can N-In and N-Ga bonds be observed to be increase, but N-In/N-Ga larger than 2, The bonds of atomic nitrogen is still N-Ga bonds.

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第18281号 / 工博第3873号 / 新制||工||1594(附属図書館) / 31139 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 川上 養一, 教授 藤田 静雄, 准教授 須田 淳 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM