The resistance random access memory (RRAM) is one of the most popular of the next generation memories with the high operating speed, reliability and the smallest miniature size. RRAM has metal-insulator-metal structure that can greatly reduce the difficulty of entry, but the biggest problem is how to choose the insulator. We selected silicon-based materials to match the intergrated circuits manufacturing process. In this work, sputtering titanium doping in the silicon oxide thin film has a stable characteristic of resistance switching. By material analyzing, we found that supercritical carbon dioxide fluid (SCCO2) treatment can passivate the silicon oxide defect and the self-reduction of titanium oxide, but it also brought OH group into our thin film. So we observed the interface type characteristic of resistance switching. Using constant voltage sampling experiment extract the reaction rate constant (k) and the active energy, prove that the reaction is caused by OH injection. Double-layer structure with titanium-doped and carbon-doped silicon oxide RRAM promote lower operating current by hopping conduction, which is caused by graphite oxide doping. The Space-Charge Limited Current mechanism for high limited current is proven by COMSOL electric field simulation.