No description available.

Photonic crystals and nanophotonics have received a great deal of attention over the last decade, largely due to improved numerical modeling and advances in fabrication technologies. To this day, fabrication and optical behavior remain decoupled during the design phase and numerous assumptions are made about "perfect" geometry. As research moves from theory to real devices, predicting device behavior based on realistic geometry becomes critical. In this dissertation, a set of numerical tools was developed to model micro and nano fabrication processes. They were combined with equally capable tools to model optical performance of the simulated structures. Using these tools, it was predicted and demonstrated that 3D nanostructures may be formed on a standard mask aligner. A space-variant photonic crystal filter was designed and optimized based on a simple fabrication method of etching holes through hetero-structured substrates. It was found that hole taper limited their optical performance and a method was developed to compensate. A method was developed to tune the spectral response of guided-mode resonance filters at the time of fabrication using models of etching and deposition. Autocloning was modeled and shown that it could be used to form extremely high aspect ratio structures to improve performance of form-birefringent devices. Finally, the numerical tools were applied to metallic photonic crystal devices.

In this dissertation, the prospect of a quantum technology based on a photonic crystal chip hosting a quantum network made of quantum dot spins interacting via single photons is investigated. The mathematical procedure to deal with the Liouville-Von Neumann equation, which describes the time-evolution of the density matrix, was derived for an arbitrary system, giving general equations. Using this theoretical groundwork, a numerical model was then developed to study the spatiotemporal dynamics of entanglement between various qubits produced in a controlled way over the entire quantum network. As a result, an efficient quantum interface was engineered allowing for storage qubits and traveling qubits to exchange information coherently while demonstrating little error and loss in the process; such interface is indispensable for the realization of a functional quantum network. Furthermore, a carefully orchestrated dynamic control over the propagation of the flying qubit showed high-efficiency capability for on-chip single-photon transfer. Using the optimized dispersion properties obtained quantum mechanically as design parameters, a possible physical structure for the photonic crystal chip was constructed using the Plane Wave Expansion and FiniteDifference Time-Domain numerical techniques, exhibiting almost identical transfer efficiencies in terms of normalized energy densities of the classical electromagnetic field. These promising results bring us one step closer to the physical realization of an integrated quantum technology combining both semiconductor quantum dots and subwavelength photonic structures.

No description available.

No description available.

No description available.

No description available.

No description available.

No description available.

Random hole optical fibers (RHOF) offer advantages over other types of microstructured optical fibers (MOFs). They are inexpensive and easy-to-make when compared to the high cost of ordered hole MOFs. They also have unique characteristics since they contain open and closed holes. The open holes contain ambient air under normal conditions and the closed holes contain residual gases from the fabrication process at certain pressure. The objective of this research work was to investigate the radiation resistance of Random Hole Optical Fibers (RHOF) for possible use as both sensing element and data transmission medium in nuclear reactor instrumentation and control applications. This work is motivated by the demand for efficient, cost effective, and safe operation of nuclear power plants, which accounts for more than 14% of the world's electricity production. This work has studied the effect of gamma irradiation on RHOF fibers by comparing their performance to that of standard solid telecommunication fibers and commercially available specialty solid fiber designed to be radiations hardened fiber. The fibers were evaluated at different absorbed dose levels: 12 mGy(Si), 350 mGy(Si), and 7200 Gy(Si) by measuring their radiation induced absorption (RIA) on-line. In the low dose test, the maximum RIA measured in untreated RHOF was approximately 8 dB while the RIA in the untreated MMF fibers reached a maximum at about 28 dB. In the high dose test, the maximum RIA measured in untreated RHOF was 36 dB while RIA in the methanol washed RHOF was only 9 dB. RHOF also demonstrated superior radiation damage recovery time over all of the other fibers tested. Based on the experimental evaluations, it was deduced that RHOFs used in this work are resistant to gamma radiation. and recover from radiation damage at a faster rate compared to other fibers tested. The radiation induced absorption (RIA) at the 1550 nm window in the RHOF fibers could be attributed to the OH absorption band tail. However, the existence of other mechanisms responsible for RIA is also postulated. Some of these mechanisms include bulk and surface defects which are related to the fabrication process and the influence of the gases confined within the RHOF microstructure. Gamma radiation resistance of RHOFs can be attributed to the lack of dopants and also possibly the inherent OH and nitrogen content. The behavior of thermally annealed RHOF and their fast recovery is in favor of this hypothesis. / Master of Science