The operation of a chemical process plant has become more complex with the addition of process integration and intensification. A greater emphasis on producing goods with the lowest product variability in the safest manner possible and stringent environmental regulation limiting the quantity of effluent release have all put more constraints on the physical and economic performance of the chemical plant. The performance of a plant is quantified by the ability of the process system to achieve its objectives, which is governed by its process design and control. The conventional approach to process design and control selection starts sequentially by proposing a process flowsheet for the plant. The selection criteria for a flowsheet are normally based only on its environmental impact and economic merits. It is after a process flowsheet is deemed financially suitable that process control development commences. However, a more integrated approach to process design and control stage may thus lead to a plant that has better achievable performance. The aim of this project is to provide a new approach to quantitative dynamic controllability analysis for integration of process design and control by using the concept of passivity and passive systems. Passivity is an input/output property of processes. Passive processes are stable and minimum phase and therefore very easy to control. For a given process, its shortage of passivity, which reflects destabilizing effects of factors such as time delays and Right-Half Plane (RHP) zeros, can be used to indicate its controllability. The project focuses in developing the proposed controllability analysis by combining the idea of passivity and IMC invertibility, which is then formulated into an optimization problem that can be solved by either using Semi-Definite Programming or Non-Linear Optimization. The achievable performance of the plant is quantified in terms of the sensitivity function of the open-loop process. The selection of a process from four different heat-integrated distillation column schemes was used as a case study and the result had clearly shown that the passivity-based controllability analysis was able to select a process based on the plant achievable performance under the constraint of passivity and design parameters.

Thesis (Ph. D.)--University of Missouri-Columbia, 2000. / Typescript. Vita. Includes bibliographical references (leaves 139-140). Also available on the Internet.

Thesis (Ph. D.)--University of Missouri-Columbia, 2000. / Typescript. Vita. Includes bibliographical references (leaves 139-140). Also available on the Internet.

No description available.

The ability to passivate metallic surfaces under non-UHV conditions is not only of fundamental interests, but also of growing practical importance in catalysis and microelectronics. In this work, the passivation effect of a surface iodine layer on air-exposed Ta for the copper electroless deposition was investigated by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Although the passivation effect was seriously weakened by the prolonged air exposure, iodine passivates the Ta substrate under brief air exposure conditions so that enhanced copper wetting and adhesion are observed on I-passivated Ta relative to the untreated surface.

by So King Lung, Benny. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves 102-109). / ABSTRACT --- p.v / ACKNOWLEDGEMENTS --- p.vii / LIST OF FIGURES --- p.viii / LIST OF TABLES --- p.xiii / Chapter Chapter 1 --- Background of the study --- p.1 / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.2 --- Surface passivation techniques --- p.3 / Chapter 1.2.1 --- Sulfide solution passivation --- p.3 / Chapter 1.2.2 --- Gas-phase sulfide passivation --- p.4 / Chapter 1.3 --- Surface structure of sulfide-passivated surface --- p.5 / Chapter 1.4 --- Objectives of the present study --- p.7 / Chapter Chapter 2 --- Instrumentation --- p.9 / Chapter 2.1 --- Introduction --- p.9 / Chapter 2.2 --- X-ray photoelectron spectroscopy (XPS) --- p.9 / Chapter 2.2.1 --- The development of XPS --- p.9 / Chapter 2.2.2 --- Basic principle of XPS --- p.9 / Chapter 2.2.3 --- Quantitative analysis of XPS --- p.14 / Chapter 2.2.3.1 --- Atomic concentration of a homogenous material --- p.14 / Chapter 2.2.3.2 --- Layer structure --- p.15 / Chapter 2.2.3.3 --- Simulation of XPS atomic concentration ratios from proposed surface structural models --- p.17 / Chapter 2.2.4 --- XPS experiment --- p.19 / Chapter 2.3 --- Low energy electron diffraction (LEED) --- p.21 / Chapter 2.3.1 --- The development of LEED --- p.21 / Chapter 2.3.2 --- Basic principle of LEED --- p.23 / Chapter 2.3.3 --- LEED experiment --- p.28 / Chapter 2.3.3.1 --- The ultra high vacuum chamber (UHV) --- p.28 / Chapter 2.3.3.2 --- The electron gun --- p.28 / Chapter 2.3.3.3 --- The sample --- p.30 / Chapter 2.3.3.4 --- The detector system --- p.30 / Chapter Chapter 3 --- Surface treatments --- p.31 / Chapter 3.1 --- Semiconductor wafers --- p.31 / Chapter 3.2 --- Cleaning procedure --- p.31 / Chapter 3.3 --- Polysulfide passivation --- p.33 / Chapter Chapter 4 --- Gas-phase polysulfide passivation of the InP(100) surface --- p.37 / Chapter 4.1 --- Introduction --- p.37 / Chapter 4.2 --- Sulfide-assisted reordering at the InP(100) surface --- p.38 / Chapter 4.2.1 --- Gas-phase polysulfide-treated InP( 100) surface --- p.38 / Chapter 4.2.2 --- Further annealing of the gas-phase polysulfide-treated surface --- p.47 / Chapter 4.2.3 --- Comparison with the UV/O3-HF treatment --- p.48 / Chapter 4.2.4 --- Sulfide at the interface of SiNx/InP --- p.49 / Chapter 4.3 --- Conclusions --- p.53 / Chapter Chapter 5 --- Gas-phase polysulfide passivation of the GaAs(lOO) surface --- p.55 / Chapter 5.1 --- Introduction --- p.55 / Chapter 5.2 --- Gas-phase poly sulfide-passivated GaAs( 100) surface --- p.56 / Chapter 5.2.1 --- Surface structure of the as-treated surface --- p.56 / Chapter 5.2.2 --- Surface structure after further annealing --- p.64 / Chapter 5.2.3 --- Mechanism of the gas-phase polysulfide passivation --- p.67 / Chapter 5.3 --- Conclusions --- p.68 / Chapter Chapter 6 --- Gas-phase polysulfide passivation of the GaAs(100) surface --- p.69 / Chapter 6.1 --- Introduction --- p.69 / Chapter 6.2 --- Reordering at the gas-phase polysulfide-passivated GaAs(100) surface --- p.70 / Chapter 6.2.1 --- Adsorption of polysulfide on the GaAs(100) surface --- p.70 / Chapter 6.2.2 --- Ordered sulfide at the GaAs(l 10) surface --- p.73 / Chapter 6.2.3 --- Further analysis of the LEED pattern --- p.80 / Chapter 6.3 --- Conclusions --- p.83 / Chapter Chapter 7 --- Sulfide Solution passivation of the GaAs(100) surface --- p.84 / Chapter 7.1 --- Introduction --- p.84 / Chapter 7.2 --- Sulfide solution passivation on the GaAs(l 10) surface --- p.85 / Chapter 7.2.1 --- Etching of sulfide solution on the GaAs(l 10) surface --- p.85 / Chapter 7.2.2 --- Annealing of sulfide solution-passivated GaAs( 110) surface --- p.88 / Chapter 7.2.3 --- Further analysis of the LEED pattern --- p.92 / Chapter 7.2.4 --- Shift of XPS peak position during annealing --- p.95 / Chapter 7.3 --- Conclusions --- p.97 / Chapter Chapter 8 --- Conclusions and further work --- p.99 / Chapter 8.1 --- Conclusions --- p.99 / Chapter 8.2 --- Further work --- p.100 / References --- p.102

Note: / as hip and knee prosthesis, orthopaedic fixations and coronary stents. The definition of a material's biocompatibility necessitates meeting a number of criteria, including high corrosion resistance and desirable interactions of the material's surface with biological species, such as cells, platelets, and serum proteins. SSs offer acceptable resistance to uniform (general) corrosion when used as materials of construction in sorne industrial applications, which is due to the formation of a thin passive oxide film on their surface. [...] / Les aciers inoxydables (AI) 316-L sont fréquemment utilisés dans le domaine biomédical. Par exemple, nous les retrouvons dans les prothèses de hanche et de genou, dans les fixatures orthopédiques et dans les prothèse vasculaires. Pour qu'un matériel soit biocompatible, il doit avoir une résistence élevée à la corrosion. De plus, la surface du matériel doit avoir des intéractions favorables avec les différentes espèces biologiques c'est-à-dire les cellules.[...]

Thesis (Ph. D.)--Ohio State University, 2005. / Available online via OhioLINK's ETD Center; full text release delayed at author's request until 2006 Nov 29

Note:

by Choy Wing Hong. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1998. / Includes bibliographical references (leaves 95-102). / Text in English; abstract also in Chinese. / by Choy Wing Hong. / ABSTRACT --- p.vi / ACKNOWLEDGEMENTS --- p.x / LIST OF FIGURES --- p.xi / LIST OF TABLES --- p.xiii / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Background --- p.1 / Chapter 1.2 --- Surface passivation techniques --- p.2 / Chapter 1.2.1 --- Sulfide solution passivation --- p.2 / Chapter 1.2.2 --- Gas-phase sulfide passivation --- p.3 / Chapter 1.2.3 --- Ultra-violet and ozone exposure --- p.4 / Chapter 1.3 --- Surface structure of sulfide-passivated surface --- p.5 / Chapter 1.4 --- Surface structure of ultra-violet/ozone oxidation --- p.8 / Chapter 1.5 --- Objectives of present study --- p.10 / Chapter Chapter 2 --- Instrumentation --- p.12 / Chapter 2.1 --- Introduction --- p.12 / Chapter 2.2 --- Atomic force microscopy (AFM) --- p.12 / Chapter 2.2.1 --- The development of AFM --- p.12 / Chapter 2.2.2 --- Basic principles of AFM --- p.12 / Chapter 2.2.3 --- Forces and their relevance to atomic force microscopy --- p.13 / Chapter 2.2.3.1 --- Van Der Waals forces --- p.15 / Chapter 2.2.3.2 --- Repulsive forces --- p.15 / Chapter 2.2.3.3 --- Capillary forces --- p.15 / Chapter 2.2.4 --- Displacement sensor of AFM --- p.15 / Chapter 2.2.4.1 --- Electron tunneling --- p.16 / Chapter 2.2.4.2 --- Optical interference --- p.16 / Chapter 2.2.4.3 --- Laser beam deflection --- p.16 / Chapter 2.2.5 --- Instrument specification --- p.17 / Chapter 2.2.5.1 --- Contact mode AFM --- p.17 / Chapter 2.3 --- X-ray photoelectron spectroscopy --- p.19 / Chapter 2.3.1 --- The development of XPS --- p.19 / Chapter 2.3.2 --- Basic principles of XPS --- p.19 / Chapter 2.3.3 --- XPS experiments --- p.23 / Chapter 2.3.4 --- Quantitative analysis --- p.26 / Chapter 2.3.4.1 --- Atomic concentration of a homogenous materials --- p.26 / Chapter 2.3.4.2 --- Layer structure --- p.27 / Chapter 2.4 --- Rutherford backscattering spectrometry (RBS) --- p.29 / Chapter 2.4.1 --- Basic principles --- p.29 / Chapter 2.4.2 --- Kinematics --- p.29 / Chapter 2.4.3 --- Channeling --- p.31 / Chapter Chapter 3 --- Surface treatments --- p.32 / Chapter 3.1 --- Semiconductor wafer --- p.32 / Chapter 3.2 --- Cleaning procedures --- p.32 / Chapter 3.3 --- Polysulfide passivation --- p.34 / Chapter 3.4 --- UV/Ozone oxidation --- p.39 / Chapter Chapter 4 --- Surface roughness and oxide contents of sulfide passivation --- p.41 / Chapter 4.1 --- Introduction --- p.41 / Chapter 4.2 --- Experimental methodology --- p.42 / Chapter 4.3 --- Etching --- p.44 / Chapter 4.3.1 --- Etching effect of polysulfide solution --- p.45 / Chapter 4.3.2 --- Possible consequences of the etching effect --- p.45 / Chapter 4.4 --- Oxide contents --- p.47 / Chapter 4.4.1 --- Oxide gained during polysulfide solution treatment --- p.47 / Chapter 4.4.2 --- Oxide gained after polysulfide passivation --- p.47 / Chapter 4.5 --- Surface roughness --- p.49 / Chapter 4.5.1 --- Surface roughness after different passivation methods --- p.49 / Chapter 4.5.2 --- The sticking probability after different passivations --- p.51 / Chapter 4.6 --- The spiral ladder of solution-phase passivation --- p.55 / Chapter 4.7 --- Conclusions --- p.58 / Chapter Chapter 5 --- Sulfide on Ge/GaAs heterojunction --- p.59 / Chapter 5.1 --- Introduction --- p.59 / Chapter 5.1.1 --- Band structure of Ge/GaAs heteroj unction --- p.59 / Chapter 5.1.2 --- Lattice match of Ge/GaAs heteroj unction --- p.60 / Chapter 5.1.3 --- The growth of Ge on GaAs using molecular beam epitaxy --- p.62 / Chapter 5.2 --- The growth of Ge on GaAs using thermal pulse annealing --- p.63 / Chapter 5.3 --- Sulfide as an atomic interdiffusion barrier --- p.65 / Chapter 5.3.1 --- Experimental methodology --- p.65 / Chapter 5.3.2 --- Crystallinity of Ge --- p.67 / Chapter 5.3.3 --- Results and discussions --- p.67 / Chapter 5.3.3.1 --- RBS and XPS results --- p.67 / Chapter 5.3.3.2 --- AFM and I-V results --- p.71 / Chapter 5.4 --- Conclusions --- p.71 / Chapter Chapter 6 --- UV/03 on Ge/GaAs heterojunction --- p.72 / Chapter 6.1 --- Introduction of UV/o3 oxidation --- p.72 / Chapter 6.2 --- UV/o3 oxidation on GaAs --- p.74 / Chapter 6.3 --- Ge on UV/o3 treated GaAs --- p.76 / Chapter 6.3.1 --- Experimental methodology --- p.76 / Chapter 6.3.2 --- Crystallinity of Ge --- p.77 / Chapter 6.3.3 --- AFM results --- p.77 / Chapter 6.3.4 --- RBS results --- p.80 / Chapter 6.4 --- Diodes --- p.82 / Chapter 6.4.1 --- Fabrication of diode --- p.82 / Chapter 6.4.2 --- Diode characteristics --- p.84 / Chapter 6.4.3 --- I-V characteristics --- p.90 / Chapter 6.5 --- Conclusions --- p.90 / Chapter Chapter 7 --- Conclusion and future work --- p.93 / Chapter 7.1 --- Conclusions --- p.93 / Chapter 7.2 --- Future works --- p.94 / Reference --- p.95