Thesis advisor: Ziqiang Wang / Angle-resloved photoemission spectroscopy (ARPES) is a powerful technique to study the electronic structure in solids. Its unique ability of resolving the energy and momentum information of electrons inside a solid provides an essential tool in measuring the electronic structure of solids. ARPES has made great contributions in the understanding of correlated system such as high-T_c superconductors and ruthenates. The Metal-insulator transition is a fundamental problem in condensed matter physics. The calcium substituted strontium ruthenate, Ca_2-xSr_xRuO₄, provides a good platform to study the metal-insulator transition in multi-orbital systems. This system has a complex phase diagram that evolves from a <italic>p</italic>-wave superconductor to a Mott insulator. One of important projects of this thesis focuses on Ca_2-xSr_xRuO₄ The growing evidence for coexistence of itinerant electrons and local moments in transition metals with nearly degenerate d orbitals suggests that one or more electron orbitals undergo a Mott transition while the others remain itinerant. We have observed a novel orbital selective Mott transition (OSMT) in Ca_1.8Sr_0.2RuO₄ by ARPES. While we observed two sets of dispersing bands and Fermi surfaces (FSs) associated with the doubly-degenerate d_yz and d_zx orbitals, the Fermi surface associated with the d_xy orbital which has a wider bandwidth is missing as a consequence of selective Mott localization. Our theoretical calculations have demonstrated that this unusual OSMT is mainly driven by the combined effects of inter-orbital carrier transfer, superlattice potentials and orbital degeneracy, whereas the bandwidth difference plays a less important role. Another important project of this thesis focuses on the recently discovered iron-pnictides superconductors. The idea of inter-FS scattering associated with the near-nesting condition has been proposed to explain the superconductivity in the pnictides. The near-nesting condition varies upon the carrier doping which shifts the chemical potential. We have performed a systematic photoemission study of the chemical potential shift as a function of doping in a pnictide system based on BaFe₂As₂. The experimentally determined chemical potential shift is consistent with the prediction of a rigid band shift picture by the renormalized first-principle band calculations. This leads to an electron-hole asymmetry (EHA) due to different Fermi velocities for different FS sheets, which can be calculated from the Lindhard function of susceptibility. This built-in EHA from the band structure, which is fully consistent with the experimental phase diagram, strongly supports that inter-FS scattering over the near-nesting Fermi surfaces plays a vital role in the superconductivity of the iron pnictides. / Thesis (PhD) — Boston College, 2010. / Submitted to: Boston College. Graduate School of Arts and Sciences. / Discipline: Physics.

Die vorliegende Arbeit befasst sich mit der Untersuchung der mikromagnetischen Domänenstruktur und des gekoppelten magneto-strukturellen Phasenübergangs dünner epitaktischer MnAs-Filme auf GaAs. Im Besonderen wird der Einfluss der Substratorientierung, der Filmdicke und eines externen magnetischen Feldes auf die magnetischen und strukturellen Eigenschaften untersucht. Dabei kommen die komplementären Untersuchungsmethoden AFM (atomic force microscopy) / MFM (magnetic force microscopy) und LEEM (low energy electron microscopy) / XMCDPEEM (X-ray magnetic circular dichroism photoemission electron microscopy) zum Einsatz. Im Zuge des Phasenübergangs erster Ordnung zeigen MnAs Filme auf GaAs (001) und (311)A eine regelmäßige Anordnung ferromagnetischer alpha-MnAs und paramagnetischer beta-MnAs Streifen. Die Breite der Streifen ist eine Funktion der Temperatur, während die Periodizität eine lineare Funktion der Filmdicke ist. Die Domänenstruktur hängt stark von der Breite bzw. dem Abstand der ferromagnetischen Streifen ab, da diese direkt die Formanisotropie bzw. die magnetische Kopplung beeinflussen. Die Domänenstrukturen wird, abhängig von der Zahl der Subdomänen entlang der leichten Magnetisierungsrichtung, klassifiziert, wobei bis zu drei elementare Domänentypen beobachtet werden. Bei MnAs-Filmen die auf der GaAs (111)B Oberfläche gewachsen wurden, führt die Epitaxie zu einem geänderten Spannungszustands des Films, wobei eine erhöhte Phasenübergangstemperatur beobachtet wird. Durch temperaturabhängige XMCDPEEM-, AFM- und MFM-Messungen kann gezeigt werden, daß durch den lokalen Abbau der Verspannung in der Nähe eines Risses die Phasenübergangstemperatur lokal erhöht ist. Um Ummagnetisierungsprozesse auf einer mikroskopischen Skala untersuchen zu können und um den Einfluß eines magnetischen Feldes auf die Domänenstruktur sichtbar zu machen, wurde das temperaturvariable Rastersondenmikroskop um einen variablen Magnetfeldaufbau ergänzt. / This work presents the study of the micromagnetic domain structure and the coupled magneto-structural phase transition of epitaxial MnAs thin films on GaAs. In particular, the influence of substrate orientation, film thickness and external magnetic field on the magnetic and structural properties are investigated, employing the complementary measurement techniques atomic force microscopy (AFM) / magnetic force microscopy (MFM) and low energy electron microscopy (LEEM) / X-ray magnetic circular dichroism photoemission electron microscopy (XMCDPEEM. In the course of the first-order phase transition MnAs films on GaAs (001) and (311)A substrates show a regular array of ferromagnetic alpha- and paramagnetic beta-MnAs stripes. The width of the ferromagnetic stripes are a function of the temperature, whereas the periodicity of the stripe pattern is a function of the film thickness. The domain structure strongly depends on the width and the distance of the ferromagnetic stripes, as it directly affects the shape anisotropy and magnetic coupling, respectively. The domain patterns are classified depending on the number of subdomains along the easy axis direction. Up to three basic domain types can be distinguished. For MnAs films grown on GaAs (111)B, the epitaxy leads to a different strain state of the film, resulting in polygonal ferromagnetic structures embedded in a honeycomb-like paramagnetic network, and a higher phase transition temperature. Using temperature-dependent AFM, MFM and XMCDPEEM it is shown that the local strain relaxation in the vicinity of cracks in the MnAs film results in a locally increased phase transition temperature. In order to study magnetization reversal processes on a microscopic scale, as well as the influence of the magnetic field on the domain structure, a variable-magnetic field set-up is employed.