Within condensed matter physics, systems with strong electronic correlations give rise to fascinating phenomena which characteristically require a physical description beyond a one-electron theory, such as high temperature superconductivity, or Mott metal-insulator transitions. In this thesis, a class of strongly correlated electron systems is considered. These systems exhibit fractionally charged excitations with charge +e/2 or -e/2 in two dimensions (2D) and three dimensions (3D), a consequence of both strong correlations and the geometrical frustration of the interactions on the underlying lattices. Such geometrically frustrated systems are typically characterized by a high density of low-lying excitations, leading to various interesting physical effects. This thesis constitutes a study of a model of spinless fermions on the geometrically frustrated kagome lattice. Focus is given in particular to the regime in which nearest-neighbour repulsions V are large in comparison with hopping t between neighbouring sites, the regime in which excitations with fractional charge occur. In the classical limit t = 0, the geometric frustration results in a macroscopically large ground-state degeneracy. This degeneracy is lifted by quantum fluctuations. A low-energy effective Hamiltonian is derived for the spinless fermion model for the case of 1/3 filling in the regime where |t| << V . In this limit, the effective Hamiltonian is given by ring-exchange of order ~ t^3/V^2, lifting the degeneracy. The effective model is shown to be equivalent to a corresponding hard-core bosonic model due to a gauge invariance which removes the fermionic sign problem. The model is furthermore mapped directly to a Quantum Dimer model on the hexagonal lattice. Through the mapping it is determined that the kagome lattice model exhibits plaquette order in the ground state and also that fractional charges within the model are linearly confined. Subsequently a doped version of the effective model is studied, for the case where exactly one spinless fermion is added or subtracted from the system at 1/3 filling. The sign of the newly introduced hopping term is shown to be removable due to a gauge invariance for the case of hole doping. This gauge invariance is a direct result of the bipartite nature of the hole hopping and is confirmed numerically in spectral density calculations. For further understanding of the low-energy physics, a derivation of the model gauge field theory is presented and discussed in relation to the confining quantum electrodynamic in two dimensions. Exact diagonalization calculations illustrate the nature of the fractional charge confinement in terms of the string tension between a bound pair of defects. The calculations employ topological symmetries that exist for the manifold of ground-state configurations. Dynamical calculations of the spectral densities are considered for the full spinless fermion Hamiltonian and compared in the strongly correlated regime with the doped effective Hamiltonian. Calculations for the effective Hamiltonian are then presented for the strongly correlated regime where |t| << V . In the limit g << |t|, the fractional charges are shown to be effectively free in the context of the finite clusters studied. Prominent features of the spectral densities at the Gamma point for the hole and particle contributions are attributed to approximate eigenfunctions of the spinless fermion Hamiltonian in this limit. This is confirmed through an analytical derivation. The case of g ~ t is then considered, as in this case the confinement of the fractional charges is observable in the spectral densities calculated for finite clusters. The bound states for the effectively confined defect pair are qualitatively estimated through the solution of the time-independent Schroedinger equation for a potential which scales linearly with g. The double-peaked feature of spectral density calculations over a range of g values can thus be interpreted as a signature of the confinement of the fractionally charged defect pair. Furthermore, the metal-insulator transition for the effective Hamiltonian is studied for both t > 0 and t < 0. Exact diagonalization calculations are found to be consistent with the predictions of the effective model. Further calculations confirm that the sign of t is rendered inconsequential due to the gauge invariance for g in the regime |t| << V . The charge-order melting metal-insulator transition is studied through density-matrix renormalization group calculations. The opening of the energy gap is found to differ for the two signs of t, reflecting the difference in the band structure at the Fermi level in each case. The qualitative nature of transition in each case is discussed. As a step towards a realization of the model in experiment, density-density correlation functions are introduced and such a calculation is shown for the plaquette phase for the effective model Hamiltonian at 1/3 filling in the absence of defects. Finally, the open problem of statistics of the fractional charges is discussed.