Transverse mode control of a vertical-cavity surface-emitting laser (VCSEL) is achieved by spatially filtered optical feedback. The spatial filter consisted of a pinhole, either 42 pm or 81 pm, in the 5.8x magnified VCSEL image plane of a confocal lens arrangement. The pinhole was translated to map out the voltage drop across the VCSEL from spatially-selective feedback. For low injection currents, spatially filtered feedback enabled single fundamental mode operation due to higher-order mode suppression by appropriately locating the pinhole. For higher injection currents with five laser modes, spatial selection of feedback enabled control of the relative mode intensities and wavelengths. The maximum increase in mode intensity achieved was 1.8x for the 42 pm pinhole and 2.-1 . for the 81 µm pinhole. The maximum frequency shift achieved was -2.7 GHz and -7.1 GHz with the 42 p.m and the 81 pm pinholes. The spatially-selective optical feedback produced long-lived changes to the VCSEL even after the feedback was blocked - results for two separate trials where the recovery time was 38 minutes are presented (although results varied for different bias and feedback conditions).

The aim of this thesis was to analyze the formation of defects in a given casting of ductile cast iron EN - GJS - 600-3 cast in sand molds bentonite, which is formed jolting with coining and then find a solution to remedy these defects. To resolve this issue, the influence of the composition of the sand mixture, the effect of metal flow in a cavity forms and the influence of deoxidation of metal in the presence of defects. Obtained results showed the importance of the influence Reoxidation metal cavity mold. Specifically, in this case succeeded in reducing the incidence of PINHOLES. Removal of PINHOLES to achieve deoxidation aluminum melt. This has reduced the production of nonconforming castings under 3% from the original 6.5%.

Les semi-conducteurs III-V à base d’azote et leurs alliages possèdent des propriétés remarquables et sont largement étudiés depuis les années 90. En comparaison à d'autres semi-conducteurs III-V, Les alliages de type ; AlGaN, InGaN et AlInN, ont leurs bandes interdites, directes, du lointain ultra-violet au proche infrarouge. Ainsi, ils sont appropriés pour de nombreuses applications dans des domaines tant civils que militaires tout en montrant de meilleures performances. De plus, l'alliage quaternaire AlGaInN montre des propriétés intéressantes car il peut être épitaxié soit avec un paramètre de maille ou une polarisation ou une bande interdite accordé au GaN. De plus, avec AlInN, ces deux alliages pourraient, à terme, remplacer les barrières conventionnelles AlGaN/GaN pour les applications aux Transistors à Haute Mobilité Électroniques (HEMT) grâce à des performances supérieures prouvées théoriquement.Dans ce travail, nous avons étudié les alliages AlInN et AlGaInN dont la croissance a été faite par épitaxie en phase vapeur d’organométalliques (MOVPE). Pour cela, la microscopie électronique en transmission a été notre principal outil de caractérisation. Le but était de caractériser les défauts et les mécanismes de croissance pendant la MOVPE. Dans cette optique, l'incorporation de gallium dans la barrière en raison de la géométrie de la chambre de croissance menant à un alliage quaternaire a été étudiée. Le contrôle du taux de gallium est réalisé soit par un processus de nettoyage entre les épitaxies soit par les conditions de croissance. Les défauts ont été ensuite différenciés comme extrinsèques et intrinsèques. En effet, les dislocations et les domaines d'inversion dans le GaN produisent des défauts extrinsèques, tandis que, les « pinholes » non connectés aux dislocations et les « hillocks » responsables de la rugosité de surface sont définis comme intrinsèques. Les origines des défauts intrinsèques dépendent fortement des propriétés physiques des composés parents binaires. Ces dégradations systématiques sont observées même lorsque les conditions de croissance sont optimisées et quand la composition du film mince est changée ou son épaisseur augmentée.Notre travail propose des mécanismes différents pour expliquer les processus de dégradation pour les différents défauts observés et constitue donc un pas en avant pour la réalisation de HEMT à base de AlInN et AlGaInN de meilleure qualité. / Group III-Nitrides and their alloys exhibit outstanding properties and are being extensively investigated since the 90’s. In comparison to other III-V semiconductors, III-nitrides (AlGaN, InGaN, and AlInN) cover from deep ultraviolet (UV) to near infrared (IR) across the visible range of wavelengths. Thus, they are suitable for numerous applications both in civilian and military fields showing higher performances. Moreover, the quaternary alloy AlGaInN shows versatile properties as it can grow either lattice or polarization or bandgap matched to GaN. Alongside to AlInN, these two alloys are expected to replace conventional AlGaN/GaN High Electron Mobility Transistors (HEMT) barriers as higher performances have been theoretically demonstrated.In this work, we have studied AlInN and AlGaInN grown by metal organic vapor phase epitaxy (MOVPE) using mainly TEM. The aim was to characterize defects and the MOVPE growth alloying process. In this instance, the gallium incorporation in the barrier due to the geometry of the growth chamber leading to a quaternary alloy was studied. The control of the gallium content is achieved by a cleaning process between runs or by the growth condition. Defects were then differentiated as extrinsic and intrinsic. In this way, dislocations and inversion domains from the GaN buffer layer generate extrinsic defects, while, pinhole not connected to dislocations and individual hillocks responsible of surface roughening are termed as intrinsic. The origins of the latter defects depend strongly on the physical mismatches of the end-binary compound. These systematic degradations happen also with optimized growth conditions as soon as the nominal composition is changed and/or the thickness is increased.Our work proposes different mechanisms to explain defects generation processes which constitutes a forward step for higher quality HEMTs.

A content of this thesis is an analysis of a steel castings production mismatch in Tatra Metallurgy foundry. Most common defects found on castings are gas holes. Thesis shows a theoretical research on casting defects caused by gases in steel castings. It also describes melting and degassing problematics of molten steel and procedures to reduce gas contents. The last part of theoretical research describes oxidation of steel in contact with silica mold. Practical part of thesis analysis production of steel castings to determine the cause of origin of gas holes. Main attention is paid to mold mixture, chemical composition, casting temperatures and casting time. The last chapter metallographically analysis two defected castings to determine the origin of defects. Main attention is paid to shape and chemical composition of gas holes and to morphology of steel inclusions.