Current AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) make use of multiple sources, drains, and gates in parallel to maximize transconductance and effective gain while minimizing the current density through each channel. To connect the sources to a common ground, current practice prescribes the fabrication of air bridges above the gates and drains. This practice has the advantage of a low dielectric constant and low parasitic capacitance, but it is at the expense of manufacturability and robust device operation. In the study described below, the air bridges in AlGaN/GaN HFETs were replaced by a polymer supported metallization bridge with the intention of improving ease of fabrication and reliability. The DC, high frequency, and power performance for several polymer step heights were investigated. The resultant structures were functional and robust; however, their electrical performance was degraded due to high source resistance. The cause of the high source resistance was found to be thinning of the metallization at the polymer step. The effect was more pronounced for higher step heights. / Master of Science

The goal of more efficiently and more reliably realizing energy conversion in the power electronics industry is pushing the limits of current wire bonding packaging technology. Emerging three-dimensional power packaging techniques have shown their potential to replace wire bonding technology down the road. However, these innovative technologies have not yet been fully understood in terms of thermal and thermo-mechanical performance. Therefore, a comparative evaluation between the thermally induced response in conventional wire bonding (a 2-Dimensional technology) and 3-Dimensional packaging technologies is essential. Thermal and thermo-mechanical analysis using the Finite Element Method (FEM) has been performed to evaluate a three-dimensional power module packaged in a Metal Post Interconnected-Parallel Plate Structure (the MPIPPS), and the result is compared with that of a wire bond module. Under the same single-sided cooling conditions, thermal modeling results show a significantly lower junction temperature of 17oC in the MPIPPS module than that in the wire bond module, due to the more uniform heat flow distribution in the MPIPPS module. The top DBC (direct bonded copper) substrate in the MPIPPS module helps direct the excessive heat generated from IGBT (Insulated Gate Bipolar Transistor) chips to diode chips (which dissipates less heat). The maximum junction temperature is reduced to 108 oC in the MPIPPS module by the implementation of double-sided cooling, which the wire bonding technique can not achieve. Subsequent thermo-mechanical analysis reveals the weak points in both modules during temperature cycling and power cycling. In the wire bond module, temperature cycle results have shown more severe stress and strain than that those of the power cycling conditions in the regions where the wires attach the device emitter pads. In the MPIPPS module, the solder joints exhibit high plastic and creep deformation. Power cycling produces more inelastic deformation at the solder joints between the posts and device, due to local over-heating, which causes more severe high-temperature creep deformation. Using a deformation-based thermal fatigue theory, the solder joint fatigue lives are predicted. Compared with the commercial wire bond module temperature cycle test, the fatigue life of MPIPPS is limited. We conclude that the MPIPPS module is better in thermal management but is thermo-mechanically less reliable than the wire bond module. / Master of Science

M.S.

Two issues pertinent to magamp post regulator are treated in this thesis. One of the issues considered is the operation of a magamp under extreme loading conditions. Practical design equations are derived to allow magamp operation under extreme load conditions such as shutdown of output, foldback of output current and very light load (discontinuous operation). The other issue considered concerns with magamp post regulation for a quasi-resonant converter. A magamp circuit is proposed, designed and tested for a zero current switching quasi-resonant forward converter. It demonstrates that output regulation in a quasi-resonant converter can be achieved with a fixed switching frequency operation. It also demonstrates the feasibility of multiple regulated output application of a quasi-resonant converter. / Master of Science

State-plane technique was adopted for analysis of a class of resonant de to de power converters. A comprehensive method was developed to understand the complex operation of a resonant converter, identify its operating modes along with their regions of occurrence and determine the de characteristics of the converter in each mode. The method was shown by application to a series resonant converter (SRC), a parallel resonant converter (PRC) and the family of quasi resonant converters (QRCs). Several major conclusions were experimentally verified. By suitably modifying the method, the effect of parasitic losses on the performance of a SRC was also studied. The operating regions where significant deviations in de characteristics occurred due to losses were also identified. In addition, from the mode and de analysis of a PRC, a novel resonant buck converter with de gain almost insensitive to load variations was proposed. Generalized mode and de analysis applicable to all QRC topological variations were performed using state-plane diagrams. Four sets of mode and de analyses were shown to be adequate to characterize the steady-state operation of nearly a hundred QRC variations. This simplified the understanding and analysis of these converters. Also, two simple circuit rules were introduced using which several QRC topological variations were generated and evaluated based on relative component stresses. The state-plane technique was also used to understand and evaluate different control methods of a SRC. The occurrence of large, undesirable tank energy surges with analog-signal-to-discrete-time-interval-converter (ASDTIC) control was investigated and explained using state-plane trajectories. A new control method called #optimal trajectory control*, which attempts to achieve the fastest response possible was proposed. By exploiting the structure of SRC state portrait, the tank energy is always kept within bounds with this control. Experimental implementation was discussed in detail along with experimental oscillograms which confirm the predicted fast response. / Ph. D.

The Switched Reluctance Motor (hereafter referred to as SRM) requires rotor position information for successful operation. The rotor position, in the present day, is obtained through a mechanical/electrical sensor mounted on the rotor shaft. These transducers are expensive and take additional space on the rotor shaft. An alternative scheme of rotor position sensing is proposed in this thesis which overcomes the disadvantages of existing position sensors. This is achieved by injecting a high frequency control level signal on the stator windings and measuring the response. The response is an indirect measure of the rotor position. The principle, design, and implementation of the sensor is described in this thesis. The proposed sensor is inexpensive compared to the available sensors and is expected to find applications in small and medium size SRM drives. / Master of Science

Electricity is the fastest-growing type of end-use energy consumption in the world, and its generation and usage trends are changing. Hence, the power electronics that control the flow and conversion of electrical energy are an important research area. Advanced power electronics with improved efficiency, power density, reliability, and functionality are critical in data center, transportation, motor drive, renewable energy, and grid applications, among others. Wide-bandgap power semiconductors are enabling power electronics to meet these growing demands, and have thus begun appearing in commercial products, such as traction and solar inverters. Looking ahead, even greater strides can be made in medium-voltage systems due to the development of silicon carbide power devices with voltage ratings exceeding 10 kV. The ability of these devices to switch higher voltages faster and with lower losses than existing semiconductor technologies will drastically reduce the size, weight, and complexity of medium-voltage systems. However, these devices also bring new challenges for designers. This dissertation will present a package for 10 kV silicon carbide power MOSFETs that addresses the enhanced electric fields, greater electromagnetic interference, worsened dynamic imbalance, and higher heat flux issues associated with the packaging of these unique devices. Specifically, due to the low and balanced parasitic inductances, the power module prototype is able to switch at record speeds of tens of nanoseconds with negligible ringing and voltage overshoot. An integrated common-mode current screen contains the current that is generated by these fast voltage transients within the power module, rather than flowing to the system ground. This screen connection simultaneously increases the partial discharge inception voltage by reducing the electric field strength at the triple point of the insulating ceramic substrate. Further, field-grading plates are used in the bus bar to reduce the electric field strength at the module terminations. The heat flux is addressed by employing direct-substrate, jet-impingement cooling. The cooler is integrated into the module housing for increased power density. / Ph. D. / Electricity is the fastest-growing type of end-use energy consumption in the world, and its generation and usage trends are changing. Hence, the power electronics that control the flow and conversion of electrical energy are an important research area. Advanced power electronics with improved efficiency, power density, reliability, and functionality are critical in data center, transportation, motor drive, renewable energy, and grid applications, among others. Wide-bandgap power semiconductors are enabling power electronics to meet these growing demands, and have thus begun appearing in commercial products, such as traction and solar inverters. Looking ahead, even greater strides can be made in medium-voltage systems due to the development of silicon carbide power devices with voltage ratings exceeding 10 kV. The ability of these devices to switch higher voltages faster and with lower losses than existing semiconductor technologies will drastically reduce the size, weight, and complexity of medium-voltage systems. However, these devices also bring new challenges for designers. This dissertation will present a package for 10 kV silicon carbide power MOSFETs that addresses the enhanced electric fields, greater electromagnetic interference, worsened dynamic imbalance, and higher heat flux issues associated with the packaging of these unique devices. Specifically, due to the low and balanced parasitic inductances, the power module prototype is able to switch at record speeds of tens of nanoseconds with negligible ringing and voltage overshoot. An integrated common-mode current screen contains the current that is generated by these fast voltage transients within the power module, rather than flowing to the system ground. This screen connection simultaneously increases the partial discharge inception voltage by reducing the electric field strength at the triple point of the insulating ceramic substrate. Further, field-grading plates are used in the bus bar to reduce the electric field strength at the module terminations. The heat flux is addressed by employing direct-substrate, jet-impingement cooling. The cooler is integrated into the module housing for increased power density.

GaN has the potential to revolutionize the high power electronics industry, enabling high voltage applications and better power conversion efficiency due to its intrinsic material properties and newly available high purity bulk substrates. However, unintentional impurity incorporation needs to be reduced. This reduction can be accomplished by reducing the source of contamination and exploration of extreme growth conditions which reduce the incorporation of these contaminants. Newly available bulk substrates with low threading dislocations allow for better study of material properties, as opposed to material whose properties are dominated by structural and chemical defects. In addition, very thick films can be grown without cracking due to exact lattice and thermal expansion coefficient match. Through chemical and electrical measurements, this work aims to find growth conditions which reduces contamination without a severe impact on growth rate, which is an important factor from an industry standpoint. The proposed thicknesses of these devices are on the order of one hundred microns and requires tight control of the intentional dopants. / Doctor of Philosophy / GaN is a compound semiconductor which has the potential to revolutionize the high power electronics industry, enabling new applications and energy savings due to its inherent material properties. However, material quality and purity requires improvement. This improvement can be accomplished by reducing contamination and growing under extreme conditions. Newly available bulk substrates with low defects allow for better study of material properties. In addition, very thick films can be grown without cracking on these substrates due to exact lattice and thermal expansion coefficient match. Through chemical and electrical measurements, this work aims to find optimal growth conditions for high purity GaN without a severe impact on growth rate, which is an important factor from an industry standpoint. The proposed thicknesses of these devices are on the order of one hundred microns and requires tight control of impurities.

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