Thesis (M.S.)--Rochester Institute of Technology, 1991. / Typescript. Includes bibliographical references (leaf 35).

Thesis (M.S.)--Rochester Institute of Technology, 1993. / Typescript. Includes bibliographical references (leaf [82]).

Orientador: Neri Alves / Resumo: Nesta tese de doutorado são apresentados resultados a respeito da fabricação e caracterização de dois tipos de transístores com eletrólito no gate (EGTs, do inglês Electrolyte Gated Transistors): Transístores eletroquímicos orgânicos (OECTs, do inglês Organic Electrochemical Transistors) e transístores de dupla camada elétrica (EDLTs, do inglês Electric Double Layer Transistor). Os dispositivos foram produzidos utilizando inkjet printing e screen printing para imprimir soluções à base de polímeros como o poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), precursores de óxido de zinco e de nanopartículas de óxido zinco. Como eletrólito de gate foram utilizadas faixas auto sustentáveis de íon gel à base de celulose. Esse último foi desenvolvido por pesquisadores do CEMOP/CENIMAT e combina a alta mobilidade iônica dos eletrólitos líquidos com a plasticidade dos eletrólitos sólidos. Sua estrutura em gel possibilita que o material seja moldado ou cortado de acordo com a aplicação. Os ECTs foram fabricados em arquitetura planar sobre substrato de vidro ou de papel, onde foram impressos: PEDOT:PSS como semicondutor e carbono como eletrodos. Os resultados mostram uma forte dependência de parâmetros como: corrente no estado ligado (Ion), no estado desligado (Ioff), transcondutância, razão Ion/Ioff, morfologia da superfície do substrato e a rugosidade. Os EDLTs foram fabricados usando síntese de auto combustão e foto-ativação química para produzir dispositivos com baix... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: On this doctoral thesis is presented results of the manufacture and characterization of two types of Electrolyte-gated Transistors (EGTs): Organic Electrochemical Transistors (OECTs) and electric double-layer transistors (EDLTs). Devices were manufactured using inkjet printing and screen printing to print solutions based on polymers such as poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT: PSS), zinc oxide precursors and zinc oxide nanoparticles. Self-sustainable bands of cellulose-based ion gel were used as gate electrolyte. The last was developed by researchers from CEMOP/CENIMAT and combines the high ion mobility of liquid electrolytes with the plasticity of solid electrolytes. This gel structure allows this material to be shaped or cut according to the application. The ECTs were manufactured in planar architecture over glass or paper substrates, where they were printed: PEDOT: PSS as semiconductor and carbon as electrodes. The results presents a strong dependence on parameters such as: on-state current (Ion), off-state current (Ioff), transconductance, Ion/Ioff ratio, surface morphology of the substrate and roughness. The EDLTs were manufactured using auto-combustion synthesis and chemical photo-activation process to produce devices with low processing temperatures in a way to be used in flexible, plastic or paper substrates. These devices are based on nanoparticles of zinc oxide as a semiconductor channel, fully printed and with heat treatment below 200 oC.... (Complete abstract click electronic access below) / Doutor

Thesis (M.S.)--Rochester Institute of Technology, 1996. / Typescript. Includes bibliographical references (leaf 31).

Le recuit photonique est une technologie émergente basée sur la conversion instantanée del’énergie lumineuse absorbée par les nanoparticules (NPs) en chaleur. Dans ces travaux, il estdéployé sur des pistes d’interconnexions imprimées sur support souple par jet de matière, àpartir d’une encre de NPs d’argent (Ø=25nm).Une étude des paramètres du procédé a permis d’établir le lien entre ces derniers (énergie,fréquence) et la résistance carrée (120m!/ ) induite. Celui-ci a été confirmé grâce à unemodélisation thermique multicouches et au développement d’une instrumentation inéditemesurant, toutes les 4μs, les variations de la résistance pendant le recuit photonique (quelquesms). La stabilisation de la résistance corrélée avec les propriétés optiques du film est optimalepour une exposition de 2-3J/cm² induisant un échauffement à environ 200°C.L’analyse de la microstructure des films par diffraction des rayons X met en évidence le lienentre la croissance des cristallites et la résorption des défauts. La minimisation de la résistanceélectrique est corrélée à la croissance du collet entre les nanoparticules par diffusion atomiquede surface. De plus, une meilleure cohésion des NPs améliore la dureté par rapport au recuit àl’étuve.La résistance électrique de contact (200m!) entre les plots d’interconnexion d’une puce ensilicium et les pistes imprimées a été mesurée grâce à un montage dédié de mesure électriqueau nano-indendeur. Les forces à appliquer (300mN par bump) / Photonic sintering is an emerging technology based on the instantaneous conversion ofabsorbed light energy by nanoparticles (NPs) into heat. In this work, it is used oninterconnections printed on flexible substrates by inkjet printing of a metal silver nanoinkwith particle mean diameter of Ø=25nm.A process parameters study has allowed us to link them (energy, frequency) with theinduced sheet resistance (120m!/ ). This has been confirmed through thermal modeling ofthe multilayer system, and also by monitoring the resistance variations in-situ duringphotonic sintering (a few ms) using an innovative characterization tool, allowingmeasurements every 4 μs. The electrical resistance stabilization correlated with the opticalproperties of the film was found to be optimal for an exposition of 2-3J/cm², whichcorresponds to heating up to approximately 200°C.Films microstructure analysis with X-ray diffraction enlightens the link between crystallitescoarsening and defaults density reduction. The minimization of electrical resistivity iscorrelated with neck growth between nanoparticles trigged by surface atomic diffusion.Moreover, a stronger cohesion between NPs improves the mechanical hardness compared toclassical oven curing.The electrical contact resistance (200m!) between a silicon chip interconnection bumpand printed tracks is measured thanks to an in-house setting for electrical measurement withthe nanoindenter. The level of forces to apply (300mN per bump) is optimized and transferredto a thermocompression by industrial equipment. A set of prototypes are fabricated andconfirm the compatibility of these technologies with a future industrial integration.