Semiconductor nanocrystals are expected to play an important role in the development of new generation of microelectronic and photonic devices such as light emitting diodes and memory elements. Optimization of these devices requires detailed investigations. Various spectroscopic techniques have been developed for material and devices characterization. This study covers the applications of the following techniques for the analysis of nanocrystalline materials: Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, X-Ray Diffraction (XRD) and X-Ray Photoelectron (XPS). Transmission Electron Microscopy (TEM) and Secondary Ion Mass Spectrometry (SIMS) are also used as complementary methods. Crystallinity ratio, size, physical and chemical environment of the nanostructures were probed with these methods. Si and Ge nanocrystals were formed into the oxides Al2O3 and SiO2 by ion implantation, magnetron sputtering and laser ablation methods. FTIR and XPS are two methods used to extract information on the surface of the nanocrystals. Raman and XRD are non destructive and easy-to-operate methods used widely to estimate the crystallinity to amorphous ratio and the sizes of the nanocrystals. In this study, the structural variations of SiO2 matrix during the formation of Si nanocrystals were characterized by FTIR. The shift in position and changes in intensity of the Si-O-Si asymmetric stretching band of SiOx was monitored. An indirect metrology method based on FTIR was developed to show the nanocrystal formation. Ge nanocrystals formed in SiO2 matrix were investigated using FTIR, Raman and XRD methods. FTIR spectroscopy showed that Ge atoms segregate completely from the matrix at relatively low temperatures 900 oC. The stress between the Ge nanocrystals and the matrix can vary in samples produced by magnetron sputtering if the production conditions are slightly different. Si and Ge nanocrystals were formed into Al2O3 matrix by ion implantation of Si and Ge ions into sapphire matrix. Raman, XRD, XPS and TEM methods were employed to characterize the formed nanocrystals. XRD is used to estimate the nanocrystal sizes which are in agreement with TEM observations. The stress on nanocrystals was observed by Raman and XRD methods, and a quantitative calculation was employed to the Si nanocrystals using the Raman results. XPS and SIMS depth profiles of the sample implanted with Si, and annealed at 1000 oC were measured. Precipitation of Si atoms with the heat treatment to form the nanocrystals was observed using XPS. The volume fraction of the SiOx shell to the Si core in Si nanocrystals was found to be 7.9 % at projection range of implantation.

In this study, photoluminescence properties of as grown, Ge implanted GaSe and InSe crystals with doses 1013, 1014, and 1015 ions/cm2 and 1015 ions/cm2 Ge implanted and annealed GaSe and InSe single crystals grown by using 3-zone vertical Bridgman-Stockbarger system have been studied by photoluminescence spectroscopy (PL). PL spectra of as grown and implanted GaSe samples with three different doses have been studied in the ranges within the wavelength interval 570-850 nm and in the temperature ranges between 21 and 110 K. Temperature dependencies of all observed bands revealed that the peak with highest energy has excitonic origin and most of the others originate from donor-acceptor pair recombination. For GaSe samples implanted with 1013 and 1015 ions/cm2 Ge, PL spectra exhibited four emission bands while for as grown and the sample implanted with 1014 ions/cm2 v Ge had three bands. Variations of emission peaks were studied as a function of temperature. It was observed that centers of all bands shifted towards red continuously with temperature. The intensities of the emission peaks showed similarities with those obtained from as grown, 1013 and 1014 ions/cm2 Ge implanted GaSe while the peak intensities of the sample implanted with 1015 ions/cm2 Ge decreased with the temperature continuously. Using the temperature variation of the peak intensities and peak energy values activation energies were obtained and these results revealed that the two bands with low wavelength to be excitonic origin for the implanted samples with the doses 1013 and 1015 ions/cm2 Ge. Similar results were obtained for the implanted with 1015 ions/cm2 Ge and annealed sample. The other two peaks observed for these samples were attributed to donor acceptor pair transitions. In addition, direct band gaps were found to be 2.12 eV at 32 K for as grown, 2.121 eV at 25 K for 1013 ions/cm2 Ge implanted, 2.121 eV at 21 K for 1014 ions/cm2 Ge implanted, 2.124 eV at 33 K for 1015 ions/cm2 Ge implanted GaSe samples and lastly 2.113 eV at 28 K for 1015 ions/cm2 Ge implanted and annealed GaSe. PL spectra of as grown, 1013, 1014, 1015 ions/cm2 Ge implanted, and 1015 ion/cm2 Ge implanted and annealed InSe samples were also obtained at 20 K. Two broad bands were observed in the spectrum of all InSe crystals and considered to be due to impurity levels within the materials.

Amorphous Silicon alloy thin films were deposited by plasma enhanced chemical vapor deposition technique. In order to make optoelectronic measurements, diode structures were fabricated by depositing transparent metal electrodes. Theoretical background of localized density of states in the mobility gap and photocurrent mechanisms has been revisited. In light of this, time of flight technique, using transient photocurrent, was utilized to determine mobility in extended states and characteristic energy of tail states in the film. The actual density of states (DOS) in the mobility gap of the deposited films was determined by using absorption coefficients obtained via constant photocurrent measurements. Finally, adverse effects of small Oxygen incorporation on mobility and DOS were observed.

This thesis examines the luminescence properties of nanoscale silicon (Si) by using spectroscopic techniques. Since the development of new optical devices requires understanding light emission mechanism optical spectroscopy has become more important tool in the analysis of these structures. In this thesis, Si nanocrystals embedded in SiO2 matrix will be studied. Photoluminescence (PL) and Time-resolved photoluminescence spectroscopy (TRPL) have been used to detect the light emission in UV-Vis-NIR range. Experiments have been performed in the temperature range 10-300 K. PL is sensitive to impurities and defects that affect materials quality and device performance. In this context, the role of defects in limiting the luminescence of Si nanocrystals and the removal of these defects by hydrogen passivation has been investigated. v TRPL was employed to determine the time evolution of photoluminescence as function of temperature. The decay time of the PL spectra was determined by a stretched exponential function and perfectly fitted to an expression based on three excitonic levels. Carrier lifetimes associated with these three levels were determined and compared with literature. Additionally, temporal variation of PL from free-standing Si nanoparticles is studied under a strong laser illumination. The observed bleaching behavior (time dependent emission intensity), which is reversible, have discussed in terms of exciton trapping at the interface between nanocrystal and the surrounding oxide layer. The results of this thesis will provide new insight on the understanding of light emission mechanism of Si nanocrytals.

EDS is a tool for quantitative and qualitative analysis of the materials. In electron microscopy, the energy of the electrons determines the depth of the region where the X-rays come from. By varying the energy of the electrons, the depth of the region where the X-rays come from can be changed. If a thin film is used as a specimen, different quantitative ratios of the elements for different electron energies can be obtained. Unique thickness of a specific film on a specific substrate gives unique energy-ratio diagram so the thickness of a thin film can be calculated by analyzing the fingerprints of the energy-ratio diagram of the EDS data obtained from the film.

Luminescence is the emission of light resulting from radiative transition of an atom from an excited state to a ground state. This radiative transition yields emission of photons and the luminescence is the general name which is used to classify &ldquo / cold emission&rdquo / other than the blackbody radiation. Spectroscopy involves the measurement of intensity of emitted, absorbed or scattered electromagnetic radiation as a function of wavelength. Thus, it is a valuable tool in the study of understanding the luminescence production mechanisms. Measurement of emission spectra gives information about the energy levels of transition and structure, geometry and composition of the sample. In this study, a versatile luminescence emission spectrometer was designed and developed with the main aim of measuring Photoluminescence (PL), Thermoluminescence (TL) and Optically Stimulated Luminescence (OSL) emission spectra of materials relevant for dosimetry. The spectrometer was constructed around a Littrow type monochromator by developing the necessary hardware, firmware and software. Wavelength calibration, measurement of spectral response and determination of resolution of the spectrometer were done using calibration lamps and a calibrated spectroradiometer. Finally the performance of the constructed spectrometer was tested by measuring the emission spectra of materials such as BeO, Al2O3 and CaF2 wherever possible the measured spectra were compared with the ones reported in the literature.

Laser Induced Breakdown Spectroscopy (LIBS) which is used to determine the elemental content of various samples, inspects the emission spectroscopy of samples of interest for searching certain elements or identifying the unknown content. In this study, spectroscopic analyses of various kinds of metals, namely, Cu, Fe, Mo, Ti, W, some compounds such as CuBe, ZnSe, ZnS, GaSe, some semimetals like Si, Ge and even gases were investigated by means of a compact-commercial portable LIBS system and an independently constructed experimental set-up consisting of a single pulse system and various kinds of double pulse configurations using Nd:YAG lasers. The contributions of this thesis to the LIBS community can be classified into two main groups- which are experimental and code development. One of the experimental contributions was the investigation of the different crystal surfaces of silicon in which dangling bond density were taken into account for a more precise comparison of atomic emissions. The second experimental contribution was the polarization experiments by which polarization dependency, to some extent, was demonstrated. The third and final one was the orthogonal double pulse configuration with a 45 o incidence angle for both lasers in opposite directions by which it was shown that the positioning becomes straightforward yielding the desired reproducible results. The second major contribution was to develop a basic code for analyzing the experimental data more accurately. In conclusion, by means of the different experimental approaches, factors relating to the enhancement in intensity were investigated and as a result of developing the code, flexibility in upgrading the constraints of element searching was obtained and the updating of the database was accomplished.

In this study, suspensions of metallic nanoparticles in base fluids, nanofluids, are investigated by using terahertz time domain spectroscopy (THz-TDS). Nanofluids are used as the working fluid in a variety of applications especially for the purpose of heat transfer enhancement. Polar fluids are being used as the base in nanofluids for their tendency to stop aggregation and sedimentation. Polar fluids highly absorb THz signal. In order to select the best possible host, various polar liquids have been investigated, and isopropanol (99.5%) is selected to be the best candidate for its low THz absorptivity when compared to ethanol (99.5%), ethylene glycol (99%), methanol (95%) and distilled water. Ag, Pd and Cu nanoparticles have been custom-made in isopropanol by laser ablation method, and the size distributions have been characterized by Zeta Potential Analyzer. The nanoparticle diameters are measured to be on average 10 nm, 12 nm and 75 nm for Ag, Cu and Pd, respectively. Nanofluids of 1X, 2X and 3X concentrations of Ag, Cu and Pd nanoparticles have been prepared by diluting with pure (99.5%) isopropanol. Measurements have been repeated after 7 days up to 12 days in order to check for aggregations and sedimentations. THz-TDS is a strong tool to analyze the refractive index and absorption coefficient, but no distinct difference was observed in the frequency domain analysis for the nanofluid samples. On the other hand, in the time domain data analysis, a shift on the time data with a change in transmission was observed. For Ag nanoparticles a positive time shift with a decrease in transmission with increasing concentration was observed. For Cu nanoparticles an interesting negative time shift and an increase in the intensity was observed with increasing concentration. The Pd nanoparticle solution scans showed almost no shift initially, but a negative time shift after a wait period on the order of days. A model of the transmission of the THz pulse through the nanofluid was developed based on transmission/reflection coefficients due to both dielectric and conducting layered media. The model well explains the positive time shift seen with Ag nanoparticle suspensions but fails to explain the shift seen with the Cu nanoparticle suspensions due to the long path length inside the nanofluid. Negative time-shifts can only be explained by decreasing the path length which suggests additional layering inside the nanofluid medium, or assuming that the chemical composition of the isopropanol host has changed with the addition of Cu and/or Pd nanoparticles. The positive time shifts observed with the Ag nanoparticle suspensions allowed for estimating the change in refractive index of the base fluid. From this change, using effective medium theory based on Maxwell-Garnett model, the concentrations of the nanoparticles were estimated. The results agree within an order of magnitude to commercially available nanofluids which are also non-aggregate.

The results of photoluminescence (PL) spectra of TlGaS2 single crystal were reported in the 500-1400 nm wavelength and in the 15-115 K temperature range. Three broad PL bands with an asymmetric Gaussian lineshapes were observed to be centered at 568 nm (A-band), 718 nm (B-band) and 1102 nm (C-band). The shift of the emission band peak energy as well as the change of the half-width of the emission band with temperature and excitation laser intensity were also studied. We analyzed the observed results using the configurational coordinate (CC) model. The powder diffraction patterns of TlInS2 and TlGaS2 crystals were obtained and the diffraction data were indexed using CRYSFIRE computer program packet. TlInS2 has hexagonal system with parameters a = 3.83 and c = 14.88 Ao. TlGaS2 has monoclinic system with parameters a = 9.62, b = 4.01 and c = 7.52 Ao with &amp / #946 / = 96.30o. Our diffraction studies at low temperatures did not reveal any phase transition for TlInS2 as reported in the literature. The specific heat capacities of both TlInS2 and TlGaS2 crystals calculated from Differential Scanning Calorimetry (DSC) measurements at low temperatures are reported in the thesis.

New and rapid techniques for the characterization and identification of bacteria would have an important role in clinical microbiology and in food analysis because of an increasing prevalence of infectious diseases and In this work we carried out two approaches. In the first study the characterization and differentiation of mesophilic and thermophilic bacteria were investigated by using Fourier Transform Infrared (FTIR) Spectroscopic technique. In the second study, we investigated the characterization and identification of 3 Bacillus and Micrococcus species Our results from first approach show that there was a dramatic difference between mesophilic and thermophilic bacteria. The protein concentration was high, lipid concentration, the level of triglycerides and the unsaturated acyl chains decreased in thermophilic bacteria. We found that in thermophilic bacteria PO- 2 groups become hydrogen bounded. In addition, our results suggest that the cellular DNA content was low in thermophilic bacteria. Moreover there were characteristic peaks for both mesophilic and thermophilic bacteria and these peaks can be used for the differentiation of these two bacteria group. There were also some specific peaks that can be used for the differentiation of Escherichia coli and Lactobacillus plantarum at species level. In the second approach, our results show that there were significant spectral differences between Bacillus and Micrococcus species such as the proportion of unsaturated acyl chains in triglycerides were higher in Micrococcus species. Moreover we observed different bands that may be explained by an acetate oxidation via the tricarboxylic acid cycle and an exopolymer formation in Micrococcus species. In addition to that another band similar to glycogen, may be explained by a glycogen-like storage material in Micrococcus species. Also there are characteristic peaks that can be used for identification of Micrococcus spp.