High efficiency components are key elements of solid-state amplifiers for wireless application. We used HEMT (high-electron-mobility transistor) to obtain high mobility 2DEGs. AlGaN makes itself an attractive material for high frequency devices, and the system is particularly good for the investigation of quantum Hall effect. We studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikov-de Haas (SdH) measurement. The T-dependent Hall measurement (from 4.2 K to 300K) was performed at the magnetic field 0.3T and the B-dependent Hall measurement (from 0.02T to 0.8 T) at constant temperature. From the field-dependent Hall measurements, we are able to calculate the individual mobility and carrier concentration for the two-subband-populated AlxGa1-xN/GaN heterostructures. Then, we can use T-dependent Hall effect measurement to calculate the binding energy of the deep-level trap Ed,which is a measure of the energy constant for the ionization of deep-level trap in thermal equilibrium.