Title from PDF of title page (University of Missouri--Columbia, viewed on Feb 19, 2010). The entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file. Thesis advisor: Dr. Xudong Fan and Dr. Azlin Mustapha. Includes bibliographical references.

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The goal of this research work is to develop and analyze Quantum Dot (QD) lasers aimed at improving high power performance which is crucial for numerous scientific, military and industrial applications. Fundamentally two dissimilar types of lasers are investigated: namely bipolar electron-hole laser and unipolar quantum cascade laser. Planar quantum well (QW) laser diodes are already well-established as commercially available high power semiconductor lasers. However these lasers are unable to deliver power greater few 10's of watts due to reduction in efficiency at longer cavity lengths. This limitation arises from inherent optical losses tied to the two-dimensional density of available states in QWs. A novel approach is proposed here to circumvent this limitation by introducing self-assembled QDs into the laser cavity which due to their delta-like discrete density of states promise to reduce the optical losses by at least an order of magnitude, hence allowing cavity length to increase proportionally. Detailed analysis based on harmonic oscillator model and solution at quasi-equilibrium condition reveal that total internal losses as low as 0.05 per cm⁻¹ can be achieved in a QD laser enabling it to deliver 50 watts of power from each bar while maintaining efficiency close to 90%. In order to take full advantage of the discrete atom-like behavior, it is also of utmost importance to reduce the inhomogeneous broadening of the dot distribution originating from size fluctuation. Experimental data of ultra narrow linewidth InAs quantum dots having linewidth of only 22 meV is presented. Research attempt has been taken to integrate these narrowly distributed dots into a workable structure. Preliminary data shows that these dots are extremely sensitive to the laser material which calls for careful optimization of the entire structure. As for the unipolar QCL, it is shown that internal absorption caused by phonon emission of electrons in a planar quantum cascade laser represents a possible limitation to the maximum operating efficiency. Possibility of reducing this absorption is explored and it is optimistically asserted that introducing QDs into the gain stage of a QCL can eliminate this internal loss mechanism, thus greatly improving high power operating characteristics.

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published_or_final_version / abstract / toc / Physics / Master / Master of Philosophy

Colloidal quantum dot photovoltaics (CQDPV) offer a big potential to be a renewable energy source due to low cost and tunable band-gap. Currently, the certified power conversion efficiency of CQDPV has reached 9.2%. Compared to the 31% theoretical efficiency limit of single junction solar cells, device performances have still have a large potential to be improved. For photovoltaic devices, a classical way to enhance absorption is to increase the thickness of the active layers. Although this approach can improve absorption, it reduces the charge carriers extraction efficiency. Photo-generated carriers, in fact, are prone to recombine within the defects inside CQD active layers. In an effort to solve this problem, we proposed to increase light absorption from a given thickness of colloidal quantum dot layers with the assistance of disorder. Our approach is to develop new types of electrodes with multi-scale disordered features, which localize energy into the active layer through plasmonic effects. We fabricated nanostructured gold substrates by electrochemical methods, which allow to control surface disorder as a function of deposition conditions. We demonstrated that the light absorption from 600 nm to 800 nm is impressively enhanced, when the disorder of the nanostructured surface increases. Compared to the planar case, the most disorder case increased 65% light absorption at the wavelength of λ = 700nm in the 100 nm PbS film. The average absorption enhancement across visible and infrared region in 100 nm PbS film is 49.94%. By developing a photovoltaic module, we measured a dramatic 34% improvement in the short-circuit current density of the device. The power conversion efficiency of the tested device in top-illumination configuration showed 25% enhancement.