SiC has become an attractive wide bandgap semiconductor due to its unique physical and electronic properties and is widely used in high temperature, high frequency, high power and radiation resistant applications. SiC has been used as an alternative to Si in harsh environments such as in the oil industry, nuclear power systems, aeronautical, and space applications. SiC is also known for its polytypism and among them 3C-SiC, 4H-SiC and 6H-SiC are the most common polytypes used for research purposes. Among these polytypes 4H-SiC is gaining importance due to its easy commercial availability with a large bandgap of 3.26 eV at room temperature. Controlled creation of defects in materials is an approach to modify the electronic properties in a way that new functionality may result. SiC is a promising candidate for defect-induced magnetism on which spintronic devices could be developed. The defects considered are of room temperature stable vacancy types, eliminating the need for magnetic impurities, which easily diffuse at room temperature. Impurity free vacancy type defects can be created by implanting the host atoms of silicon or carbon. The implantation fluence determines the defect density, which is a critical parameter for defect induced magnetism. Therefore, we have studied the influence of low fluence low energy silicon and carbon implantation on the creation of defects in n-type 4H-SiC. The characterization of the defects in these implanted samples was performed using the techniques, RBS-channeling and Raman spectroscopy. We have also utilized these characterization techniques to analyze defects created in much deeper layers of the SiC due to implantation of high energy nitrogen ions. The experimentally determined depths of the Si damage peaks due to low energy (60 keV) Si and C ions with low fluences (< 1015 cm-2) are consistent with the SRIM-2011 simulations. From RBS-C Si sub-lattice measurements for different fluences (1.1×1014 cm-2 to 3.2×1014 cm-2) of Si implantation in 4H-SiC, the Si vacancy density is estimated to range from 1.29×1022 cm-3 to 4.57×1022 cm-2, corresponding to average vacancy distances of 4.26 Å to 2.79 Å at the damage peak (50±5 nm). Similarly, for C implanted fluences (1.85×1014 cm-2 to 1×1015 cm-2), the Si vacancy density varies from 1.37×1022 cm-3 to 4.22×1022 cm-3 with the average vacancy distances from 4.17 Å to 2.87 Å at the damage peak (110±10 nm). From the Raman spectroscopy, the implantation-induced lattice disorders calculated along the c-axis (LO mode) and perpendicular to c-axis (TO mode) in 4H-SiC are found to be similar. Furthermore, the results obtained from SQUID measurements in C implanted n-type 4H-SiC sample with fluences ranging from 1×1012 to 1.7×1016 ions/cm2 have been discussed. The implanted samples showed diamagnetism similar to the unimplanted sample. To date, to our best of knowledge, no experimental work has been reported on investigating defect induced magnetism for self-ion implantation in n-type 4H-SiC. These first reports of experimental results can provide useful information in future studies for a better understanding of self-ion implantation in SiC-based DMS.

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