Gao, Xin. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references (leaves 73-74). / Abstracts in English and Chinese. / Table of Contents --- p.vii / Table of Figures --- p.ix / List of Abbreviations --- p.xiii / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Overview --- p.1 / Chapter 1.2 --- Original Contributions --- p.5 / Chapter 1.3 --- Chapter Outlines --- p.5 / Chapter Chapter 2 --- Fundamentals of Stepped-impedance Resonators --- p.7 / Chapter 2.1 --- Introduction --- p.7 / Chapter 2.2 --- Structures of Stepped-impedance Resonators --- p.8 / Chapter 2.3 --- Resonance Conditions Analysis --- p.10 / Chapter 2.4 --- Spurious Resonance Frequencies --- p.12 / Chapter 2.5 --- Applications of Stepped-impedance Resonator Techniques --- p.14 / Chapter Chapter 3 --- Coupled line and Partially Coupled Stepped-impedance Coupled Lines --- p.15 / Chapter 3.1 --- Introduction --- p.15 / Chapter 3.2 --- Coupled Line Model --- p.17 / Chapter 3.3 --- Analysis of Coupled Line --- p.20 / Chapter 3.4 --- Analysis of Partially Coupled Stepped-impedance Coupled Lines --- p.28 / Chapter 3.5 --- Dual Band Properties of Partially Coupled Stepped-impedance Coupled Lines --- p.29 / Chapter Chapter 4 --- A Novel Dual Band Balun Using Partially Coupled Stepped-impedance Coupled Lines --- p.30 / Chapter 4.1 --- Introduction --- p.30 / Chapter 4.2 --- Theory of Balun --- p.31 / Chapter 4.3 --- Analysis of the Proposed Dual Band Baluns --- p.37 / Chapter 4.4 --- Design Case Study for the Proposed Dual Band Balun --- p.43 / Chapter 4.5 --- Discussion --- p.50 / Chapter 4.6 --- Fabrication of a Balun Working at 900 MHz and 1.8 GHz --- p.56 / Chapter Chapter 5 --- Conclusion --- p.61 / Appendix 1 --- p.62 / Bibliography --- p.73

by Hu Hai. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Abstracts in English and Chinese. / Author's Declaration --- p.ii / Abstract --- p.iii / Acknowledgements --- p.vi / Table of Contents --- p.viii / List of Figures --- p.xi / List of Tables --- p.xiv / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Background --- p.1 / Chapter 1.2 --- Overview of This Work --- p.2 / Chapter 1.3 --- Original Contributions in the Thesis --- p.3 / Chapter 1.4 --- Thesis Organization --- p.4 / Chapter Chapter 2 --- PEEC Modeling Background --- p.5 / Chapter 2.1 --- Introduction --- p.5 / Chapter 2.2 --- PEEC Principles --- p.6 / Chapter 2.3 --- Meshing Scheme --- p.10 / Chapter 2.4 --- Formulae for Calculating the Partial Elements --- p.12 / Chapter 2.4.1 --- Partial Inductance --- p.12 / Chapter 2.4.2 --- Partial Capacitance --- p.14 / Chapter 2.5 --- PEEC Application Example --- p.15 / Chapter 2.6 --- Summary --- p.17 / References --- p.18 / Chapter Chapter 3 --- Mathematical Model Order Reduction --- p.20 / Chapter 3.1 --- Introduction --- p.20 / Chapter 3.2 --- Modified Nodal Analysis --- p.21 / Chapter 3.2.1 --- Standard Nodal Analysis Method Review --- p.22 / Chapter 3.2.2 --- General Theory of Modified Nodal Analysis --- p.23 / Chapter 3.2.3 --- Calculate the System Poles Using MNA --- p.27 / Chapter 3.2.4 --- Examples and Comparisons --- p.28 / Chapter 3.3 --- Krylov Subspace MOR Method --- p.30 / Chapter 3.4 --- Examples of Krylov Subspace MOR --- p.32 / Chapter 3.5 --- Summary --- p.34 / References --- p.35 / Chapter Chapter 4 --- Physical Model Order Reduction --- p.38 / Chapter 4.1 --- Introduction --- p.38 / Chapter 4.2 --- Gaussian Elimination Method --- p.39 / Chapter 4.3 --- A Lossy PEEC Circuit Model --- p.44 / Chapter 4.3.1 --- Loss with Capacitance --- p.44 / Chapter 4.3.2 --- Loss with Inductance --- p.46 / Chapter 4.4 --- Conversion of Mutual Inductive Couplings --- p.47 / Chapter 4.5 --- Model Order Reduction Schemes --- p.50 / Chapter 4.5.1 --- Taylor Expansion Based MOR Scheme (Type I) --- p.51 / Chapter 4.5.2 --- Derived Complex-valued MOR Scheme (Type II) --- p.65 / Chapter 4.6 --- Summary --- p.88 / References --- p.88 / Chapter Chapter 5 --- Concluding Remarks --- p.92 / Chapter 5.1 --- Conclusion --- p.92 / Chapter 5.2 --- Future Improvement --- p.93 / Author's Publication --- p.95

In high-frequency circuit design, performance is often limited by the quality of the passive components available for a particular process. Specifically, spiral inductors can be a major bottle-neck for Voltage-Controlled Oscillators (VCOs), Low-Noise Amplifiers (LNAs), mixers, etc. For designers to correctly optimize a circuit using a spiral inductor, several frequency-domain characteristics must be known including the quality factor (Q), total inductance, and the self-resonant frequency. This information can be difficult to predict for spirals built on lossy silicon substrates because of the complicated frequency-dependent loss mechanisms present. The first part of this research addresses the need for a scalable, predictive model for obtaining the frequency domain behavior of spiral inductors on lossy silicon substrates. The technique is based on the Partial Element Equivalent Circuit (PEEC) method and is a flexible approach to modelling spiral inductors. The basic PEEC technique is also enhanced to efficiently include the frequency dependent eddy-currents in the lossy substrate through a new complex-image method. This enhanced PEEC approach includes all of the major non-ideal effects including the conductor-skin and proximity effects, as well as the substrate-skin effect. The approach is applied to octagonal spiral inductors and comparisons with measurements are presented. To complement the scalable enhanced-PEEC model, a new wide-band compact equivalent circuit model is presented which is suitable for time-domain simulations. This model achieves wide-band accuracy through the use of "transformer-loops" to model losses caused by the magnetic field. A fast extraction technique based on a least squares fitting procedure is also described. Results are presented for a transformer-loop compact model extracted from measurements. The combination of an accurate scalable model and a wide-band compact equivalent-circuit model provides a complete modelling methodology for spiral inductors on lossy silicon. / Graduation date: 2003

Thesis (Ph. D.)--Ohio State University, 2006. / Full text release at OhioLINK's ETD Center delayed at author's request

No description available.

Thesis (M.S.)--Oregon State University, 2009. / Printout. Includes bibliographical references (leaves 91-97). Also available on the World Wide Web.

Thesis (M.S.)--Oregon State University, 2009. / Printout. Includes bibliographical references (leaves 47-49). Also available on the World Wide Web.

Dissertation (Ph.D.)--Auburn University, 2006. / Abstract. Vita. Includes bibliographic references (p.136-139).

Thesis (Ph.D.)--Rochester Institute of Technology, 2005. / Typescript. Includes bibliographical references (leaves 136-139).

Spiral inductors are a key component of mixed-signal and analog integrated circuits (IC's). Such circuits are often fabricated using silicon-based technology, owing to the inherent low-cost and high volume production aspects. However, semiconducting substrate materials such as silicon can have adverse effects on spiral inductor performance due to the lossy nature of the material. Since the operating requirements of many high performance IC's demand reactive components that have high Quality Factor's (Q's), and are thus low loss devices, the need for accurate modeling of such structures over lossy substrate media is key to successful circuit design. The Q's of commonly available off-chip inductors are in the range of 50- 100 for frequencies ranging up to a few gigahertz. Since off-chip inductors must be connected through package pins, solder bumps, etc., which all contribute additional loss and thus lower the apparent Q of an external device, the typical on-chip Q requirement for a given RFIC design is generally lower than that for an off-chip spiral solution. However, a spiral inductor that was designed and fabricated originally in a low loss technology such as thin-film alumina may have substantially worse performance in regard to Q if it is used in a silicon-based technology, owing to the conductive substrate. For this reason, it is imperative that semiconducting substrate effects be accurately accounted for by any modeling effort for monolithic spirals in RFICs. This thesis presents a complete modeling solution for both single and multi-level spiral inductors over lossy silicon substrates, along with design considerations and methods for mitigation of the undesirable performance effects of semiconducting substrates. The modeling solution is based on Spectral Domain Approach (SDA) solutions for frequency dependent complex capacitive (i.e. both capacitance and conductance) parasitic elements combined with a quasi-magnetostatic field solution for calculation of the frequency dependent complex inductive (i.e. both inductance and resistance) terms. The effects of geometry and process variations are considered as well as the incorporation of Patterned Ground Shields (PGS) for the purpose of Q enhancement. Proposals for future extensions of this work are discussed in the concluding chapter. / Graduation date: 2006