CdS/CdTe solar cell performance and reproducibility can be improved by integrating a ZTO buffer layer, which interdiffuses into the CdS layer during device fabrication. Reducing the thickness of CdS layer improves the QE in the blue spectral region without affecting the device performance. This buffer layer is expected to prevent the formation of localized TCO/CdTe junction during high temperature processing.The CdS/CdTe Solar Cell was modified by introducing ZTO as a buffer layer between the window layer (CdS) and the absorber layer (CdTe). Studies were performed on different varying ZTO processing parameters like (a) Zn/Sn atomic ratios during sputtering process, (b) ZTO thickness, (c) ZTO heat treatment temperature, and (d) ZTO heat treatment ambient.