In this work I have evaluated a measurement method for glucose concentration in aqueous solutions and developed a system that performs the measurement and presents the result on a computer screen. The method is based on the dielectric properties of glucose and the varying phase shift of a microwave resonance cavity. The phase shift is measured using homodyne detection. The measurement system can measure the concentration of glucose in aqueous solutions in real time. I have tested concentrations from 0 to 3000 mg/dl. / I detta arbete har jag undersökt en metod för att mäta glukoskoncentration och med denna metod konstruerat en mätutrustning som visar glukoskoncentrationen för ett prov på en datorskärm. Mätningen baseras på radiovågor och permittiviteten för glukoslösningar. För att mäta permittiviteten används en mikrovågsresonanskavitet och homodyn detektering. Det gör det möjligt att mäta även mycket små prov, och detta utan att vara i direkt kontakt med provet. Mätsystemet kan mäta koncentrationen på vattenlösningar av glukos i realtid. Jag har testat systemet på koncentrationer mellan 0 och 3000 mg/dl.

In this work, homojunction interfacial workfunction internal photoemission (HIWIP) detectors based on GaAs, and heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors based mainly on the Gallium Arsenide/Aluminum Gallium Arsenide material system are presented. Design principles of HIWIP and HEIWIP detectors, such as free carrier absorption, photocarrier generation, photoemission, and responsivity, are discussed in detail. Results of p-type HIWIPs based on GaAs material are presented. Homojunction detectors based on p-type GaAs were found to limit their operating wavelength range. This is mainly due to band depletion arising through carrier transitions from the heavy/light hole bands to the split off band. Designing n-type GaAs HIWIP detectors is difficult as it is strenuous to control their workfunction. Heterojunction detectors based on Gallium Arsenide/Aluminum Gallium Arsenide material system will allow tuning their threshold wavelength by adjusting the alloy composition of the Aluminum Gallium Arsenide/Gallium Arsenide barrier, while keeping a fixed doping density in the emitter. The detectors covered in this work operate from 1 to 128 micron (300 to 2.3 THz). Enhancement of detector response using resonance cavity architecture is demonstrated. Threshold wavelength extension of HEIWIPs by varying the Al composition of the barrier was investigated. The threshold limit of approximately 3.3 THz (92 micron), due to a practical Al fraction limit of approximately 0.005, can be overcome by replacing GaAs emitters in Gallium Arsenide/Aluminum Gallium Arsenide HEIWIPs with Aluminum Gallium Arsenide/Gallium Arsenide emitters. As the initial step, terahertz absorption for 1 micron-thick Be-doped Aluminum Gallium Arsenide epilayers (with different Al fraction and doping density) grown on GaAs substrates was measured. The absorption probability of the epilayers was derived from these absorption measurements. Based on the terahertz absorption results, an Aluminum Gallium Arsenide/Gallium Arsenide HEIWIP detector was designed and the extension of threshold frequency (f0) to 2.3 THz was successfully demonstrated. In a different study, switching in Gallium Arsenide/Aluminum Gallium Arsenide heterostructures from a tunneling dominated low conductance branch to a thermal emission dominated high conductance branch was investigated. This bistability leads to neuron-like voltage pulses observed in some heterostructure devices. The bias field that initiates the switching was determined from an iterative method that uses feedback information, such as carrier drift velocity and electron temperature, from hot carrier transport. The bias voltage needed to switch the device was found to decrease with the increasing device temperature.

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal.