Optical transition energies are widely used for providing experimental insight into the electronic band structure of single-wall carbon nanotubes (SWCNTs). While the first and second optical transitions in semiconducting carbon nanotubes have already been heavily studied, due to experimental difficulties in accessing the relevant excitation energy region, little is known about higher lying transitions. Here, I present measurements of the third and fourth optical transitions of small-diameter (0.7-1.2 nm), semiconducting single-wall carbon nanotubes via resonant Raman spectroscopy in the visible deep blue region (415-465 nm) and photoluminescence excitation spectroscopy in the ultraviolet and visible blue optical regions (280-488 nm). Diameter-dependent Raman radial breathing mode features, as well as resonant energy excitation maxima determined by Raman and photoluminescence measurements, are assigned to specific (n,m) nanotube species. The Raman intensity within a given 2n+m branch is found to increase with decreasing chiral angle, consistent with similar measurements for lower order optical states. Additionally, increased excitation line widths and weaker Raman intensities are observed as higher lying transitions are accessed for a given nanotube, in agreement with previous Raman measurements. Chiefly, a scaling law analysis that removes the chiral-angle-dependent contribution to the optical transition energy indicates that the third and fourth transition energies exhibit a significant deviation from the energy trend line observed for the first and second optical transitions, when the transition energies are plotted as a function of nanotube diameter. This deviation can be understood in the context of a change in the competition between exchange and excitonic correction terms. Furthermore, for semiconducting SWCNTs with diameters less than 0.9 nm, an additional deviation is observed that is interpreted as the first observation of crossing-over of the third and fourth transition energy trend lines for a given 2n+m branch and a chirality dependence in the many-body excitonic effects that becomes significant at high nanotube curvatures.

The armchair variety of single-wall carbon nanotubes (SWCNTs) is the only nanotube species that behaves as a metal with no electronic band gap and massless carriers, making them ideally suited to probe fundamental questions of many-body physics of one-dimensional conductors as well as to serve in applications such as high-current power transmission cables. However, current methods of nanotube synthesis produce bulk material comprising of a mixture of nanotube lengths, diameters, wrapping angles, and electronic types due to the inability to control the growth process at the nanometer level. As a result, measurements of as-grown SWCNTs produce a superposition of electrical and optical responses from multiple SWCNT species. This thesis demonstrates production of aqueous suspensions composed almost entirely of armchair SWCNTs using a post-synthesis separation method employing density gradient ultracentrifugation (DGU) to separate different SWCNT types based on their mass density and surfactant-specific interactions. Resonant Raman spectroscopy determines the relative abundances of each nanotube species, before and after DGU, by measuring the integrated intensity of the radial breathing mode, the diameter-dependent radial vibration of the SWCNT perpendicular to its main axis, and quantifies the degree of enrichment of bulk nanotube samples to exclusively armchair tubes. Raman spectroscopy of armchair-enriched samples of the G-band mode, which is composed of longitudinal (G-) and circumferential (G+) vibrations oscillating parallel and perpendicular to the tube axis, shows that the G- peak, long-held to be an indicator for the presence of metallic SWCNTs, appears only when electronic resonance with narrow-gap semiconducting SWCNTs occurs and shows only the G+ component in spectra containing only armchair species. Finally, by combining optical absorption measurements with nanotube composition as determined earlier via Raman scattering, peak fitting of absorption spectra indicates that interband transitions of armchair SWCNTs are strongly excitonic as shown by the highly symmetric peak lineshapes, a property normally attributed to semiconductors. Such lineshapes allow classification of armchair SWCNTs as a unique hybrid class of optical nanomaterial. Combining absorption and Raman scattering measurements establishes a distinct optical signature that describes the fundamental optical processes within armchair SWCNTs and lays the foundation for future studies of many-body photophysics and electrical applications.

A capacidade de complexos oxindolimínicos de cobre (II) de inibir células cancerígenas HeLa foi determinada no Laboratório de Bioinorgânica, Catálise e Farmacologia (IQ-USP), coordenado pela Profa. Dra. Ana Maria da Costa Ferreira. Nesta dissertação um dos estudos foi obter o imageamento SERS desses compostos no interior de células HeLa vivas com o objetivo de identificar o alvo intracelular desses complexos. Devido a intensificação SERS desses complexos ser baixa e causarem a agregação das nanopartículas de ouro (AuNP) foi necessária a utilização de um marcador Raman (MR) nestes estudos, sendo escolhido o composto DTNB (Ácido 5,5\'-ditiobis-(2-nitrobenzóico)). Portanto a sonda SERS desse estudo consiste de AuNP esféricas juntamente com o MR e os complexos de cobre (AuNP/MR/Cu(isatp) ou Cu(nisatp)). No imageamento das células HeLa foram utilizadas duas radiações excitantes: 532 nm, onde não ocorre intensificação SERS originando uma imagem Raman dos constituintes celulares em maior quantidade e 785 nm, que possibilita o monitoramento dos sistemas AuNP/MR/Cu(isatp) ou Cu(nisatp) no interior das células. Para a análise dos espectros desse estudo (cerca de 2000 espectros para cada imageamento) a linha base foi corrigida por WLS (Weighted Least Squares) para os espectros SERS e por EMSC (Extended Multiplicative Scatter Correction) para os espectros Raman, além de ser feito alisamento utilizando um filtro Savitzky-Golay. Os espectros Raman foram submetidos à uma análise multivariada MCR-ALS (Multivariate Curve Resolution - Asymmetric Least Squares) para se obter as imagens de diferentes componentes celulares e uma análise univariada dos espectros SERS, baseada na banda do MR, possibilitando obter as imagens dos sistemas AuNP/MR/Cu(isatp) e AuNP/MR/Cu(nisatp). O imageamento SERS e Raman das células HeLa mostraram que os complexos têm a capacidade de penetrar nas células, juntamente com as nanopartículas de ouro, e causar dano ao núcleo celular, sem a entrada de água na célula, característica não observada ao tratar as células com outros sistemas sem a presença dos complexos. Outro estudo realizado nesta dissertação foi a caracterização do complexo de superfície formado entre a 5-nitroisatina em nanopartículas de prata, através da espectroscopia SERS e Raman ressonante. Foi observado que o complexo de superfície apresenta uma grande deslocalização eletrônica frente às espécies moleculares estudadas para fins comparativos. Essa deslocalização gera um cromóforo distinto no complexo de superfície que possui uma transição eletrônica na região do verde do espectro visível, enquanto que as espécies moleculares apresentam transições na região do azul e ultravioleta. / The inhibition of cancer HeLa cells by oxindoliminic copper (II) complexes was determined in the Bioinorganic, Catalysis and Pharmacology Laboratory (IQ-USP), coordinated by Profa. Dra. Ana Maria da Costa Ferreira. In this work one of the studies was to identify the intracellular targets of these complexes by SERS imaging of live HeLa cells. Due to the low SERS intensification of these complexes and the aggregation that they cause in the gold nanoparticles (AuNP), it was necessary to use a Raman reporter (MR) in these studies. The reporter chosen was the DTNB (5,5\'-dithiobis-(2-nitrobenzoic acid)). The SERS probe was constituted by spherical AuNP together with the MR and the copper complexes. In the imaging of live HeLa cells two excitation radiations were used: 532 nm, to acquire the normal Raman information of the cells and 785 nm, to acquire the localization of the modified AuNP inside the cells. To analyze the spectra (about 2000 spectra to each imaging) the baseline, for the SERS spectra, was corrected by WLS (Weighted Least Squares) and the EMSC (Extended Multiplicative Scatter Correction) was used to correct the Raman spectra. A Savitzky-Golay filter was used for smoothing. The Raman images of the cellular components were obteined by multivariate analysis MCR-ALS (Multivariate Curve Resolution - Asymmetric Least Squares), and the SERS images were obtained by univariate analysis based on the band of the MR. The SERS and Raman images showed that the complexes are capable of entering the cells together with the AuNP, and cause damage to the nuclei, without the entrance of water into the cell, a characteristic not observed in other studied systems. Another realized study was the characterization of a surface complex formed between 5-nitroisatin and silver nanoparticles (AgNP), using SERS and resonant Raman. The surface complex showed a massive electron delocalization when compared to the molecular species. This electron delocalization in the surface complex generated a new chromophore, not seen in the molecular complex. This chromophore has an electronic transition in the green region of the visible spectrum, while the molecular species transitions occur in higher energies.

Devido à escassez de dados espectroscópicos sobre as interações de aminas aromáticas com SO2 e devido também à importância que complexos de transferência de carga assumem numa série de processos, inclusive biológicos, realizou-se um estudo objetivando a caracterização dessa interação através de várias técnicas espectroscópicas, como a espectroscopia Raman, no Infravermelho, no visível-ultravioleta e de Ressonância Magnética Nuclear. A partir dos dados obtidos nesses estudos concluímos que ocorre transferência de carga da amina para o SO2 ; essa transferência ocorre a partir do orbital ocupado de maior energia da amina , localizado principalmente no átomo de nitrogênio, para o orbital vago de mais baixa -energia do SO2 (π * ) localizado no a-tomo de enxofre. Os espectros vibracionais mostram que não é possível correlacionar as frequências de estiramento do SO2 complexado com o pKb (ou potencial de ionização) da base e sugerem que fatores estéricos podem ser importantes, influenciando o recobrimento dos orbitais do doador e do aceptor. No caso particular da ANI.SO2 , alterações na região de estiramento N-H do espectro no infravermelho , indicam que muito provavelmente ocorre a formação de ligações de hidrogênio entre a amina e o SO2 além da interação através do átomo de nitrogênio. ° comportamento termocrômico dos complexos foi investigado através de espectroscopia Raman à baixa temperatura. As informações preliminares obtidas sugerem que o desaparecimento da côr é devido a uma depopulação dos estados vibracionais excitados, a partir dos quais se efetuam as transições eletrônicas com fatores de Franck-Condon muito favoráveis / The shortage of spectroscopic data on the interactions between amines and SO2, together with the relevance that molecular complexes have in several process, including biological ones, stimulated us to study these systems by Raman, Infrared, Visible-Ultra violet and NMR spectroscopic techniques. From the data obtained, it\'s possible to conclude that there is charge transfer from the HOMO of the amines, which is localized mainly at the nitrogen atom, to the LUMO of SO2, localized at the sulfur atom. The vibrational spectra show that it is impossible to correlate any of the SO2 vibrational bands to the pKb of the donor and suggest that steric hindrance may play an important role in such interations, affecting the overlap of donor and aceptor orbitals; in the case of ANI.SO2 , the band shape in the N-H stretching region led us to conclude that hidrogen bonding between the amine and SO2 occurs, together with the specific interation through the nitrogen atom. The complexes show Pré-Resonance Raman Effect and from its study one concludes that SO2 belongs to the chromophoric group. The thermochromism that the complexes present was investigated by Raman Spectroscopy at low temperature. The informations obtained strongly suggest that the vanishing of its colour may be atributed to a depopulation of an vibrational excited state from which the charge transfer eletronic transition can occur with apreciable Franck-Condon factors.

Devido à escassez de dados espectroscópicos sobre as interações de aminas aromáticas com SO2 e devido também à importância que complexos de transferência de carga assumem numa série de processos, inclusive biológicos, realizou-se um estudo objetivando a caracterização dessa interação através de várias técnicas espectroscópicas, como a espectroscopia Raman, no Infravermelho, no visível-ultravioleta e de Ressonância Magnética Nuclear. A partir dos dados obtidos nesses estudos concluímos que ocorre transferência de carga da amina para o SO2 ; essa transferência ocorre a partir do orbital ocupado de maior energia da amina , localizado principalmente no átomo de nitrogênio, para o orbital vago de mais baixa -energia do SO2 (π * ) localizado no a-tomo de enxofre. Os espectros vibracionais mostram que não é possível correlacionar as frequências de estiramento do SO2 complexado com o pKb (ou potencial de ionização) da base e sugerem que fatores estéricos podem ser importantes, influenciando o recobrimento dos orbitais do doador e do aceptor. No caso particular da ANI.SO2 , alterações na região de estiramento N-H do espectro no infravermelho , indicam que muito provavelmente ocorre a formação de ligações de hidrogênio entre a amina e o SO2 além da interação através do átomo de nitrogênio. ° comportamento termocrômico dos complexos foi investigado através de espectroscopia Raman à baixa temperatura. As informações preliminares obtidas sugerem que o desaparecimento da côr é devido a uma depopulação dos estados vibracionais excitados, a partir dos quais se efetuam as transições eletrônicas com fatores de Franck-Condon muito favoráveis / The shortage of spectroscopic data on the interactions between amines and SO2, together with the relevance that molecular complexes have in several process, including biological ones, stimulated us to study these systems by Raman, Infrared, Visible-Ultra violet and NMR spectroscopic techniques. From the data obtained, it\'s possible to conclude that there is charge transfer from the HOMO of the amines, which is localized mainly at the nitrogen atom, to the LUMO of SO2, localized at the sulfur atom. The vibrational spectra show that it is impossible to correlate any of the SO2 vibrational bands to the pKb of the donor and suggest that steric hindrance may play an important role in such interations, affecting the overlap of donor and aceptor orbitals; in the case of ANI.SO2 , the band shape in the N-H stretching region led us to conclude that hidrogen bonding between the amine and SO2 occurs, together with the specific interation through the nitrogen atom. The complexes show Pré-Resonance Raman Effect and from its study one concludes that SO2 belongs to the chromophoric group. The thermochromism that the complexes present was investigated by Raman Spectroscopy at low temperature. The informations obtained strongly suggest that the vanishing of its colour may be atributed to a depopulation of an vibrational excited state from which the charge transfer eletronic transition can occur with apreciable Franck-Condon factors.

The thesis presents experimental studies of device characteristics and vibrational properties of atomic layer thin graphene and molybdenum disulphide (MoS2). We carried out Raman spectroscopic studies on field effect transistors (FET) fabricated from these materials to investigate the phonons renormalized by carrier doping thus giving quantitative information on electron-phonon coupling. Below, we furnish a synoptic presentation of our work on these systems. Chapter1: Introduction Chapter1, presents a detailed introduction of the systems studied in this the¬sis, namely single layer graphene (SLG), bilayer graphene (BLG) and single layer molybdenum disulphide (MoS2). We have mainly discussed their electronic and vibrational properties in the light of Raman spectroscopy. A review of the Raman studies on graphene layers is presented. Chapter2: Methodology and Experimental Techniques Chapter 2 starts with a description of Raman instrumentation. The steps for isolating graphene and MoS 2 flakes and the subsequent device fabrication procedures involving lithography are discussed in detail. A brief account of the top gated field effect transistor (FET) using solid polymer electrolyte is presented. Chapter3: Band gap opening in bilayer graphene and formation of p-n junction in top gated graphene transistors: Transport and Raman studies In Chapter3 the bilayer graphene (BLG) field effect transistor is fabricated in a dual gate configuration which enables us to control the energy band gap and the Fermi level independently. The gap in bilayer energy spectrum is observed through different values of the resistance maximum in the back gate sweep curves, each taken at a fixed top gate voltage. The gate capacitance of the polymer electrolyte is estimated from the experimental data to be 1.5μF/cm2 . The energy gap opened between the valence and conduction bands using this dual-gated geometry is es¬timated invoking a simple model which takes into account the screening of gate induced charges between the two layers. The presence of the controlled gap in the energy band structure along with the p-n junction creates a new possibility for the bilayer to be used as possible source of terahertz source. The formation of p-n junction along a bilayer graphene (BLG) channel is achieved in a electrolytically top gated BLG FET, where the drain-source voltage VDS across the channel is continuously varied at a fixed top gate voltage VT(VT>0). Three cases may arise as VDS is varied keeping VT fixed: (i) for VT-VDS0, the entire channel is doped with electron, (ii) for VT-VDS= 0, the drain end becomes depleted of carriers and kink in the IDS vs VDS curve appears, (iii) for VT-VDS « 0, carrier reversal takes place at the drain end, accumulation of holes starts taking place at the drain end while the source side is still doped with electrton. The verification of the spatial variation of carrier concentration in a similar top gated single layer graphene (SLG) FET device is done using spatially resolved Ra¬man spectroscopy. The signature 2D Raman band in a single layer graphene shows opposite trend when doped: 2D peak position decreases for electron doping while it increases for hole doping. On the other hand, the G mode response being symmetric in doping can act as a read-out for the carrier concentration. We monitor the peak position of the G and the 2D bands at different locations along the SLG FET channel. For a fixed top gate voltage V T , both G and the 2D band frequencies vary along the channel. For a positive VTsuch that VT-VDS= 0, the peak frequencies ωGand ω2DωG/2D occur at the undoped frequency (ωG/2D)n=0 near the drain end while the source end corresponds to non-zero concentration. When VT-VDS<0, Raman spectra from hole doped regions (drain end) in the channels show an blue-shift in ω2Dwhile from the electron doped regions (near source) ω2Dis softened. Chapter4: Mixing Of Mode Symmetries In Top Gated Bilayer And Multilayer Graphene Field Effect Devices In Chapter4, the effect of gating on a bilayer graphene is captured by using Raman spectroscopy which shows a mixing of different optical modes belonging to differ¬ent symmetries. The zone-center G phonon mode splits into a low frequency (Glow) and a high frequency (Ghigh) mode and the two modes show different dependence on doping. The two G bands show different trends with doping, implying different electron-phonon coupling. The frequency separation between the two sub-bands in¬creases with increased doping. The mode with higher frequency, termed as Ghigh, shows stiffening as we increase the doping whereas the other mode, Glow, shows softening for low electron doping and then hardening at higher doping. The mode splitting is explained in terms of mixing of zone-center in-plane optical phonons rep¬resenting in-phase and out-of-phase inter-layer atomic motions. The experimental results are combined with the theoretical predictions made using density functional theory by Gava et al.[PRB 80, 155422 (2009)]. Similar G band splitting is observed in the Raman spectra from multilayer graphene showing influence of stacking on the symmetry properties. Chapter5: Anomalous dispersion of D and 2D modes in graphene and doping dependence of 2D ′and 2D+G bands Chapter 5 consists of two parts: Part A titled “Doping dependent anomalous dispersion of D and 2D modes in graphene” describes the tunability of electron-phonon coupling (EPC) associated with the highest optical phonon branch (K-A) around the zone corner K using a top gated single layer graphene field effect transistor. Raman D and 2D modes originate from this branch and are dispersive with laser excitation energy. Since the EPC is proportional to the slope of the phonon branch, doping dependence of the D and 2D modes is carried out for different laser energies. The dispersion of the D mode decreases for both the electron and the hole doping, in agreement with the recent theory of Attaccalite et. al [Nano Letters, 10, 1172 (2010)]. In order to observe D-band in the SLG samples, low energy argon ion bombardment was carried out. The D peak positions for variable carrier concentration using top-gated FET geometry are determined for three laser energies, 1.96 eV, 2.41 eV and 2.54 eV. However, the dispersion of the 2D band as a function of doping shows an opposite trend. This most curious result is quantitatively explained us¬ing a fifth order process rather than the usual fourth order double resonant process usually considered for both the D and 2D modes. Part B titled “Raman spectral features of second order 2D’ and 2D+G modes in doped graphene transistor” deals with doping dependence of 2D’ and 2D+G bands in single layer graphene transistor. The phonon frequency blue shifts for the hole doping and whereas it red shifts for electron doping, similar to the behaviour of the 2D band. The linewidth of the 2D+G combination mode too follows the 2D trend increasing with doping while that of 2D’ mode remains invariant. Chapter6: New Raman modes in graphene layers using 2eV light Unique resonant Raman modes are identified at 1530 cm−1 and 1445 cm−1 in single, bi, tri and few layers graphene samples using 1.96 eV (633 nm) laser excitation energy (EL). These modes are absent in Raman spectra using 2.41 eV excitation energy. In addition, the defect-induced D band which is observed only from the edges of a pristine graphene sample, is observed from the entire sample region using E L = 1.96 eV. Raman images with peak frequencies centered at 1530 cm−1, 1445 cm−1 and D band are recorded to show their correlations. With 1.96 eV, we also observe a very clear splitting of the D mode with a separation of ∼32 cm−1, recently predicted in the context of armchair graphene nanoribbons due to trigonal warping effect for phonon dispersion. All these findings suggest a resonance condition at ∼2eVdue to homo-lumo gap of a defect in graphene energy band structure. Chapter7: Single and few layer MoS2: Resonant Raman and Phonon Renormalization Chapter 7 is divided into two parts. In Part A “Layer dependent Resonant Raman scattering of a few layer MoS2”, we discuss resonant Raman scattering from single, bi, four and seven layers MoS2. As bulk crystal of MoS2is thinned down to a few atomic layers, the indirect gap widens turning into a direct gap semiconductor with a band gap of 1.96 eV in its monolayer form. We perform Raman study from MoS 2 layers employing 1.96 eV laser excitation in order to achieve resonance condition. The prominent Raman modes for MoS 2 include first order E12g mode at ∼383 cm−1 and the A1gmode at ∼408 cm−1 which are observed under both non resonant and resonant conditions. A1gphonon involves the sulphur atomic vibration in opposite direction along the c axis (perpendicular to the basal plane) whereas for E12g mode, displacement of Mo and sulphur atoms are in the basal plane. With decreasing layer thickness, these two modes shifts in opposite direction, the E12g mode shows a blue shift of ∼2cm−1 while the A1gis red shifted by ∼4cm−1 . Under resonant condi¬tion, apart from E12g and A1gmodes, several new Raman spectral features, which are completely absent in bulk, are observed in single, bi and few layer spectra pointing out the importance of Raman characterization. New Raman mode attributed to the longitudinal acoustic mode belonging to the phonon branch at M along the Γ-M direction of the Brillouin zone is seen at ∼230 cm−1 for bi, four and seven layers. The most intense region of the spectrum around 460 cm−1 is characterized by layer dependent frequencies and spectral intensities with the band near 460 cm−1 becoming asymmetric as the sample thickness is increased. In the high frequency region between 510-630 cm−1, new bands are seen for bi, four and seven layers. In Part B titled “Symmetry-dependent phonon renormalization in monolayer MoS2transistor”, we show that in monolayer MoS2the two Raman-active phonons, A1g and E21 g, behave very differently as a function of doping induced by the top gate voltage in FET geometry. The FET achieves an on-off ratio of ∼ 105 for electron doping. We show that while E12g phonon is essentially unaffected, the A1gphonon is strongly influenced by the level of doping. We quantitatively understand our experimental results through the use of first-principles calculations to determine frequencies and electron-phonon coupling for both the phonons as a function of carrier concentration. We present symmetry arguments to explain why only A1g mode is renormalized significantly by doping. Our results bring out a quantitative under¬standing of electron-phonon interaction in single layer MoS2.

Croissance catalytique et étude de nanotubes de carbone multi-feuillets produits en masse et de nanotubes de carbone ultra-long individuels à quelques feuillets Résumé: Ce travail expérimental traite de la croissance catalytique à partir d'une phase vapeur (CCVD) de nanotubes de carbone multi-feuillets (MWCNT) et de nanotubes de carbone (CNT) ultralongs ainsi que de l'étude de leurs propriétés physiques. Dans la première partie du manuscrit est décrite l'optimisation des paramètres pour la croissance CCVD de MWNT en masse et à faible coût. Avec l'acétylène comme source de carbone, Fe(NO3)3.9H2O comme précurseur de catalyseur et CaCO3 comme support, nous rapportons les conditions optimales pour la production de 525 g de MWCNT par jour à un coût estimé de 0.6$/g. La purification des MWCNT ainsi produits par un traitement à l'oxygène ou au dioxyde de carbone est également présentée. La seconde partie est consacrée à la synthèse de CNT ultralongs. L'influence des paramètres de synthèse est étudiée et, à partir de ces observations, les mécanismes de croissance possibles sont discutés. La dernière partie de la thèse est dédiée à la fabrication et à l'étude des propriétés physiques de nanotubes individuels ultralongs. Sur la base du savoir-faire développé précédemment, nous avons réalisé des CNT ultralongs alignés, des jonctions de CNT (suspendus ou supportés) ainsi que des CNT suspendus au-dessus de différents supports. Les propriétés électroniques et de transport des CNT individuels ultralongs sur substrat de silicium ont été étudiées par microscopie à force atomique, spectroscopie Raman et mesures de transport. Enfin, les modes de phonons actifs en Raman sont étudiés par des expériences combinant microscopie électronique à transmission, diffraction électronique et spectroscopie Raman.Mots clés: Nanotubes de carbone multi-feuillets, nanotubes de carbone ultralongs, croissance catalytique à partir d'une phase vapeur, mécanisme de croissance, lithographie, spectroscopie Raman de résonance, transport électronique. / Catalytic growth and study of mass-produced multi-walled carbon nanotubes and ultralong individual few-walled carbon nanotubesAbstract: This experimental work deals with the growth of multi-walled carbon nanotubes (MWCNTs) and ultralong carbon nanotubes (CNTs) by catalytic chemical vapor deposition (CCVD), and the study of their physical properties. In the first part of the manuscript is described the parameter optimization of the CCVD growth of MWCNTs for a large-scale production at low cost. By using acetylene as a carbon source, Fe(NO3)3.9H2O as a precursor catalyst and CaCO3 as a catalyst support, we report on optimized growth conditions allowing the production of 525 g of MWCNTs per day at an estimated cost of 0.6 $ per gramme. The purification of the as-grown MWCNTs by oxygen or carbon dioxide treatments is also presented. In the second part is presented the synthesis of ultralong individual CNTs. The influence of the growth parameters is investigated and based on the experimental observations, the possible growth mechanisms are discussed. Finally, the last part of the thesis is dedicated to the preparation and to the study of the physical properties of ultralong individual carbon nanotubes. From the know-how developed in the previous part, we prepared well-aligned ultralong CNTs, cross junction of CNTs (on a substrate or suspended) and suspended CNTs over different supports. Electronic and electron transport properties of the individual ultralong CNTs on silicon substrate are then studied by atomic force microscopy, Raman spectroscopy and transport measurements. Finally, the Raman-active phonons of suspended individual CNTs were investigated in combined experiments by transmission electron microscopy, electron diffraction and Raman spectroscopy. Keywords: Multi-walled carbon nanotubes, ultralong carbon nanotubes, catalytic chemical vapor deposition, growth mechanism, lithography, resonant Raman spectroscopy, electronic transport.

Dans cette thèse, la spectroscopie Raman résonante UV (SRRUV) est appliquée pour la première fois à l'étude ‘in situ’ de matériaux carbonés à très haute température (> 2000 K) ou à haute pression (< 1 GPa).La thèse est constituée de trois parties. La première aborde notre travail de caractérisation en SRRUV (1) de films semi conducteurs de diamants ultra-nano-cristalins, (2) des kérogènes issues de météorites chondritiques et de charbons, et (3) des tholins, échantillons de carbone-hydrogène-azote, synthétisés comme analogues de l'atmosphère de Titan.L’intérêt pour ces phases du carbone en planétologie et en science des matériaux nous a poussé à mettre en œuvre leur étude ‘in situ’ en SRRUV. La seconde partie de la thèse est consacrée au développement d'une platine chauffante, grâce à laquelle les spectres Raman du graphite sous sa forme pyrolitique et HOPG ont été mesurés jusqu'à 2700 K. Ces données valident les modèles anharmoniques théoriques d’interaction électron-phonon et phonon-phonon. Le spectre Raman du graphite a été étalonné en fonction de la température et devient un « thermomètre » à très haute température.Dans la troisième partie de cette thèse, une presse à enclumes opposées a été modifiée pour suivre en SRRUV les changements structuraux de cristaux moléculaires très luminescents. Les vibrations intramoléculaires du cristal de pérylène sont étudiées sous pression par SRRUV. Ce composé est un cristal formé de molécules organiques polyaromatiques, avec des propriétés de semi-conducteur. Les effets de la pression sur certains modes de vibrations sont non linéaires et mettent en évidence des changement structuraux et de planéité de la molécule. / I applied UV resonant Raman spectroscopy (UVRRS) to an ‘in situ’ study of carbon materials at very hight temperature (> 2000 K) or at high pressure (< 1 GPa).The advantages of UVRRS are presented in the first part of this PHD thesis, and used to investigate details of the composition and structure of disordered carbon materials such as: (1) n-type nanocrystalline films, (2) carbonaceous matter in chondrites and (3) tholins, HCN synthetic samples of Titan 's atmosphere.‘In situ’ Raman studies are limited to 2000 K by the visible black-body emission. I designed a high temperature cell to perform UVRRS above this limit. The second part of the manuscript presents Raman spectra of pyrolitic graphite and HOPG up to 2700 K. This data are consistent with anharmonic models up to 900 K, and show the coupling effects of electron-phonon and phonon-phonon. The last one dominates the anharmonicity above 1000 K. The Raman spectra was calibrated as a function of temperature and became a “thermometer” up to 2700 K.For high pressure measurements in the third part, I modified an anvil cell to study by UVRRS, the vibrational changes induced by pressure on very luminescent molecular organic crystals. I present an analysis at 244 nm of resonant Raman modes of perylene crystal under hydrostatic pressure up to 0.8 GPa. Some of them have a non linear feature under pressure, revealing structural and planar modifications of the molecules.