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On-Chip Phase Measurement Design Study in 65nm CMOS TechnologyHaider, Daniyal January 2015 (has links)
Jitter is generally defined as a time deviation of the clock waveform from its desired position. The deviation which occurs can be on the leading or lagging side and it can be bounded (deterministic) or unbounded (random). Jitter is a critical specification in the digital system design. There are various techniques to measure the jitter. The straightforward approach is based on spectrum analyzer or oscilloscope measurements. In this thesis an on-chip jitter measurement technique is investigated and the respective circuit is designed using 65 nm CMOS technology. The work presents the high level model and transistor level model, both implemented using Cadence software. Based on the Vernier concept the circuit is composed of an edge detector, two oscillators, and a phase detector followed by a binary counter, which provides the measurement result. The designed circuit attains resolution of 10ps and can operate in the range of 100 - 500 MHz Compared to other measurement techniques this design features low power consumption and low chip area overhead that is essential for built-in self-test (BIST) applications.
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Time to Digital Converter used in ALL digital PLLYao, Chen January 2011 (has links)
This thesis proposes and demonstrates Time to Digital Converters (TDC) with high resolution realized in 65-nm digital CMOS. It is used as a phase detector in all digital PLL working with 5GHz DCO and 20MHz reference input for radio transmitters. Two kinds of high resolution TDC are designed on schematic level including Vernier TDC and parallel TDC. The Sensed Amplifier Flip Flop (SAFF) is implemented with less than 1ps sampling window to avoid metastability. The current starved delay elements are adopted in the TDC and the conversion resolution is equal to the difference of the delay time from these delay elements. Furthermore, the parallel TDC is realized on layout and finally achieves the resolution of 3ps meanwhile it consumes average power 442μW with 1.2V power supply. Measured integral nonlinearity and differential nonlinearity are 0.5LSB and 0.33LSB respectively.
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